A5101720865- Photonic and Optical Devices
- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Semiconductor Quantum Structures and Devices
- Optical Network Technologies
- Photonic Crystals and Applications
- ZnO doping and properties
- Semiconductor Lasers and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Physics of Superconductivity and Magnetism
- MXene and MAX Phase Materials
- Advanced Fiber Laser Technologies
- Semiconductor materials and interfaces
- Neural Networks and Reservoir Computing
- Geomechanics and Mining Engineering
- Bone Tissue Engineering Materials
- Analytical Chemistry and Sensors
- Geoscience and Mining Technology
- Optical Coatings and Gratings
- Advanced Photonic Communication Systems
- Magneto-Optical Properties and Applications
- Magnetic and transport properties of perovskites and related materials
Chinese Academy of Sciences
2015-2025
Institute of Microelectronics
2015-2024
Institute of Geochemistry
2024
First People's Hospital of Foshan
2024
Shihezi University
2023
Zhejiang Ocean University
2023
University of Chinese Academy of Sciences
2021
Wuhan National Laboratory for Optoelectronics
2016-2021
Huazhong University of Science and Technology
2016-2021
Nanjing Institute of Technology
2006
Atomic-resolution Cs-corrected scanning transmission electron microscopy revealed local shifting of two oxygen positions (OI and OII) within the unit cells a ferroelectric (Hf0.5Zr0.5)O2 thin film. A reversible transition between polar Pbc21 antipolar Pbca phases, where crystal structures 180° domain wall phase cell structure were identical, was induced by applying appropriate cycling voltages. The critical field strength that determined whether film would be woken up or fatigued ~0.8 MV/cm,...
After more than five decades, Moore’s Law for transistors is approaching the end of international technology roadmap semiconductors (ITRS). The fate complementary metal oxide semiconductor (CMOS) architecture has become increasingly unknown. In this era, 3D in form gate-all-around (GAA) are being considered as an excellent solution to scaling down beyond 5 nm node, which solves difficulties carrier transport channel region mainly rooted short effects (SCEs). parallel Moore, during last two...
Abstract The ferroelectric field‐effect transistor (FeFET) is a promising memory technology due to its high switching speed, low power consumption, and capacity. Since the recent discovery of ferroelectricity in Si‐doped HfO 2 thin films, ‐based materials have received considerable interest for development FeFET, particularly considering their excellent complementary metal‐oxide‐semiconductor (CMOS) compatibility, relatively permittivity, coercive field. However, multilevel capability...
Resistive memory (RRAM) provides an ideal platform to develop embedded non-volatile computing-in-memory (nvCIM). However, it faces several critical challenges ranging from device non-idealities, large DC currents, and small signal margins. To address these issues, we propose voltage-division (VD) based computing approach its circuit implementation in two-transistor-two-resistor (2T2R) RRAM cell arrays, which can realize energy-efficient, sign-aware, robust deep neural network (DNN)...
Abstract Rhenium (Re) and uranium (U) are essential proxies in reconstructing past oceanic oxygenation evolution. However, their removal continental shelf sediments, hotspots of early diagenesis, were previously treated as quantitatively unimportant sinks the ocean. Here we examine sedimentary reductive Re U coupling with organic carbon decomposition, utilizing 224 Ra/ 228 Th disequilibria within East China Sea shelf. We identified positive correlations between fluxes rates sediment oxygen...
The full exploration of Si-based photonic integrated circuits is limited by the lack an efficient light source that compatible with complementary metal–oxide–semiconductor process. Highly strained germanium (Ge) a promising solution, as its band structure can be fundamentally altered introducing tensile strain. However, main challenge lies in incorporation electrical while maintaining high strain uniform distribution active region. Here we present highly Ge LEDs driven lateral p–i–n...
Field-free spin–orbit torque switching in synthetic antiferromagnets (SAF) holds significant promise for high-density spintronic memory and logic devices. In this paper, we realize the field-free magnetization SAFs due to local ion implantation-induced 45° lateral interface symmetry breaking. Moreover, ratio is enlarged by owing superimposition of a damping-like effective field symmetry-breaking field. Our work development magnetic random-access technology with high-speed anti-interference ability.
To reduce the energy-consuming and time latency incurred by Von Neumann architecture, this brief developed a complete computing-in-memory (CIM) convolutional macro based on ReRAM array for layers of LeNetlike neural network (CNN). We binarized input layer first to get higher accuracy. The proposed ReRAM-CIM is suitable as an IP core any networks' layers. This customized bit-cell consisting 2T2R cells, regarded 9 × 8 bit-cells one unit achieve high hardware compute accuracy, great...
We propose a field-free magnetic switching method in perpendicular spin-orbit torque tunneling junction on 200 mm wafer. The can be achieved by unipolar current pulses via engineering the interlayer exchange coupling thin ferromagnetic films. proposed device reach high writing speed of up to 1 ns and work properly at temperature 100°C. This novel scheme offers an alternative approach for random access memory.
We propose and demonstrate a reconfigurable logic gate based on single spin-orbit torque magnetic tunnel junction (SOT-MTJ) device operated by unipolar voltage inputs. The SOT-MTJ used in the can be switched between high low resistance state when large small amplitude pulses inject to it. Based this switching characteristic, gates of XOR, XNOR NOT are designed realized different with same sign. Compared spin logics bipolar current signals as inputs, our implementation uses much less...
Abstract We conducted research on the integration technology of a spin transfer torque-based magnetoresistive random access memory (STT-MRAM) cell (one transistor, one magnetic tunnel junction – 1T-1MTJ) an 8-inch process platform. By combining 0.5 μ m CMOS front end line and STT-MTJ back process, 1T-1MTJ device with MTJ approximately 80 nm is realized. The Resistance(R)-magnetic field(H) measurement reveals coercive force 450 Oe for MTJ. Nevertheless, exhibits critical switching current 4.7...
We design and simulate a Ge/SiGe multiple quantum wells (MQWs) modulator based on confined Stark effect (QCSE) that operates at 1550 nm. By introducing thick well thin barrier in structure, the compressive strain of Ge is reduced absorption edge shifted to longer wavelength. An 8-band k⋅p model employed calculate eigenstates spectra, influences parameters property analyzed discussed. The numerical simulation indicates bias voltage remarkably 0.5 V with 1 swing for 10 wells, while still...
We investigate the magnetic and electric transport performance of spin-orbit torque tunnel junction (SOT-MTJ) with perpendicular anisotropy (PMA) by stop-on-MgO etching process. This process etches away hard mask (HM), synthetic antiferromagnetic layer (SAF) reference (RL) while keeping MgO barrier free (FL) retained. Compared SOT-MTJ without process, exhibits nearly zero offset field ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">...
Decalcified bone matrix has great potential and application prospects in the repair of defects due to its good biocompatibility osteogenic activity. In order verify whether fish decalcified (FDBM) similar structure efficacy, this study used principle HCl decalcification prepare FDBM by using fresh halibut as raw material, then degreasing, decalcifying, dehydrating freeze-drying it. Its physicochemical properties were analyzed scanning electron microscopy other methods, was tested vitro vivo...
We propose and analyze theoretically electro-absorption modulators with uniaxially tensile strained Ge/Si0.19Ge0.81 multiple quantum wells (MQWs). The effects of uniaxial strain on band structures including Γ-valley L-valley are discussed. simulation results indicate that the absorption contrast TE mode is improved by 3.1 dB while TM reduced two-thirds under 1.6% strain. Zero-biased covering 1380-1550 nm wavelength can be achieved introducing 0.18%-1.6% Taking into account TE-polarized...
Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity phase modulation with a low bias voltage in silicon photonic integration. The CQWs consisting of two wells different widths are employed as the active region to enhance electro-optical characteristics device by controlling coupling wave functions. fabricated can realize 5 dB extinction ratio at 1446 nm 1.4 × 10 −3 electrorefractive index variation 1530 associated...
We propose and design uniaxially tensile stressed bulk Ge Ge/SiGe quantum well lasers with the stress along <100> direction. The micro-bridge structure is adapted for introducing uniaxial in well. To enhance fabrication tolerance, full-etched circular gratings high reflectivity bandwidths of ~500 nm are deployed laser cavities. compare analyze density state, number states between Γ- L-points, carrier injection efficiency, threshold current lasers. Simulation results show that much higher...
We report a robust perpendicularly magnetized β-W/CoFeB/MgO multilayer structure. For the first time, we demonstrate efficient spin–orbit torque (SOT) switching and highly thermally stable annealing process with this structure using X-ray diffraction tests, harmonic technique, SOT-driven magnetization measurements. These results may enable applications of SOT-based magnetic random access memory, which is required for integration in CMOS back-end-of-line process.
Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO2−based thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have focused on the stability of multiple memory states FeFETs. Here we firstly report write/read disturb effects Hf0.5Zr0.5O2 (HZO)−based The HZO−based FeFETs do not show obvious degradation write read cycles. Moreover, retention characteristics intermediate unsaturated...
This paper presents a comparative investigation of flatband voltage (VFB) adjustment scheme with the nitrogen plasma treatment (NPT) in high-k/metal-gate (HKMG) Metal-Oxide-Semiconductor Capacitor (MOSCAP) for scaling further CMOS fabrication technology. The NPT process on first ALD-TiN capping layer demonstrates significant VFB modulation capability and causes controllable effective gate work function metal-gate: 1) shifting to band center increasing RF powers both P-/N-MOSCAPs; 2) opposite...
We have proposed a polarization-insensitive laterally tapered coupler for the integration of active Ge/SiGe multi-quantum-well device with passive SiGe waveguide. A 45-μm-long taper is designed to achieve more than 90% coupling efficiency both TE- and TM-polarized modes. The mode interference utilized obtain compact high efficiency. Fabrication tolerances are analyzed in terms width, thickness, material refractive operation wavelength. results indicate that width variation ± 200 nm thickness...