Yue Hu

ORCID: 0000-0003-3461-4695
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • 3D IC and TSV technologies
  • Advanced Antenna and Metasurface Technologies
  • Thin-Film Transistor Technologies
  • MicroRNA in disease regulation
  • Metamaterials and Metasurfaces Applications
  • Semiconductor materials and interfaces
  • Antenna Design and Analysis
  • Carbon Nanotubes in Composites
  • Graphene research and applications
  • Advanced Sensor and Energy Harvesting Materials
  • Nanopore and Nanochannel Transport Studies
  • Electromagnetic Compatibility and Noise Suppression
  • Crystallization and Solubility Studies
  • Conducting polymers and applications
  • Head and Neck Cancer Studies
  • Advanced Fiber Optic Sensors
  • X-ray Diffraction in Crystallography
  • Electrostatic Discharge in Electronics
  • Energy Harvesting in Wireless Networks
  • Microgrid Control and Optimization
  • Target Tracking and Data Fusion in Sensor Networks
  • Oral health in cancer treatment

Jilin University
2025

Union Hospital
2025

Union Hospital
2025

Southern Medical University
2024-2025

Henan University of Traditional Chinese Medicine
2024-2025

Nanjing University of Chinese Medicine
2024-2025

Hangzhou Dianzi University
2015-2024

China University of Petroleum, East China
2024

Wuhan University
2012-2024

Guiyang Medical University
2024

We have developed a facile and straightforward approach for the continuous fabrication of graphene/polypyrrole (G/PPy) composite fibers via wet-spinning strategy. The diameter G/PPy can be well-controlled in range about 15–80 μm. Furthermore, fiber possesses high conductivity mechanical flexibility, thus offering significant advantages as flexible, lightweight electrodes an efficient fiber-based electrochemical supercapacitor. all-solid-state supercapacitor with H2SO4–polyvinyl alcohol...

10.1039/c4ta01230e article EN Journal of Materials Chemistry A 2014-06-06

Herbaspirillum species are typically isolated from plants and known for their role in crop nitrogen fixation. Recently, they have been found to colonize humans cause infections. This study aimed identify characterize two huttiense strains (CLJ01 CLJ02) the blood of a uremic patient, with focus on evaluating pathogenicity antibiotic efficacy. The were identified using VITEK2 system, Matrix-Assisted Laser Desorption/Ionization Time-of-Flight Mass Spectrometry , 16S rRNA gene sequencing,...

10.1093/lambio/ovaf012 article EN Letters in Applied Microbiology 2025-02-01

In this paper, we propose an enhanced efficiency 4H-SiC U-shaped trench-gate MOSFET (UMOSFET) structure. The proposed device structure takes advantage of a p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -polySi/SiC shielded region to reduce the on-state specific resistance. We show that heterojunction diode formed by -polySi and n-drift regions improves body effect, thereby, reduces reverse recovery charge. Further, illustrate through...

10.1109/ted.2017.2723502 article EN IEEE Transactions on Electron Devices 2017-07-14

A high-frequency analysis of Cu-carbon nanotube (CNT) composite through-silicon vias (TSVs) is conducted. The electrical modeling the Cu-CNT TSVs performed, with effective complex conductivity formulated for accurate characterization kinetic inductance. It shown that, after codepositing CNT Cu, can be improved and influence inductance variation suppressed in comparison TSVs. On other hand, exhibit little compromise performance yet much enhanced reliability by to Cu counterpart. That is,...

10.1109/tnano.2016.2547999 article EN IEEE Transactions on Nanotechnology 2016-03-29

This article proposes a novel differential through-silicon via (D-TSV) structure, which is filled with vertically aligned carbon nanotube (VACNT) array. Two metal pads are deposited on the sides of surface proposed D-TSV to form signal transmission paths. The equivalent circuit model established for D-TSV, frequency-dependent impedance extracted using partial-element equivalent-circuit (PEEC) method. By virtue model, electrical performance investigated, some design guidance presented.

10.1109/tnano.2020.3004825 article EN IEEE Transactions on Nanotechnology 2020-01-01

Sortilin-related receptor 1 (SorL1) deficiency is a genetic predisposition to familial Alzheimer's disease (AD), but its pathology poorly understood. In SorL1-null rats, disorder of the global endosome-lysosome network (ELN) found in hippocampal neurons. Deletion amyloid precursor protein (APP) rats could not completely rescue neuronal abnormalities ELN hippocampus and impairment spatial memory young rats. These vivo observations indicated that APP one cargoes SorL1 regulation ELN, which...

10.1002/advs.202407709 article EN cc-by Advanced Science 2024-09-03

A novel lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with a buried N-type layer (BNL) in partial silicon-on-insulator (PSOI) is introduced to achieve breakdown voltage (BV) above 600 V and reduce on-resistance ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> ). The BNL induces enhanced into the oxide layer, which results higher BV. doping...

10.1109/ted.2012.2185498 article EN IEEE Transactions on Electron Devices 2012-02-10

A high-voltage lateral double-diffused MOSFET with N-island (NIS) and step-doped drift (SDD) region in partial silicon-on-insulator (PSOI) technology is proposed. In the direction, SDD NIS on buried oxide layer (BOX) introduce two additional electric field peaks, which can improve surface distribution breakdown voltage (BV). vertical due to highly doped NIS, a higher induced into BOX layer, achieve BV. As consequence, BV enhanced significantly. Moreover, larger doping concentration provide...

10.1109/ted.2015.2487345 article EN IEEE Transactions on Electron Devices 2015-10-20

Optimal repeater designs are performed for Cu and carbon nanotube (CNT)-based nanointerconnects to reduce the delay power dissipation. The effects of inductance metal-CNT contact resistance treated appropriately. In this paper, circuit parameters calculated analytically, while they can be extracted experimentally a specific foundry at technology node. particle swarm optimization (PSO) technique is employed numerically calculate optimal size number repeaters in CNT-based nanointerconnects....

10.1109/access.2019.2893960 article EN cc-by-nc-nd IEEE Access 2019-01-01

A compact frequency selective surface (FSS) for 5G applications has been designed based on 2.5-dimensional Jerusalem cross. The proposed element consists of two main parts: the successive segments metal traces placed alternately surfaces substrate and vertical vias connecting traces. Compared with previous published two-dimensional miniaturized elements, transmission curves indicate a significant size reduction (1/26 wavelengths at resonant frequency) exhibit good angular polarization...

10.1155/2018/3485208 article EN cc-by Wireless Communications and Mobile Computing 2018-01-01

A self-sustained dielectric constant (i.e., permittivity) measurement system for liquid is proposed. tunable substrate integrated waveguide (SIW) resonator exploited to form a feedback-type voltage controlled oscillator (VCO) that further embedded into phase locked loop (PLL)-based frequency synthesizer. The SIW acts as the feedback element of VCO. When exposed liquid, its response and corresponding VCO oscillation change accordingly because electromagnetic field perturbation. Due presence...

10.1109/access.2018.2857514 article EN cc-by-nc-nd IEEE Access 2018-01-01

This paper presents a high-frequency equivalent circuit model for on-chip coupled carbon nanotube (CNT) interconnects up to 100 GHz. By simplifying the model, S-parameters of can be acquired and validated by comparing with full-wave electromagnetic simulations. virtue effective complex conductivity, behaviors CNT are captured studied, impacts kinetic inductance treated appropriately.

10.1109/tcpmt.2016.2580592 article EN IEEE Transactions on Components Packaging and Manufacturing Technology 2016-06-30
Coming Soon ...