A5006142662- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Copper Interconnects and Reliability
- Advanced Memory and Neural Computing
- Silicon Nanostructures and Photoluminescence
- ZnO doping and properties
- Ferroelectric and Negative Capacitance Devices
- Electrical Contact Performance and Analysis
- 3D IC and TSV technologies
- Metal and Thin Film Mechanics
- Advanced Sensor and Energy Harvesting Materials
- Magnetic properties of thin films
- Magnetic Properties of Alloys
- Engineering Applied Research
- Shape Memory Alloy Transformations
- Electrostatic Discharge in Electronics
- Ion-surface interactions and analysis
- Advanced Materials and Mechanics
- Conducting polymers and applications
- Magnetic Properties and Applications
Institute of Microelectronics
2012-2025
Chinese Academy of Sciences
2014-2025
Beijing Academy of Science and Technology
2023-2024
North University of China
2022
University of Chinese Academy of Sciences
2017-2021
Ningbo Institute of Industrial Technology
2011-2012
A new type of vertical nanowire (NW)/ nanosheet (NS) field-effect transistors (FETs), termed sandwich gate-all-around (GAA) FETs (VSAFETs), is presented in this work. Moreover, an integration flow that compatible with processes used the mainstream industry proposed for VSAFETs. Si/SiGe epitaxy, isotropic quasi-atomic-layer etching (qALE), and gate replacement were to fabricate pVSAFETs first time. Vertical GAA self-aligned high-k metal gates a small effective-gate-length variation obtained....
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si nanosheet (NS) transistors on bulk substrate are systemically investigated. The release process NS channels was firstly optimized to achieve uniform device structures. An over 100:1 selective wet-etch ratio GeSi layer achieved for GeSi/Si stacks samples with different thickness (5 nm, 10 and 20 nm) or annealing temperatures (≤900 °C). Furthermore, influence ground-plane (GP) doping in sub-fin region...
The improved thermal stability of cobalt silicide (CoSi <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> ) becomes pivotal with the introduction a 4F notation="LaTeX">$^{\text{2}}$</tex-math> cell architecture, featuring vertical pillar transistor for DRAM application. To tackle this challenge, carbon preamorphization implantation (C PAI) was employed. This study...
An ultra-dense one-transistor (1T) ternary-content addressable memory (TCAM) array is reported that based on high-performance, non-volatile, and ambipolar ferroelectric (Fe) silicon-on-insulator (SOI) fin field-effect transistors (FinFETs). Because of the multistates in Fe layer characteristics, TCAM functions were realized a single device. From advanced CMOS process metallic source drain (MSD) engineering, maximum driving ON-current <inline-formula...
We presented and demonstrated a new type of vertical nanowire (NW) nanosheet (NS) field-effect transistors (FETs), named sandwich gate-all-around FETs or VSAFETs, which were formed with the process compatible in main stream industry. The VSAFETs self-aligned high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> metal gates (HKMGs) fabricated epitaxy Si/SiGe/Si structure,...
Nonvolatile logic devices are crucial for the development of logic-in-memory (LiM) technology to build next-generation non-von Neumann computing architecture. Ferroelectric field-effect transistors (Fe FET) one most promising candidates LiMs because high compatibility with mainstream silicon-based complementary metal-oxide semiconductor processes, nonvolatile memory, and low power consumption. However, unipolar characteristics a Fe FET, nonlinear XOR or XNOR gate function is difficult...
Since the contact resistance characterized by a specific resistivity (ρc) in source/drain (S/D) regions is becoming bottleneck for further improving device performance, criteria selecting S/D materials, e.g. silicides, therefore more concerned with ρc state-of-the-art fin channel field-effect-transistors rather than sheet (Rsh) of silicides conventional planar devices. In these circumstances, Ti-based ohmic contacts prevail over Ni(Pt)Si-based ones, and they serve as standard advanced...
In this paper, the impact of different Ge preamorphization implantation (PAI) conditions on formation ultrathin TiSi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> as well specific contact resistivity (Pc) in /n-Si contacts was investigated systematically. Extensive material characterizations, such cross-sectional transmission electron microscopy, X-ray diffraction, and angle-resolved photoelectron spectroscopy, electrical...
Whether amorphous oxide semiconductor (AOS) is an enabler or pass-by for monolithic 3D DRAM discussed, with current challenges and future directions proposed in this perspective.
This brief explores the specific contact resistivity (Pc) of NiGe/n- and p-Ge contacts with without carbon pregermanidation implantation. It is found that in presence carbon, not only thermal stability NiGe films improved, but also Pc reduced remarkably due to enhanced phosphorus (P) boron (B) dopant segregation (DS) at NiGe/Ge interface after nickel germanidation. At 500 °C germanidation temperature, values are from 1.1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
This investigation reveals a practical method for improving thermal stability and reducing the specific contact resistivity (ρ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) of titanium-based Ohmic contact. Inserting an ultrathin molybdenum (Mo) layer, with thicknesses ranging from 3 to 10 Å, between titanium (Ti) heavily doped silicon (Si) substrates effectively impedes further diffusion Si into metal layer. Mo silicide contributes...
Abstract The absorption of hydrogen by NdFeB magnet has been investigated using the electrochemical charging technique at constant cathodic current density I c ranging from 0 to 4 mA/cm 2 . Open circuit potential measurements (OCP) and polarization curves were carried out study corrosion behavior charged in 0.01 mol/L NaCl solution. results showed that had a strong influence on magnet. open became gradually negative due incorporation into resistance was reduced with increasing surface...
In this paper, in order to improve the driving ability of vertically-stacked gate-all-around (GAA) Si nanosheets (NSs) devices, a high-efficiency hybrid pattern technique with SiNx spacer-image transfer (SIT) and conventional photolithography was proposed implemented form size-enlarged landing pads (LPs) on nanscale fins at same time, which increase volumes electrical conductance pathway between NS channels source drain (SD) electrodes high process efficiency compatibility traditional mass...
From the 22 nm 3D FinFET technology node, Ti silicide-last contact scheme based on ultrathin TiSix (0 < x< 2) has replaced Ni(Pt)Si employed widely in previous planar CMOS nodes, due to its inherent advantages. Most work direct contacting with Si focuses improving specific resistivity (ρc) by all means. The detailed investigation formation of at relatively low temperature (≤600°C), is, however, rarely reported. In this work, a fundamental material' study highly P-doped substrates different...
The scaling of interconnect dimensions is becoming increasingly difficult due to the fast rise line/via resistance. To alleviate this problem, Co has a high potential as an alternative material Cu or W in metallization schemes. In article, used local interconnects, and Co–Ti proposed single barrier/liner replace conventional thick TiN/Ti bilayer. samples with without were fabricated investigate barrier property Co–Ti. Meanwhile, reaction mechanism between Co/Co–Ti Si was comprehensively...
Abstract Currently, sensors based on hydrogels are less sensitive at low temperatures, and discarded prone to generate e‐waste. Thus, it is challenging design prepare novel with good properties for wearable sensors. Herein, we report a sandwich‐structure liquid metal organic hydrogel low‐temperature sensitive, recyclable multiple sensation properties. Liquid (LM)/cross‐linked chitosan quaternary ammonium salt (CHACC) composite prepared by evaporating ethanol water co‐solvent as the core...
As preamorphization implant (PAI) for Ti-based ohmic contacts on n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si is explored in this article. With implantation at 3 keV/5 × 10 xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> , the specific contact resistivity (ρ <sub xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) of TiSi...
The impact of As preamorphization implant (PAI) on specific contact resistivity ( ρ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) is investigated for Ti-based Ohmic contacts n <sup xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si in this article. value TiSi xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /n greatly improved with low-dose PAI whereas improvement impaired increased dose PAI. results from the joint effort...
This article explores the impacts of both Ge preamorphization implantation (PAI) and Si capping on specific contact resistivity (ρ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) Ni(Pt)SiGe/p <sup xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -SiGe contacts elaborately. Both PAI are found to be beneficial in reducing ρ remarkably, with Pc values reduced from original 20.03 × 10 xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup>...