<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We present high-speed Ge p-i-n photodetectors for vertical incidence with high responsivity, grown by reduced pressure chemical vapor deposition. From the high-resolution X-ray diffraction analysis, epilayer shows good crystalline homogeneity and residual tensile strain of 0.16%. The fabricated device exhibits 3-dB bandwidth 36 GHz, responsivity 0.47 A/W, low dark current 42 nA at <formula...

Abstract Van der Waals (vdW) heterostructures (or heterojunctions) are formed by stacking two different 2D materials (e.g., graphene, h‐BN, or transition metal dichalcogenides) across vdW gaps. In a type‐II heterojunction, semiconductors aligned with staggered bandgaps, which can effectively separate electron and hole carriers, enable promising high‐performance photovoltaics photodetectors. Herein, an effective vdW‐homojunction is reported, one material (2H‐WS 2 ) gap engineering leading to...

In this paper, we report stable polarization switching in metal-HfZrOx (HZO)-metal capacitors when pulses are repeatedly applied from the initial state. By examining various process parameters including annealing method, temperature, and time, investigated optimal conditions for realizing ferroelectricity HZO layers deposited by sputtering systems. More specifically, examined how behaviors evolved as a function of temperatures. Our results showed that capped top electrode, temperature was...

With the increasing power demand of system-on-chip structures, an ultrathin body is increasingly important owing to its low leakage; silicon-on-insulator (SOI) technology used fabricate such platforms. However, contemporary SOI process and wafer itself are complex expensive. In this study, we developed easy fabrication that can be implemented on any desired local area a bulk silicon using commercially reduced-pressure chemical vapor deposition technique. A was fabricated through selective...

We developed a novel technique, selective epitaxial lateral overgrowth (ELO), to fabricate local but sufficiently large silicon-on-insulator (SOI) platform on conventional silicon wafers. Based high-level crystallinity of the SOI, we implemented reconfigurable FETs with three gates. These demonstrate n- and p-type behavior depending applied bias. Not only also their logic gates (inverter NAND) delivered sound performance. Using compact model based surface potential channel, derived key...

A new structure for polarization-selective elements, consisting of two holographic gratings and a Dove prism coupler, is proposed. The absence multistage waveguide the benefits compact size lightweight volume are outstanding features structure. Based on coupled-wave theory, analysis design discussed in detail to calculate required index modulation. Several parameters, such as recording intensity, exposure time, angles fabrication proposed element, determined. Under these conditions, element...

We report high-speed waveguide photodetectors with RPCVD-grown Ge on SOI. The device exhibits a 3 dB bandwidth of ~50 GHz, responsivity 0.8 A/W, and low dark current 35 nA at lambda ~ 1.55 mum.

A focusing grating coupler (FGC) in a polymer for wavelength of 405 nm was implemented on slab waveguide using nanoscale ultraviolet (UV) replication process. The FGC with high numerical aperture 0.85 designed by Bloch wave theory the minimum spacing between adjacent ridges 85 and replicated from master pattern. After UV irradiation at an energy density 2.68J∕cm2 loading force 1 kN 2 min, produced spot size 347 focal plane measured full width half maximum. out-coupling efficiency is 34%.

Microstructural and in turn functional failure of Si3N4 metal-insulator-metal (MIM) capacitors fabricated by plasma enhanced chemical vapor deposition was investigated using cross-sectional transmission electron microscopy residual stress analysis. As a result it manifested that the MIM caused microvoids formed over dielectric TiN interlayer adopted for use diffusion barrier. The microvoid having occurred at capacitor with very thin Si3N4–less than 50 nm thick present article to leak out...

In this paper, we propose both the 5 GHz CCNF Colpitts LC-tank VCO with less flicker noise upconversion and parallel-branch inductor 12 % Q-factor improvement. The proposed suppresses induced low-frequency of conventional differential pair as well high-frequency thermal tail current. Therefore, represents about 25-dB improvement phase compared to VCO. two kinds VCOs have been manufactured using SiGe HBT process technology, consume mA at 2 V bias voltage.

The formation of interconnect C54–TiSi2 on SiO2 substrates suffers severe structural instability upon rapid thermal anneal. To understand the from a mechanistic point view, we investigated interfacial features using Auger electron spectroscopy and cross-sectional transmission microscopy. As result, noted that surplus silicon layer retained at interface between thin film is indispensable for stabilization SiO2. We explained affirmative role in terms residual stress film.

We designed two silicon germanium (SiGe) varactors enhanced in Q factor through a structural modification by using cost-effective SiGe heterostructure bipolar transistor (HBT) process, conventional reduced-pressure chemical vapor deposition (RPCVD). As result, the suggested structures showed superiority (160/GHz/pF at 2.5 GHz) to one (70/GHz/pF), even with neither change process nor an additional mask. attributed enhancement of feature and quantitatively analyzed it lumped element model.

This paper presents the selective epitaxial growth (SEG) properties of reduced pressure chemical vapor deposition (RPCVD) at low temperatures (LT) 675-725°C with high aspect ratio mask dielectric films. The SEG process could be explained in conjunction loading effect, pattern shape/size, and parameters RPCVD. rates showed a large non-uniformity up to 40% depending upon size films, but as film becomes thicker, rate difference converged on -15% between narrow 2-μm wide 100-μm patterns....

Although silicon-on-insulator (SOI) technologies can help improve the performance of semiconductor devices, they have drawbacks, including high manufacturing cost and low productivity. Dr Dongwoo Suh, Materials Components Research Division, Electronics Telecommunications Institute, is working to overcome these limitations. His research concerns development core technology for reconfigurable field-effect transistors (RFETs) based on bulk complementary metal-oxide-semiconductor (CMOS) he his...

A focusing waveguide grating coupler made of hydrogen silsesquioxane is fabricated successfully. The size the 1 mm×1 mm and total device 8 mm×2 mm. numerical aperture minimum line width are 0.85 85 nm, respectively. spot this 335 nm for blue laser out-coupling efficiency 25.7%.

A leaky mode directional coupler was fabricated with its beam shaped into a Gaussian-like profile and experimentally demonstrated for suppressing the diffraction of an out-coupled beam. The consists multilayered waveguide six layers that are embedded in symmetric slab waveguide. measured to be Gaussian function by using prism coupling method. There excellent agreement between theoretically predicted angles, it also confirmed suppressed.

A micro-optical pickup has been implemented by using a focusing waveguide grating coupler. The coupler was designed and fabricated on single mode BPSG (boron phosphor silica glass) layer. coupling area 1&times;1mm² containing more than 1,500 lines, where the maximum minimum pitch were 296nm 811nm, respectively. focal length numerical aperture of present 530 &mu;m 0.68 with 632.8nm He-Ne red laser. full width half diameter spot measured to be 450 nm 510 in x y direction.

A new beam steering scheme using computer-generated holograms(CGHs) is proposed. The devices in order to control the reference and object wave are necessary various holographic multiplexing methods. device CGHs can be simultaneously processed coarse address function controlling up or down so as select slice fine adjusting particular page within chosen layer. From experimental results, we show that easily implemented powerful generate electrically addressed digital memory system.

A focusing grating coupler (FGC) using a blue laser of wavelength 400 nm as light source was fabricated for the first time. The FGC designed to have numerical aperture 0.48 and angle zero. focal length area were 900 &mu;m 1&times;1mm², respectively. Grating pattern minimum period 0.2&mu;m on single mode waveguide based boron phosphor silicate glass (BPSG) material by electron-beam lithography process vector scan method. spot size at full width (1/e²) measured 0.85...