A5081242683- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Geotechnical Engineering and Soil Stabilization
- Geotechnical Engineering and Underground Structures
- Landfill Environmental Impact Studies
- Nanowire Synthesis and Applications
- Structural Behavior of Reinforced Concrete
- Structural Load-Bearing Analysis
- Thermal Radiation and Cooling Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- MXene and MAX Phase Materials
- Masonry and Concrete Structural Analysis
- Building materials and conservation
- Photonic Crystal and Fiber Optics
- Advanced Fiber Laser Technologies
- Geotechnical Engineering and Analysis
- Low-power high-performance VLSI design
- Photochromic and Fluorescence Chemistry
- Nonlinear Optical Materials Studies
- Seismic Performance and Analysis
- Urban Heat Island Mitigation
- Phase Change Materials Research
- Laser-Matter Interactions and Applications
- Innovative concrete reinforcement materials
Institute of Microelectronics
2017-2022
Chinese Academy of Sciences
2006-2022
University of Chinese Academy of Sciences
2017-2022
Donghua University
2021-2022
Nanjing University of Science and Technology
2021
Shanghai University
2015-2018
Southeast University
2015
Louisiana State University
2007-2014
Hebei GEO University
2013
Louisiana State University Agricultural Center
2011
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si nanosheet (NS) transistors on bulk substrate are systemically investigated. The release process NS channels was firstly optimized to achieve uniform device structures. An over 100:1 selective wet-etch ratio GeSi layer achieved for GeSi/Si stacks samples with different thickness (5 nm, 10 and 20 nm) or annealing temperatures (≤900 °C). Furthermore, influence ground-plane (GP) doping in sub-fin region...
A finite-element response model was developed using ABAQUS software package to investigate the effect of geogrid base reinforcement on a flexible pavement structure. Finite-element analyses were then conducted different unreinforced and geogrid-reinforced sections. In this analysis, course (BC) layer modelled an elasto-plastic bounding surface model. The results showed that reduced lateral strains within BC subgrade layers, vertical strain shear at top subgrade, permanent deformation. higher...
Novel A–π–D–π–A V-shaped 3,6-bis(phenylethynyl)carbazole based chromophores were designed and synthesized as two-photon polymerization (TPP) initiators combining a large absorption cross-section with facilitated radical formation. 9-Benzyl-3,6-bis(4-nitrophenylethynyl)carbazole (4d) shows strong around 800 nm exhibits very high initiating sensitivity threshold power of 0.8 mW at the concentration 0.18 mol%, which is much lower than 6.37 found for benzil. The corresponding laser exposure...
A magnetic field sensor using fiber ring cavity laser based on fluid (MF) is proposed and experimentally demonstrated. MF-coated single-mode-no-core-singlemode structure inserted in the cavity, which acts as a bandpass filter sensing component simultaneously. The excellent filtering with high side-mode suppression ratio (14 dB) small insert loss of around (-1.03 caused by self-imaging effect. experimental results show that lasing wavelength shifts to blue side increase external field....
A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body immunity GAA Si NW MOSFETs observe two-fold degenerate hole sub-bands in (110) channel...
One and two dimensional (1D 2D) carbazole based hemicyanines, where methyl pyridinium, indolium benzothiazolium were used as acceptor group, synthesized by Knoevenagel condensation. One-photon absorption, fluorescence two-photon spectra investigated. The experimental results indicated that the different ionic acceptors affect their one-photon properties. Among them, 2D pyridinium derivatives exhibited low quantum yields large absorption cross sections more than 1600 GM. compounds...
A new approach of narrowing sub-fin with little extra process cost for suppressing parasitic-channel-effect (PCE) on vertically-stacked horizontal gate-all-around (GAA) Si nanosheet field-effect-transistors (NS-FETs) is proposed. The proposed design demonstrates systematical technical advantages by calibrated 3D TCAD simulation, including 70% reduction in sub-channel gate-induced drain leakage (GIDL) current, over 20% promotion on-off current ratio ( <inline-formula...
In order to achieve ultra-low power (ULP), ICs are being designed for V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> ≤ 0.5 V. At these low voltages, random dopant fluctuations (RDFs) result in a stochastic component of logic delay that can be comparable the global corner delay. Moreover, probability density function (PDF) this highly non-Gaussian. predict statistical impact RDF-induced local variations on timing, it is necessary...
This paper presents a statistical leakage estimation method for FinFET devices considering the unique width quantization property. Monte Carlo simulations show that conventional approach underestimates average current of by as much 43% while proposed gives precise with an error less than 5%. Design example on subthreshold circuits shows effectiveness method.
Complementary FET (CFET) is a promising candidate for CMOS scaling beyond 3-nm technology node. In this article, novel hybrid channel CFET (HC-CFET) proposed, which takes advantage of the vertical structure and simultaneously co-optimizes preferred high-electron/hole-mobility surface NMOS/PMOS on one substrate. The flexible combination nanowires (NWs) nanosheets (NSs) in HC-CFET allows NMOS to have (100) orientation, while PMOS has (110) orientation without increasing footprint pillars....
In this article, one feasible fabrication approach for novel fishbone FETs using the channel-first and single work function metal (sWFM) processes is proposed investigated by 3-D technical computer-aided design (TCAD) simulations. Through a small modification on process of general gate-all-around (GAA) nanosheet (NSFETs), special fishbone-like channel composed vertically stacked Si NSs sandwiched SiGe nano-fins experimentally demonstrated process. The simulated electrical characteristics...
A type of p-channel fin-on-insulator (FOI) FinFET charge trapping memory devices with HfO2 layer, Al2O3 tunneling layer and blocking layers along [TiN/W] metal gate (Metal/Al2O3/HfO2/Al2O3/Si, named as MAHAS in short) have been successfully fabricated. It is found that the new non-volatile memory, FOI-MAHAS shows better performance compared counterparts reported earlier owing to adoption p-type FOI channel specific high-κ dielectrics. The static DC electrical characteristics fabricated...
Finite element analyses were conducted to assess the benefits of reinforcing embankment soil low medium plasticity with geogrids beneath a strip footing from perspective ultimate bearing capacity and settlement. The was modeled Drucker-Prager constitutive model, soil-geogrid interaction by Coulomb friction model. finite model verified first laboratory tests; it then used analyze sitting on reinforced seek an optimum reinforcement design. To this end, several geogrid-reinforcement design...
HfO2-based ferroelectric materials have been widely studied for their application in FETs, which are compatible with conventional CMOS processes; however, problems the material’s inherent fatigue properties limited its potential device application. This paper systematically investigates effects of tensile stress and annealing temperature on endurance faced by Zr-doped HfO2 film. The remnant polarization (Pr) shows an increasing trend temperature, while change coercive electric field (Ec) is...
In this letter, the endurance characteristics of negative capacitance (NC) FinFETs with an ultra-steep subthreshold swing (SS) and negligible hysteresis were investigated by examination approach to emulate long-term logic operation. Detailed variation for different electrical parameters are summarized devices subjected up 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> switching pulse cycles. The average values threshold voltages (V...
Quinoidal oligothiophenes have recently emerged as a promising class of organic semiconductors for electronics. In this study, solution-processed neat films novel n-type quinoidal quaterthiophene modified with electron-withdrawing groups [QQT(OMe)2] are characterized in details by absorption spectroscopy, ultraviolet photoelectron atomic force microscopy, Raman spectroscopy and field-effect transistor characteristics. Top-contact Au source/drain electrodes shows the saturation regime...
This paper presents a comparative investigation of flatband voltage (VFB) adjustment scheme with the nitrogen plasma treatment (NPT) in high-k/metal-gate (HKMG) Metal-Oxide-Semiconductor Capacitor (MOSCAP) for scaling further CMOS fabrication technology. The NPT process on first ALD-TiN capping layer demonstrates significant VFB modulation capability and causes controllable effective gate work function metal-gate: 1) shifting to band center increasing RF powers both P-/N-MOSCAPs; 2) opposite...
In this article, a p-type high-k /metal gate (HKMG) FinFET with special diamond-shaped channel on bulk Si substrate for the formation of gate-induced quantum dot (QD) is reported. The electrical characteristics device at various temperatures and bias voltages QD are extensively investigated. Remarkable oscillations in drain current observed 30-nm length (L_g ) transistor T =20 K. By analyzing experimental results as well simulation data obtained by TCAD, it found that carriers strongly...
Developing novel silicon quantum dots (Si-QDs) on conventional CMOS process is one of the most important technologies in Si computing to realize multi-bit integration with a large scale. In this paper, an analysis model based master equation and realized by Python code established predict optimize performance fabricated diamond channel Si-QDs for potential circuit applications. The can fast describe I-V characteristics devices both qualitative semi quantitative method. inherent tunneling be...
Organic cations, 1-methyl-4-[2-(9-ethyl-carbazol-3-yl)vinyl] pyridinium (ECMP+) and 1-methyl-4-[2-(9-methyl-carbazol-3-yl)vinyl] (MeCMP+), were synthesized by introducing the carbazole moiety into stilbazolium-like structures to form an L-shaped molecular structure, breaking symmetry of common stilbazolium cations; crystal organic salts (ECMP+TsO− MeCMP+TsO−) with tosylate anions (TsO−) show helical due multi-interactions such as electrostatic charge, hydrogen bonding, π–π stacking well...