A5100946897- 3D IC and TSV technologies
- Electronic Packaging and Soldering Technologies
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Geophysical Methods and Applications
- Additive Manufacturing and 3D Printing Technologies
- VLSI and FPGA Design Techniques
- Carbon Nanotubes in Composites
- Synthetic Aperture Radar (SAR) Applications and Techniques
- Semiconductor materials and interfaces
- Electrocatalysts for Energy Conversion
- Rock Mechanics and Modeling
- Acoustic Wave Resonator Technologies
- Digital Rights Management and Security
- Music Technology and Sound Studies
- Wireless Signal Modulation Classification
- Advanced Antenna and Metasurface Technologies
- Interactive and Immersive Displays
- Sensor Technology and Measurement Systems
- Graphene research and applications
- Cellular Automata and Applications
- Grey System Theory Applications
University of Electronic Science and Technology of China
2024
Qingdao University
2024
Institute of New Materials
2023
Guangdong Academy of Sciences
2023
Chengdu Surveying Geotechnical Research Institute
2023
Hangzhou Dianzi University
2015-2019
This paper presents the wideband modeling and analysis of differential through-silicon vias (D-TSVs) in 3-D ICs. An equivalent-circuit model ground-signal-signal-ground-type D-TSVs is given validated against a commercial full-wave electromagnetic simulation tool. The common- differential-mode impedances are extracted using partial-element method, while admittances calculated analytically, with MOS effects considered treated appropriately. circuit can also be used for studying annular TSVs...
A high-frequency analysis of Cu-carbon nanotube (CNT) composite through-silicon vias (TSVs) is conducted. The electrical modeling the Cu-CNT TSVs performed, with effective complex conductivity formulated for accurate characterization kinetic inductance. It shown that, after codepositing CNT Cu, can be improved and influence inductance variation suppressed in comparison TSVs. On other hand, exhibit little compromise performance yet much enhanced reliability by to Cu counterpart. That is,...
For through-silicon vias (TSVs) in a floating silicon substrate, electric fields from signal TSVs terminate at ground instead of the substrate. The MOS capacitance substrate is quite different that well-grounded Therefore, it essential to perform transient analysis such facilitate designs and applications 2.5-D 3-D ICs. This paper presents systematic study time-domain responses Impacts temperature are considered investigated thoroughly. equivalent circuit models developed applied predict...
This paper presents a high-frequency equivalent circuit model for on-chip coupled carbon nanotube (CNT) interconnects up to 100 GHz. By simplifying the model, S-parameters of can be acquired and validated by comparing with full-wave electromagnetic simulations. virtue effective complex conductivity, behaviors CNT are captured studied, impacts kinetic inductance treated appropriately.
In this paper, coaxial through-silicon via (C-TSV) is modeled and studied with the consideration of electrically floating inner silicon substrate. Nonlinear capacitances central outer shielding shell are accurately captured by solving cylindrical Poisson equation. By employing symbolically defined device block, nonlinear C-TSV combined into equivalent circuit model, their impacts on electrical characteristics examined.
Circuit model for TSV-based solenoid inductors is presented and investigated. Based on the measurement, related lumped circuit elements can be extracted, they are independent of operating frequency by virtue RL ladder. Hence, compatible with SPICE simulators. model, impacts design parameters quality factor inductance studied. Finally, frequency-thermal analysis carried out.
We investigated the transmission characteristics of Cu/CNT composite Through-silicon via (TSV) interconnects. The equivalent lumped-element circuit model was established, with effective conductivity employed for impedance extraction. impacts CNT filling ratio, temperature, and other geometrical parameters on performance were examined. sensitivity analysis TSVs carried out. electrical optimized by utilizing low-permittivity dielectrics or even air-gap.
High-performance RF-LDMOS, medium voltage (8-12V), and high (20-40V) NLDMOS PLDMOS devices, integrated in a modular 0.18 mum analog CMOS/RFCMOS technology platform, are described. Device design, process integration, manufacturability, reliability issues discussed. These devices among the highest performance their class. The successful integration of these has enabled us to address our roadmap growing wireless, analog, mixed-signal, power management markets
In this paper, the electrical modeling of on-chip copper-carbon nanotube (Cu-CNT) composite interconnects are carried out based on equivalent circuit model. The effective resistivity and propagation delay a driven long Cu-CNT interconnect versus length have been captured studied. obtained results show that with increasing, can provide superior performance over pure CNTs in advanced integrated circuits.
In this paper, the CNT TSVs, as well Cu/CNT composite are investigated based on equivalent circuit model. The effective complex conductivity, which incorporates kinetic inductive effect of CNTs, has been employed for high-frequency characterization. performance comparison between Cu, CNT, and TSVs carried out. It is found that can be utilized to improve system reliability without losing much performance.
Among various electrocatalysts, high-entropy alloys (HEAs) have gained significant attention for their unique properties and excellent catalytic activity in the hydrogen evolution reaction (HER). However, precise synthesis of HEA catalysts small sizes remains challenging, which limits further improvement performance. In this study, boron- nitrogen-doped porous carbon nanofibers (HE-BN/PCNF) with an
Using a multiple gated transistor core (MGTR) with different channel lengths, 5.4GHz LNA in 130nm SOI CMOS is demonstrated. 1V supply and consuming 3mA current, has 10.8dB gain, 0.65dB NF, 6dBm IIP3. The matched at input output from 5-6GHz using high Q on-chip inductors resistive substrate. achieves state-of-the-art NF compared to LNAs employing MGTR other linearization techniques, as well the highest figure of merits, FOM2 & FOM3 published LNAs.
A broadband linear 5.2 GHz CMOS LNA on 130nm Tower SOI process with record 0.6 dB noise-figure, 12dBm IIP3 and 10.4dB gain is demonstrated. Using on-chip high Q inductors resistive bias optimization of floating body transistor, the noise figure achieved. a 1V supply, circuit consumes 10mW power suitable for 802.11ax/ac/n WLAN applications. The matched at input output from 4.6-6GHz using inductors. achieves highest merits, FOM2 & FOM3 when compared to state-of-the-art measured LNAs.
TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe SBC18H3 which integrates production ready 240GHz F<sub>T</sub> / 270 GHz F<sub>MAX</sub> HBT on 1.8V/3.3V dual gate oxide CMOS in SBC18 platform. The high-speed NPNs have demonstrated NF<sub>MIN</sub> of ~2dB at 40GHz, BV<sub>ceo</sub> 1.6V and dc current gain 1200. This state-of-the-art also comes with P-I-N diodes isolation low insertion...
In this paper, a systematic test approach is presented for rapid detection of the defects in pre- and post-bond through-silicon vias (TSV). The cylindrical, annular, coaxial TSVs are studied using full-wave electromagnetic simulation. impacts open pinhole pre-bond can be effectively observed Z-parameter variation. Then, defect scheme developed by assuming that only induced bump bonding after repairing TSVs. By simple resistor chain, multi-open also located efficiently accurately.
The equivalent circuit model of on-chip GSG interconnects is presented, with the frequency-dependent impedance extracted by using partial-element (PEEC) method. Based on model, studies high-frequency performance single-walled carbon nanotube (SWCNT) are performed. kinetic inductance effect, as well temperature carefully considered employing effective complex conductivity.
In this paper, the carbon-based interconnects such as horizontal multilayer graphene (MLG) and vertical carbon nanotube through-silicon vias (CNT TSV) are investigated. Based on equivalent circuit model, electrical performance of these studied. Furthermore, by combining them, one novel 3-D interconnect is presented The heterogeneous structures also proposed in order to exploit nano-materials efficiently. It shown that Cu-graphene Cu/CNT composite TSVs could be utilized improve reliability future ICs.