High-efficiency electromagnetic (EM) functional materials are the core building block of high-performance EM absorbers and devices, they indispensable in various fields ranging from industrial manufacture to daily life, or even national defense security space exploration. Searching for high-efficiency realizing devices remain great challenges. Herein, a simple solution-process is developed rapidly grow gram-scale organic-inorganic (MAPbX3 , X = Cl, Br, I) perovskite microcrystals. They...

A step-wise template process is developed for the fabrication of high-aspect-ratio, hierarchical TiO2 nanotube arrays directly on transparent conductive oxides. Significantly enhanced dye loading capability and photoelectrochemical performances are demonstrated in dye-sensitized solar cells with adoption a nanocrystalline shell. Detailed facts importance to specialist readers published as "Supporting Information". Such documents peer-reviewed, but not copy-edited or typeset. They made...

The CaF2 nano-structures grown by thermal vapor deposition are presented. Significant responsivity improvement (>200%) of mid-infrared PbSe detectors incorporating a 200 nm nano-structured coating was observed. detector provides detectivity 4.2 × 1010 cm · Hz1/2/W at 3.8 μm, which outperforms all the reported un-cooled detectors. Structural investigations show that is constructed tapered-shape nanostructures, creates gradient refractive-index profile. Analogy to moth-eye antireflective...

n-CdS/p-PbSe heterojunction is investigated. A thin CdS film deposited by chemical bath deposition on top of epitaxial PbSe molecular beam epitaxy Silicon. Current-voltage measurements demonstrate very good junction characteristics with rectifying ratio ∼178 and ideality factor 1.79 at 300 K. Detectors made such structure exhibit mid-infrared spectral photoresponse room temperature. The peak responsivity Rλ specific detectivity D* are 0.055 A/W 5.482 × 108 cm·Hz1/2/W λ = 4.7 μm under...

We used Ti meshes for both the photoanodes and counter electrodes of dye-sensitized solar cells (DSSCs) to improve flexibility conductivity electrodes. These mesh type showed good transparency high bendability when subjected an external force. demonstrated advantages using such compared traditional transparent conducting oxide based back side illuminated DSSCs, as low sheet resistance, elevated photo-induced current enhanced sunlight utilization. Nanotube layers different thicknesses were...

Perovskites have prevailed in the field of photovoltaics over past several years thanks to their outstanding optoelectronic properties. Compared three-dimensional (3D) perovskites, emerging two-dimensional (2D) Ruddlesden–Popper (RP) phase perovskites demonstrated superior stability due hydrophobic organic capping ligands, which can protect inside inorganic octahedrons against moisture. Meanwhile, RP broaden family 2D materials, enriching building blocks for van der Waals heterostructures....

The low performance of middle infrared (MIR) PbSe detectors fabricated from vapor phase deposition (VPD) technology restricts the rapid development VPD and detector commercialization. A modified process was proposed to duplicate microstructural features high-performance CBD-PbSe for a breakthrough in technology. peak detectivity D* 1.6 × 1010 cm Hz1/2 W-1 at 298 K achieved under optimized sensitization, approaching best detectors. Through contrasting various microstructures obtained diverse...

PbSe films deposited by chemical bath deposition (CBD) technology were sensitized in various atmospheres to distinguish the role of iodine and oxygen sensitization process. No infrared (IR) photo response was observed samples pure oxygen, showing O element cannot trigger PbSe. However, a high detectivity 1 × 1010 achieved sample N2/I2 atmosphere, which demonstrates is key for inducing an IR response. The analyzed from morphological evolution, phase composition transformation resistance...

A mid-wave infrared (MWIR) uncooled PbSe-QDs/CdS p-n heterojunction photodiode has been fabricated using a wet-chemical synthesis route. This offers low-cost alternative to traditional monocrystalline photodiodes relying on molecular beam epitaxy (MBE) technology. It was demonstrated that the post-annealing is critical tailor photoresponse wavelength and improve performance of photodiodes. After annealing at 673 K in air for 0.5 h, ligand-free exhibits MWIR spectral with cutoff 4.2 μm room...

In this report, upstanding and nanoporous hexagonal TiO2 nanosheet arrays were achieved via using kassite [CaTi2O4(OH)2] as an intermediate. The process developed involved a nanorod-derived synthesis of transformation the to TiO2. To best our knowledge, is first successful attempt grow ordered arrays. as-obtained nanosheets showed single-crystalline nature with their c-axis parallel substrate. A stepwise study growth interesting was demonstrated. Upon hydrothermal treatment diluted HNO3...

A high-temperature chloride passivation (HTCP) process could effectively improve the photo-electrical properties of PbSe epitaxial films, demonstrating potential applications in low-SWaP infrared photovoltaic detectors.

Being a promising candidate infrared transparent and conductive coatings in the 1–12 μm, practicality of CdSe:In was verified by building uncooled PbSe/CdSe photovoltaic detectors with 1.0 × 10 9 cm Hz 1/2 W −1 under blackbody radiation.

ZnO nanowires (NWs), grown by hydrothermal and vapor phase transport (VPT) methods, were employed as the channel layers to fabricate single nanowire Field Effect Transistors (NWFETs) with a p + -silicon bottom gate. The FET employing NWs shows n-type depletion mode field mobility of 18.27 cm 2 /V⋅s, an on/off ratio 10 6 , threshold voltage -48.5 V. In comparison, device using VPT operates in effect 36.94 drain current 5 -14 reason for difference two methods was discussed this paper.

This paper provides a theoretical study and calculation of the specific detectivity-D* limit photovoltaic (PV) mid-wave infrared (MWIR) PbSe n+-p junction detectors operating at both room temperature TE-cooled temperature. For typical p-type doping concentration 2 × 1017 cm-3 with high quantum efficiency, D* limits detector are shown to be 2.8 1010 HZ1/2/W 3.7 300 K 240 K, cut-off wavelength 4.5 μm 5.0 μm, respectively. It is almost one magnitude higher than current practical MWIR PV...

Numerical analysis of a CdS/PbSe room-temperature heterojunction photovoltaic detector is discussed as to provide guidelines for practical improvement, based on the previous experimental exploration [1]. In our experiment work, polycrystalline CdS film was prepared in hydro-chemical method top single crystalline PbSe grown by molecular beam epitaxy method. The preliminary results demonstrated 5.48×10⁸ Jones peak detectivity at λ=4.7μm under zero-bias. However,...

We studied the effect of nano-tubular anodic TiO2 buffer layers on hydroxyapatite (HA) coating. The pulsed laser deposition (PLD) method was used to deposit HA a well arranged (NT-ATO) layer prepared by an electrochemical anodization technique. surface morphology and chemical composition coatings were characterized using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), diffraction (XRD), contact angle measurement. found that crystalline show porous morphologies...

Abstract To comply with SWaP3 specifications in infrared detectors, a novel uncooled mid-wavelength avalanche photodetector (MWIR-APD) architecture based on PbSe/Ge heterojunction was proposed. A maximum high gain of 40.8 achieved, which is comparable cooled MWIR-APDs, including HgCdTe, and Type Ⅱ superlattices (T2SLs). The theoretical simulation shows that it the significant difference permittivity between PbSe Ge results sufficient electric field contrast absorption multiplication layers,...

The structure, morphology, and properties of ZnO films were examined in relation to an annealed sapphire substrate prepared via pulsed laser deposition. annealing effects the on studied X-ray diffraction (XRD), atomic-force microscopy (AFM), photoluminescence (PL) measurements. XRD patterns PL spectra results showed that optical quality was significantly affected by temperature substrate. optimum 1400 degrees C. Atomically-flat-surface high-density atomic steps formed after treatment, which...

In this work, the study of influences lifetime, doping concentration and absorption layer thickness to resistant- area product (R0A) quantum efficiency Pb1-xSnxSe photovoltaic detector are presented. Three fundamental current mechanisms including diffusion, generation-recombination, tunneling models considered. Using optimal parameters, calculated detectivity (D*) is over 1012 cm Hz1/2/W.

Abstract Mid- and long-wavelength IR photodetectors incorporating narrow-bandgap semiconductors often face the challenge of large RT dark current, limiting their applications in military civilian use. Herein, a novel pBn + barrier detector architecture based on lead selenide/indium selenide structure is proposed to significantly suppress so that uncooled mid-wave (MWIR) with high performance can be achieved. The finite element analysis demonstrates reduced current down 55 mA cm −2 under −0.1...