A5100355583- Photonic and Optical Devices
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Advanced Battery Technologies Research
- Advancements in Battery Materials
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Semiconductor Quantum Structures and Devices
- Advanced Photonic Communication Systems
- Photonic Crystals and Applications
- High-Voltage Power Transmission Systems
- Electric and Hybrid Vehicle Technologies
- Power Transformer Diagnostics and Insulation
- Ferroelectric and Negative Capacitance Devices
- solar cell performance optimization
- Integrated Circuits and Semiconductor Failure Analysis
- Hydraulic and Pneumatic Systems
- Advanced Fiber Optic Sensors
- Semiconductor materials and interfaces
- Microgrid Control and Optimization
- Reliability and Maintenance Optimization
- Semiconductor Lasers and Optical Devices
- Islanding Detection in Power Systems
- HVDC Systems and Fault Protection
- Advanced Optical Sensing Technologies
Guangdong Greater Bay Area Institute of Integrated Circuit and System
2020-2024
East China University of Science and Technology
2023
Beijing University of Technology
2018-2019
University of Michigan
2007
Renfe Operadora (Spain)
2006
After more than five decades, Moore’s Law for transistors is approaching the end of international technology roadmap semiconductors (ITRS). The fate complementary metal oxide semiconductor (CMOS) architecture has become increasingly unknown. In this era, 3D in form gate-all-around (GAA) are being considered as an excellent solution to scaling down beyond 5 nm node, which solves difficulties carrier transport channel region mainly rooted short effects (SCEs). parallel Moore, during last two...
Accurately predicting the lifetime of lithium-ion batteries is critical for accelerating technological advancements and applications. Nevertheless, complex aging mechanisms dynamic operating conditions have remained major challenges. This paper proposes a method early cycle life based on weighted least squares support vector machine (WLS-SVM) with health indicators (HIs) as input. The HIs are extracted from voltage-capacity discharge curves, since these curves easy to measure strongly...
GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well future photonic electronic applications. This research presents a novel method to incorporate Sn content as 18% into layers grown at 285-320 °C by using SnCl4 GeH4 precursors. A series of characterizations were performed study the material quality, strain, surface roughness, optical properties layers. The could be calculated lattice mismatch parameters provided...
The successful implementation and commercialization of hybrid electric vehicles (HEV) rely largely on energy storage systems. Lithium-ion batteries offer potential advantages in density, power cost for this purpose. One the challenges imposed by lithium-ion battery is thermal management. best operating temperature from -10degC to 50degC. An effective management system critical maintain health life span battery. A good starts with accurate prediction conditions This paper aimed evaluate a...
The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD integrated on an advanced GaAs virtual substrate. layer was originally grown Ge as another substrate Si wafer. No patterned or sophisticated superlattice defect-filtering involved. Thanks to the improved quality comprehensively modified crystal with low defect density, room temperature emission wavelength this laser...
Broadband and omnidirectional antireflection coating is generally an effective way to improve solar cell efficiency, because the destructive interference between reflected incident light can maximize transmission into absorption layer. In this paper, we report quantum efficiency ηin, not energy or power, as evaluation function by ant colony algorithm optimization method, which a swarm-based method. Also, SPCTRL2 proposed be incorporated for accurate irradiance on receiver plane dependent...
The 4.2% mismatch at the Si/Ge interface has a significant impact on photodetectors. However, few researchers have attempted to determine major noise source or study effects of dark current, responsivity and 3-dB bandwidth these devices. In this letter, we found that current was dominated by generation-recombination processes were enhanced trap-assisted-tunneling around below 220 K, with characteristic tunneling energy E00 = 14 meV corresponding an effective mass m* 18m0. This behavior can...
This article presents a novel method to grow high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying RPCVD technique. The procedures are composed of global layer followed by planarization CMP as initial process steps. parameters were carefully optimized and after cycle-annealing treatments, threading dislocation density (TDD) was reduced 3 × 107 cm−2. As result this process, tensile strain 0.25% induced, whereas RMS value low 0.81 nm. Later,...
In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to significantly decrease the defect density and create fully strained relaxed on Si substrate. With single-step SEG Ge, threading (TDD) successfully decreased from 2.9 × 107 cm-2 in globally grown layer 3.2 105 for 2.84 layer. This means that by introducing single step, could be reduced two orders magnitude, but reduction further only 11.3% second step. The final root mean square (RMS) surface roughness...
The development of the low dislocation density Si-based GaAs buffer is considered key technical route for realizing InAs/GaAs quantum dot lasers photonic integrated circuits. To prepare high-quality layer on Si substrate, we employed an engineered Ge-buffer Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce threading in active part laser. In this way, a defect 2.9 × 107 cm-2 could be achieved with surface roughness 1.01...
We report high-speed large-area silicon photodetectors (PDs) that were fabricated on silicon-on-insulator (SOI) substrates. These coplanar interdigital PDs with finger spacing in the 0.5-5 μm range. One of detectors, which had an area 2300 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , achieved a bandwidth as high 14.1 GHz under bias voltage -10 V at wavelength 850 nm. Meanwhile, device maximum 4300 also 7.9-GHz bandwidth, suggesting...
In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus preparation high-aspect-ratio (AR) fin structures, appropriate etching topography and growth germanium (Ge) as material highly compressive strain. Two methods, wet in situ HCl dry were studied to achieve better topography. addition, selective epitaxial performed on patterned substrate using reduced pressure chemical vapor deposition. results show that V-shaped structure formed...
Step-coupler waveguide-integrated Ge/Si avalanche photodetector (APD) is based on the vertical multimode interference (MMI), enhancing light scattering towards Ge active region and creating mirror images of optical modes close to layer. However, there are two ineluctable contact angels between selectively epitaxial growth Si layers substrate, which has an effect coupling efficiency absorption photodetector. Therefore, step-coupled photodetectors with different step lengths designed...
AutomAted ReAl-time Absolute Positioning technology on intelligentFully mechAnised coAl FAces using the gyRo Rts systemThe absolute positions of shearers advancing coal faces are requisite for providing references adaptive mining combined with geological models.common coalmine localization techniques (e.g.uWB, inS, etc.) not fully applicable to due their drifting error or messy environment.The gyro robotic total station (RTS) is versatile and precise in measuring coordinates mines, while its...
As electric vehicles become more common there is increasing concern regarding battery disposal. Considering resource savings and environmental friendliness, reuse rather than disposal of retired batteries considered to be the most suitable solution. For safely efficiently reusing batteries, a precise state charge estimation over wide temperature range degradation scope crucial. The primary content this work described as follows. (1) To obtain accurate closed-loop estimation, model that...
With the development of modern city, there are a large number overhead and cable hybrid lines in urban power grid. Most faults permanent faults, auto-reclosing function is usually off order to avoid secondary reclosing onto system. This paper presents an intelligent method based on distributed monitoring terminal with 5th-Generation mobile network(5G) which suitable for accurate fault location line. The system composed terminals 5G device. directly installed transmission line, while device...