P. Cova

ORCID: 0000-0003-0040-098X
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About
Contact & Profiles
Research Areas
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advanced DC-DC Converters
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Quantum Structures and Devices
  • Electromagnetic Compatibility and Noise Suppression
  • Advanced Battery Technologies Research
  • Multilevel Inverters and Converters
  • Electrostatic Discharge in Electronics
  • Semiconductor materials and interfaces
  • Microgrid Control and Optimization
  • Particle Detector Development and Performance
  • Integrated Circuits and Semiconductor Failure Analysis
  • Heat Transfer and Optimization
  • Induction Heating and Inverter Technology
  • Radiation Effects in Electronics
  • Dark Matter and Cosmic Phenomena
  • Photovoltaic System Optimization Techniques
  • Neutrino Physics Research
  • Radiation Detection and Scintillator Technologies
  • Astrophysics and Cosmic Phenomena
  • Electronic Packaging and Soldering Technologies
  • Superconducting Materials and Applications
  • 3D IC and TSV technologies
  • Particle physics theoretical and experimental studies

University of Parma
2016-2025

Istituto Nazionale di Fisica Nucleare, Sezione di Milano
2021-2024

Istituto Nazionale di Fisica Nucleare, Sezione di Pavia
2011-2015

Istituto Nazionale di Fisica Nucleare
2015

Istituto Nazionale di Fisica Nucleare, Sezione di Roma I
2015

Kiel University
2014

Universidad de Oriente
1990-2005

IMEC
2005

KU Leuven
2005

General Tire (United States)
1995

Currently, the electrification of transport networks is one initiatives being performed to reduce greenhouse gas emissions. Despite rapid advancement power electronic systems for electrified transportation systems, their integration into AC grid generates a variety quality issues in electrical distribution system. Among possible solutions this challenge inclusion continuous storage which can be located either onboard or offboard. The development energy devices has enabled creation numerous...

10.3390/batteries10030088 article EN cc-by Batteries 2024-03-02

Ocean waves are a huge largely unexploited energy resource, and the potential for extracting from is great. Research in this area driven by need to meet renewable-energy targets, but it relatively immature compared other technologies. This review introduces some device types that represent state of art oscillating water column technology, kind wave converter (WEC). Unlike works literature, typically limited specific aspects WECs, paper, system-wide perspective will be pursued, sea grid connection.

10.1109/tia.2015.2490629 article EN IEEE Transactions on Industry Applications 2015-01-01

This paper presents a comparison of conventional single-phase water/glycol liquid and innovative two-phase cooling technology for thermal management high-power electronics automotive insulated-gate bipolar transistor modules during full drive cycle. The proposed system is built using air conditioning components (a condenser, an expansion valve, compressor, vapor lines) cold plate as used cooling; thus, the design does not require development new its implementation. Three-dimensional...

10.1109/tpel.2018.2862943 article EN IEEE Transactions on Power Electronics 2018-08-03

A study is presented aimed at describing phenomena involved in Single Event Burnout induced by heavy ion irradiation SiC Schottky diodes. On the basis of experimental data obtained for <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">79</sup> Br different energies, electro-thermal FEM used to demonstrate that failure caused a strong local increase semiconductor temperature. With respect previous studies temperature dependent thermal material...

10.1109/tns.2014.2387014 article EN IEEE Transactions on Nuclear Science 2015-02-01

Environmental issues and the global need to extend sustainable access electricity have fostered a huge amount of research in distributed generation by renewables. The challenges posed widespread deployment renewables, such as intermittent power generation, low inertia, for energy storage, etc., call development smart grids serving specific local areas or buildings, referred microgrids nanogrids, respectively. This has led last decades proposal actual implementation wide variety system...

10.3390/su15032759 article EN Sustainability 2023-02-03

A new formalism is reported for the analysis of current–voltage (I–V) characteristics a tunnel metal-insulator-semiconductor (MIS) device, which considers bias dependent distribution interface states and barrier lowering due to image force. Our theoretical expression I–V general in sense that it applicable even under conditions when both thermionic emission diffusion mechanisms current transport compete with each other. The method ideal epitaxial materials devices where carrier density not...

10.1063/1.366386 article EN Journal of Applied Physics 1997-11-15

In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electrons in pseudomorphic AlGaAs-InGaAs-GaAs HEMTs (PHEMTs). Experiments performed on passivated commercial PHEMTs that electron stress cycles induce a large and permanent increase voltage. Three-terminal two-terminal conditions are compared, former producing much larger flowing channel. Experimental results indicate build-up negative charge region between gate drain is responsible walkout, local...

10.1109/16.485535 article EN IEEE Transactions on Electron Devices 1996-04-01

A tetrahedral model is presented to explain the bonding properties of nonstoichiometric amorphous silicon oxynitride (a-SiOxNy) alloys, grown under highly nonequilibrium conditions, whose structures obey neither random nor mixture model. Based on our approach, a numerical procedure proposed obtain relative atomic percentages each component structural phase from deconvolution high-resolution x-ray photoelectron spectroscopy (XPS) spectra in Si 2p3∕2 region. The then used study a-SiOxNy films...

10.1063/1.1881774 article EN Journal of Applied Physics 2005-03-25

10.1016/s0026-2714(98)00081-x article EN Microelectronics Reliability 1998-06-01

This paper reports on hot electron (HE) degradation of 0.25-/spl mu/m Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.2/Ga/sub 0.8/As/GaAs PHEMT's by showing the effects stress both dc and rf characteristics. The changes behavior after turn out to be strongly correlated. Both can attributed a decrease threshold voltage yielding different device gain depending bias point chosen for operation circuit adopted: fixed current scheme will minimize induced stress. work also presents study dependence condition.

10.1109/16.658668 article EN IEEE Transactions on Electron Devices 1998-02-01

An innovative modeling methodology for the simulation of electrothermal interaction in power devices, based on neural networks (NNs), is shown. The suitability NNs complicated nonlinear, temperature dependent characteristic that electronics devices feature proposed particularly suited to be implemented electrical simulators. approach can divided two parallel steps: first, are used describe complex, highly nonlinear considered device; and second, a RC-based thermal model generated, with...

10.1109/tpel.2018.2863186 article EN IEEE Transactions on Power Electronics 2018-08-03

A new degradation mechanism of PM-HEMT's subsequent to hot electron stress tests or high temperature storage is presented. noticeable increase in drain-to-source current, I/sub DS/, observed after the tests. We show that this DS/ variation slowly recoverable and correlated with presence deep levels device. Stress cause a trapped charge. Trapping holes created by impact-ionization and/or thermally stimulated detrapping induce net negative charge, leading decrease threshold voltage, V/sub T/...

10.1109/55.491839 article EN IEEE Electron Device Letters 1996-05-01

We establish the role of oxygen atoms on structural, chemical, and mechanical properties SiOXNY films grown Si InP substrates by electron–cyclotron resonance chemical-vapor deposition (ECR CVD) using a diluted SiH4 N2 mixture in Ar, under controlled conditions. The chemical ECR-CVD SiNX depend contamination even when this element is present low concentrations. compressive stress deposited with (and constant) content (less than 12%) shown to be qualitative agreement model repulsive Coulomb...

10.1063/1.1483902 article EN Journal of Applied Physics 2002-07-01

The New Small Wheel (NSW) is an upgrade for the ATLAS detector to provide enhanced triggering and reconstruction of muons in forward region. large LV power demands NSW necessitate a point-of-load architecture with on-detector conversion. radiation load magnetic field this environment, while significant, are nevertheless still range where commercial-off-the-shelf devices may suffice.

10.1088/1748-0221/10/01/c01009 article EN Journal of Instrumentation 2015-01-12
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