A5065468348- Advanced Sensor and Energy Harvesting Materials
- Semiconductor materials and devices
- Polydiacetylene-based materials and applications
- Silicon and Solar Cell Technologies
- Non-Invasive Vital Sign Monitoring
- Thin-Film Transistor Technologies
- Vestibular and auditory disorders
- Advancements in Semiconductor Devices and Circuit Design
- Gait Recognition and Analysis
- Injury Epidemiology and Prevention
- Neuroscience and Neural Engineering
- Muscle activation and electromyography studies
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Ocular Surface and Contact Lens
Shahid Beheshti University
2014-2022
Drowning is considered amongst the top 10 causes of unintentional death, according to World Health Organization (WHO). Therefore, anti-drowning systems that can save lives by preventing and detecting drowning are much needed. This paper proposes a robust waterproof sensor-based device detect distress in swimmers at varying depths different types water environments. The proposed comprises four main components, including heart rate, blood oxygen level, movement, depth sensors. Although these...
This study reports on the electronic properties of industrial phosphorus-doped n-type silicon ingots for photovoltaic applications grown using Recharged Czochralski method. The quality is assessed via carrier lifetime measurements, both directly and passivated wafers, implied open-circuit (iVOC), maximum power point (iVMPP) voltages. wafers are studied in as-grown state, after various high temperature steps, including Tabula Rasa, phosphorus diffusion gettering, boron diffusion. material...
In this article, an effective control system based on a deep learning (DL) algorithm is designed to administer and actuate in-house 3-D printed robotic hand using myoelectric sensors. Five servo motors are utilized the hand's components with 17 degrees of freedom (DoFs). This research investigated minimum number sensors hands fingers. A convolutional neural network (CNN) also employed recognize finger movements' patterns, classify gestures. Experiments conducted in presence one three forearm...
In this paper, the quantum transport of a Germanium based Gate-All-Around NanoWire Transistor, GAANWT is simulated in nanoscale regime. We have implemented 3D ballistic simulator on Non-Equilibrium Green Function, NEGF, formalism within effective mass approximation and mode space approach. Due to low Germanium, it promising channel material The size quantization nanowires results formation discrete energy levels along channel. comprehensively investigated key parameters that may affect...