A5052587010- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- MXene and MAX Phase Materials
Xiangtan University
2020-2021
Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO)-based ferroelectric field-effect transistors (FeFETs) with HfO seed layer were investigated for radiation-hard nonvolatile memory applications. First, it was found that the HZO thin films grown on showed improved crystallinity and ferroelectricity compared those directly SiO film, leading to a larger window (MW), better...
Non-volatile field-effect transistor (FET) with amorphous Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> dielectric is demonstrated on Si substrate, which enabled by the voltage modulation of oxygen vacancy and negative charge dipoles in gate insulator. Ferroelectric-like behavior TaN/Al /Si xmlns:xlink="http://www.w3.org/1999/xlink">0.70</sub> Ge...
Exploring the high-performance non-volatile memories for realizing energy-efficient memory in complementary metal-oxide-semiconductor (CMOS) circuits, memory-in-computing, and artificial synapse is key to rapid growth data markets. One of significant aspects development field-effect transistor (NVFET), which possesses advantage decoupling "write" "read" functions using third terminal. In this work, building on a semiconductor channel integrated with an amorphous Al <sub...
Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO2−based thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have focused on the stability of multiple memory states FeFETs. Here we firstly report write/read disturb effects Hf0.5Zr0.5O2 (HZO)−based The HZO−based FeFETs do not show obvious degradation write read cycles. Moreover, retention characteristics intermediate unsaturated...