The drift velocity of electrons and holes in silicon has been measured a large range the electric fields (from 3 . 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> to 6 xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> V/cm) at temperatures up 430 K. experimental data have fitted with simple formula for interest. mean square deviation was all cases less than 3.8 percent. A more general also derived which allows obtain by extrapolation...

Experimental results for electrons obtained with the time-of-flight technique are presented temperatures between 8 and 300\ifmmode^\circ\else\textdegree\fi{}K fields ranging 1.5 5 \ifmmode\times\else\texttimes\fi{} ${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1}$ oriented along $〈111〉$, $〈110〉$, $〈100〉$ crystallographic directions. At 8\ifmmode^\circ\else\textdegree\fi{}K dependence of transit time upon sample thickness has allowed a measurement valley repopulation when electric field is...

Drain current dispersion effects are investigated in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements. Gate- drain-lag characterized time constants the order 10/sup -5/-10/sup -4/ s cause between dc pulsed output characteristics when gate or drain voltage pulsed. An activation energy 0.3 eV is extracted from temperature-dependent gate-lag We show that two-dimensional numerical device simulations accounting only for polarization charges donor-like traps at ungated...

Experimental results for electron drift velocity and diffusivity in germanium, obtained with the time-of-flight technique hyperpure material, are presented temperatures between 8 240 K fields 1 ${10}^{4}$ V/cm oriented along $〈111〉$ $〈100〉$ directions. An anisotropy of diffusion coefficient is found electric field applied directions, latter due to intervalley diffusion. The effect electron-electron interaction properties has also been investigated. Theoretical Monte Carlo calculations have...

Formation rates of Pt2Si and PtSi have been measured using 1.8-MeV 4He+ backscattering spectroscopy. Both silicide layers were grown with t1/2 time dependence, but the formation starts only after all available Pt has reacted for Pt2Si, in disagreement previously reported results. The activation energies common value 1.5±0.1 eV. Auger electron spectroscopy data confirmed deposited film purity show that contaminants contained sputter-deposited layer segregate at Pt2Si/Pt interface. It is...

Charge carrier drift velocities in semiconductor materials suitable for solid state detectors has been reviewed. Si, Ge, CdTe and GaAs are considered. New data HgI2 recently obtained also reported. The cover a large range of temperatures (6-430 K) electric fields up to 50 KV/cm. An anisotropy effect the velocity by applying field parallel different crystallographic axis is discussed case Si Ge.

This paper reports the results of structural analysis proton-exchanged lithium niobate optical waveguides fabricated in Z-, X-, and Y-cut substrates immersed pure benzoic acid. Rutherford backscattering spectrometry, nuclear reactions, secondary ion mass scanning electron microscopy, x-ray diffraction were used to measure atomic composition profiles marked lattice distortion induced by proton exchange process waveguiding layer. H Li concentration measurements indicate an about 70% atoms are...

Piezoresistive properties of thick-film resistors obtained with ink series supplied by different manufacturers have been investigated as a function composition, structure, sheet resistivity, and applied strain between 0 ±1000 μ strain. The sensitivity appears to be strong the nature conductive grains resistivity paste; results suggest dominant role tunneling effect in conduction mechanism sensitivity.

With the time-of-flight technique we have measured longitudinal diffusion coefficient of electrons in silicon at 300 K for fields from Ohmic up to 50 kV/cm. The results been interpreted by means Monte Carlo calculations with a theoretical model which includes many-valley (ellipsoidal and nonparabolic) structure band, acoustic intravalley, several f g intervalley scattering mechanisms.

With the standard plane−parallel configuration of semiconductor detectors, good γ−ray spectra can only be obtained when both electrons and holes are completely collected. We show by calculations (and experiments) that with contacts hemispherical one obtain adequate resolution signal heights nearly full amplitude even type carrier is Experiments CdTe detectors for which μτ product about 103 times confirm these calculations. The adoption thus widens range high−resistivity semiconductors...

Phase formation at temperatures well below the melting point of phases was studied in thin silicon–near-noble-metal films by means 4He+ ion-backscattering spectrometry and x-ray diffractometry SiO2/Si/M film systems, where metal-film thickness larger than that Si film. In initial stage compound both unreacted M layers are present, M2Si phase has been found. At increasing annealing times temperatures, more metal-rich have detected. The Si-Ni thin-film system evolution follows exactly diagram...

The mobilities, trapping times, activation energies, and trap concentration have been measured for both holes electrons in Br Cl-doped CdTe using the time-of-flight technique. Two electron traps 25 50 meV below conduction band two hole 140 350 above valence found. 10 times larger of levels found Br-doped can be explained a model that describes association cadmium vacancies substitutional halogens. physical interpretation μι+ product when are present is discussed this case where mobility...

The drift-velocity characteristic for electrons in CdTe has been measured by the transientcharge technique from 77 to 370 \ifmmode^\circ\else\textdegree\fi{}K and electric fields up 70 kV/cm. Over this temperature range a negative differential mobility was found. peak drift velocity increases 1.25 \ifmmode\times\else\texttimes\fi{} ${10}^{7}$ cm/sec at \ifmmode^\circ\else\textdegree\fi{}C 2.5 is of intrinsic material. threshold field decreases 16kV/cm 11 kV/cm...

In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electrons in pseudomorphic AlGaAs-InGaAs-GaAs HEMTs (PHEMTs). Experiments performed on passivated commercial PHEMTs that electron stress cycles induce a large and permanent increase voltage. Three-terminal two-terminal conditions are compared, former producing much larger flowing channel. Experimental results indicate build-up negative charge region between gate drain is responsible walkout, local...

Impact ionization and light emission phenomena have been studied in AlGaAs/GaAs HEMTs biased at high drain voltages by measuring the gate excess current due to holes generated impact analyzing energy distribution of emitted from devices 1.1-3.1 eV range. The spectra this range can be divided into three regions: (i) around 1.4 is dominated band-to-band recombination between cold electrons GaAs; (ii) 1.5 2.6 photons approximately Maxwellian; (iii) beyond are markedly distorted absorption n/sup...

Commercial power MESFET's with Ti/W/Au gate metallization show a failure mode consisting of decrease in I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dss</inf> and V xmlns:xlink="http://www.w3.org/1999/xlink">p</inf> an increase R xmlns:xlink="http://www.w3.org/1999/xlink">0</inf> . The mechanism was investigated by electrical structural analyses SEM, microprobe, Auger spectrometry, turns out to be thermally activated Au-GaAs interdiffusion...

The piezoresistivity coefficients in p- and n-channel MOS transistors manufactured on silicon wafers cut parallel to the (111) (100) planes as a function of VD, VG temperature, between -20 120 degrees C, have been measured with particular aim investigating possible application for strain measurements, by comparing advantages disadvantages bulk diffused resistors. characteristics devices can be consistently better than corresponding ones semiconductor gauges, particularly regards temperature...

A thorough investigation has been done about the behavior of natural diamond as a radiation detector material for wide temperature range. Drift velocities and mean free drift time have determined at temperatures ranging between 85 K 700 with electric fields up to 60 KV/cm. Average energy required create an electron-hole pair resolution measured in 100 - 400 interval. The spectroscopic features detectors also analyzed on broad It was found that T approaches 500 polarization phenomena begin,...

We have performed, with the time-of-flight technique, an extensive investigation of transport properties holes in high-resistivity CdTe as a function temperature between 130 and 430 °K for electric fields 5 kV/cm 50 kV/cm. In all investigated samples, at temperatures below 300 °K, experimental hole mobility decreases on lowering either or field. These features been interpreted basis field effect trapping detrapping phenomena (Poole-Frenkel effect) which cause reduction mobility. A critical...

Short-channel Ga/sub 0.47/In/sub 0.53/As high electron mobility transistors (HEMTs) suffer from low breakdown voltages due to enhanced impact-ionization effects in the narrow bandgap channel. This could limit application of single-channel devices medium power millimeter-wave systems. A composite 0.53/As/InP channel, which exploits at electric fields, and saturation velocity InP fields can overcome this limitation. In paper we study on-state off-state composite-channel HEMT's with a variable...