Satoshi Sugimoto

ORCID: 0000-0003-0401-0030
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About
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Research Areas
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Ion-surface interactions and analysis
  • Thin-Film Transistor Technologies
  • Magnetic confinement fusion research
  • Plasma Diagnostics and Applications
  • Metal and Thin Film Mechanics
  • Laser-Plasma Interactions and Diagnostics
  • Diamond and Carbon-based Materials Research
  • Stroke Rehabilitation and Recovery
  • Copper Interconnects and Reliability
  • Cardiac Structural Anomalies and Repair
  • Ionosphere and magnetosphere dynamics
  • Gastric Cancer Management and Outcomes
  • Laser-induced spectroscopy and plasma
  • Colorectal Cancer Treatments and Studies
  • Fusion materials and technologies
  • Spatial Neglect and Hemispheric Dysfunction
  • Cardiac and Coronary Surgery Techniques
  • Multiple and Secondary Primary Cancers
  • Congenital Heart Disease Studies
  • Botulinum Toxin and Related Neurological Disorders
  • Bone Tissue Engineering Materials
  • Plasma Applications and Diagnostics
  • Surface Roughness and Optical Measurements

Osaka University
2014-2023

Obihiro Kosei General Hospital
2022-2023

Nagasaki University
2014-2021

Hokkaido University Hospital
2021

Tokyo International University
2021

University of Tokyo Health Sciences
2016-2020

Hokkaido University
2020

National Institute of Advanced Industrial Science and Technology
2005-2019

Nara Women's University
2019

Nagaoka University of Technology
2017-2019

There are no prior reports of totally endoscopic minimally invasive cardiac surgery for combined ventricular septal defect closure and aortic valve replacement. We utilized a periareolar incision as the main access, inserting cardioplegia line, vent tube cross-clamp entirely through this incision. Only three ports (main incision, camera port left-hand port) were used. A three-dimensional endoscope facilitated precise techniques. The type I was approached closed from side using Gore-Tex...

10.1510/mmcts.2025.012 article EN Multimedia Manual of Cardio-Thoracic Surgery 2025-03-10

A translation experiment of field-reversed configuration (FRC) plasma is performed on the FIX machine [Shiokawa and Goto, Phys. Fluids B 5, 534 (1993)]. The translated FRC bounces between magnetic mirror fields at both ends a confinement region. loses some its axial kinetic energy when it reflected by field, eventually settles down in In this reflection process, temperature rises significantly. Such rethermalization has been observed OCT-L1 experiments [Ito et al., 30, 168 (1987)], but...

10.1063/1.871090 article EN Physics of Plasmas 1995-01-01

Two digital image processing methods, capable of composing microscope images with increased depth focus and mapping 3-D distribution on the altitude or thick object, are presented: one uses pseudocolor display focal-series images, other considers local variance each images. Experimental results demonstrate usefulness both methods. The high-speed system developed by authors plays an important role in

10.1364/ao.24.002076 article EN Applied Optics 1985-07-15

Tempeh is a traditional Indonesian soybean-fermented food produced by filamentous fungi, Rhizopus sp. and Fusarium We isolated sequenced the genomic gene cDNA clone encoding novel protease (FP) from BLB. The was 856 bp in length contained two introns. An encoded protein of 250 amino acids. predicted acid sequence FP showed highest homology, 76%, with that trypsin oxysporum. hydrolysis activity toward synthetic peptide higher than any other tested, including Nattokinases. Furthermore,...

10.1271/bbb.70153 article EN Bioscience Biotechnology and Biochemistry 2007-09-23

We have proposed an experimental methodology which makes it possible to deposit silicon carbide (SiC) films on Si substrates with a low-energy mass-selected ion beam system using hexamethyldisilane (HMD) as gas source. In this study, one of the fragment ions produced from HMD, SiCH4+, was mass-selected. The energy approximately 100 eV. Then, SiCH4+ were irradiated Si(100) substrate. When temperature substrate set at 800 °C during irradiation, X-ray diffraction and Raman spectroscopy...

10.1063/1.4943497 article EN Journal of Applied Physics 2016-03-10

Fragment ions produced from dimethylsilane with a hot tungsten wire (i.e., catalyzer) in catalytic chemical vapor deposition (Cat-CVD, which is also known as CVD) processes are identified use of low-energy mass analyzed ion beam system. The analysis shows that dominant fragment H 1 + , 2 CH 3 Si SiH SiCH 4 SiC and 7 . energy distributions these measured. It found the spreads narrow no energetic produced, suggesting unlikely to cause any significant damage deposited films actual Cat-CVD...

10.1143/jjap.45.8204 article EN Japanese Journal of Applied Physics 2006-10-01

Proteasome assembling chaperone (PAC) 3 acts as a homodimer and plays an important role in proteasome formation. We screened JBIR-22 (1) inhibitor for protein−protein interaction (PPI) of PAC3 from our natural product library using protein fragment complementation assay (PCA) with monomeric Kusabira-Green fluorescent (mKG) vitro found that 1 exhibited potent inhibitory activity against homodimerization. Compound showed long-term cytotoxicity the human cervical carcinoma cell line, HeLa. This...

10.1021/np900788e article EN Journal of Natural Products 2010-02-24

Abstract Sputtering yields and surface modification of poly(methyl methacrylate) (PMMA) by mono-energetic ion beams and/or vacuum ultraviolet (VUV) light are studied with the use a low-energy mass-selected beam system. PMMA Ar + or <?CDATA ${\rm CF}_3^+$ ?> obtained as functions incident energy below 500 eV. It is found that due to incidence limited region near film surface, whereas seen in relatively deeper film, where partially carbonized diamond-like carbon (DLC) formed. Under conditions...

10.1088/0022-3727/45/50/505201 article EN Journal of Physics D Applied Physics 2012-11-19

Surface modification of poly(methyl methacrylate) (PMMA) films by hydrogen-plasma exposure has been studied in the light sputtering resistance polymer-based materials plasma etching processes. measurements PMMA were performed with X-ray photoelectron spectroscopy, Fourier transform infrared Raman and spectroscopic ellipsometry. It found that oxygen atoms are preferentially removed from surface when a film is subjected to exposure, depth being about 40 nm case we examined. Hydrogen-plasma...

10.7567/jjap.52.090201 article EN Japanese Journal of Applied Physics 2013-08-06

A novel, Gram-stain-positive bacterial strain, Mer 29717(T), was isolated from the branchia (gills) of a Japanese codling, Physiculus japonicus, collected bottom waters Suruga Bay in Shizuoka, Japan. Phylogenetic analysis based on 16S rRNA gene sequences indicated that this strain represents distinct lineage within family Dermacoccaceae and related most closely to members genera Demetria Yimella. It shared highest sequence similarity (95.1 %) with Yimella lutea YIM 45900(T). Strain 29717(T)...

10.1099/ijs.0.023648-0 article EN INTERNATIONAL JOURNAL OF SYSTEMATIC AND EVOLUTIONARY MICROBIOLOGY 2010-06-21

We found that the atomic-concentration-ratio of carbon to silicon (C/Si ratio) in carbide (SiC) films formed by thermal chemical vapor deposition (CVD) was much greater than 1 when source gas for CVD dimethylsilane (DMS). Thus, we tried change carbon-inclusion levels film injecting some ion beams into a depositing SiC during process with DMS. Three beams, i.e., Si+, SiCH5+, or C+ ions were injected films. The energy and 110 eV. temperature substrate 800 °C. X-ray diffraction deposited showed...

10.1016/j.heliyon.2023.e19002 article EN cc-by Heliyon 2023-08-01

We propose an experimental methodology for producing silicon carbide (SiC) films on Si substrates using ion beam induced chemical vapor deposition (IBICVD) technique with methylsilane (SiH3CH3) as a gas source. Both (1.2 sccm) and Ar (100 eV, 5μA) were simultaneously introduced onto Si(100) substrates. Temperatures of set at 600, 700, or 800°C. A SiC thin film was formed by the simultaneous introduction ions substrate when temperature 600°C. On other hand, in cases 700 800°C, alone rates...

10.1380/ejssnt.2015.174 article EN cc-by e-Journal of Surface Science and Nanotechnology 2015-01-01

Experiments on additional heating by neutral beam injection and application of a low frequency wave to plasma with an extremely high averaged beta value about 90% - field reversed configuration (FRC) are carried out using the FRC Injection Experiment (FIX) apparatus. These experiments made possible translating produced in formation region theta pinch confinement order secure better accessibility facilities control density. By determining appropriate geometry mirror ratio region, it became...

10.1088/0029-5515/41/5/316 article EN Nuclear Fusion 2001-05-01

This study was conducted to determine whether the simultaneous injections of Ar+ ions and tetraethyl orthosilicate (TEOS) a substrate are able fabricate film on substrate. The ion energy 100 eV. After injections, we found deposited Following analyses with X-ray photoelectron spectroscopy Fourier transform infrared spectroscopy, it that silicon dioxide (SiO2). We conclude low-energy ion-beam-induced deposition method using TEOS is useful for growth SiO2 films.

10.1016/j.heliyon.2023.e14643 article EN cc-by Heliyon 2023-03-17

Ionic fragmentation in catalytic chemical vapor deposition (Cat-CVD, which is also known as hot wire CVD) processes, studied with a use of low-energy mass analyzed ion beam system, the and energy distributions fragment ions produced from methylsilane gas chamber tungsten (i.e., catalyzer) are measured. The analysis shows that dominant typically H1+, H2+, H3+, CH3+, SiH+, SiCH4+. It found these narrow no energetic produced. This indicates that, actual Cat-CVD unlikely to cause any significant...

10.1143/jjap.45.1813 article EN Japanese Journal of Applied Physics 2006-03-01

Methylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using low-energy mass-selected beam system. Based on mass-energy analyzer measurements, these determined to be H+, H2+, H3+, CH3+, Si+, and SiCH5+. The SiCH5+ selected injected into Si(111) substrate at 750 °C. energy was 40 eV. This injection led the formation of silicon carbide film Si substrate. An analysis this indicates that type deposition method can efficiently form film.

10.1063/1.5116614 article EN cc-by AIP Advances 2019-09-01

[Purpose] Pushing behavior is classically described as a disorder of body orientation in the coronal plane. Most interventions for pushing have focused on correcting deviation vertical perception. However, seems to involve erroneous movements associated with excessive motor output by non-paretic limbs and trunk. The present study aimed inhibit muscular hyper-activity placing trunk prone position. [Subjects Methods] subjects were 3 acute stroke patients severe behavior. consisted following...

10.1589/jpts.28.2690 article EN Journal of Physical Therapy Science 2016-01-01

We have been attempting to produce low-energy ion beams from fragments produced through the decomposition of hexamethyldisilane (HMD) for silicon carbide (SiC) film formations. mass-selected SiC2H6+ and SiC3H9+ ions HMD, finally beams. The energy was approximately 100 eV. Then, were irradiated Si(100) substrates. temperature Si substrate 800°C during irradiation. X-ray diffraction Raman spectroscopy substrates obtained following irradiation demonstrated occurrence 3C-SiC deposition. On other...

10.1063/1.4972206 article EN cc-by AIP Advances 2016-12-01

Abstract Regeneration of large bone defects caused by trauma or tumor resection remains one the biggest challenges in orthopedic surgery. Because limited availability autograft material, use artificial is prevalent; however, primary role currently available restricted to acting as a graft extender owing lack osteogenic ability. To explore whether surface modification might enhance functionality, this study we applied low-pressure plasma technology next-generation treatment and processing...

10.1038/s41598-021-97460-8 article EN cc-by Scientific Reports 2021-09-09
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