A5011258801- GaN-based semiconductor devices and materials
- Radio Frequency Integrated Circuit Design
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Ga2O3 and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Acoustic Wave Resonator Technologies
- ZnO doping and properties
- Integrated Circuits and Semiconductor Failure Analysis
- University-Industry-Government Innovation Models
- Microwave Engineering and Waveguides
- Glaucoma and retinal disorders
- Microwave and Dielectric Measurement Techniques
- Retinal Imaging and Analysis
- Nanowire Synthesis and Applications
- Quantum and electron transport phenomena
- Economic and Technological Innovation
- Retinal Diseases and Treatments
- Quantum Information and Cryptography
- Semiconductor Lasers and Optical Devices
- 3D IC and TSV technologies
- Photonic and Optical Devices
IMEC
2020-2024
Vrije Universiteit Brussel
2020-2023
Misr International University
2019
We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow 200mm Si <111> wafers. Optimizations gate metal stack, contact resistance and length scaling to 110nm result in devices peak g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> 430 mS/mm an f xmlns:xlink="http://www.w3.org/1999/xlink">MAX</inf> 135 GHz. While wafer warp was found increase slightly through processing levels 1µm...
Trapping in an impurity (e.g. Fe, C) doped back barrier (BB) causes pronounced on-resistance (R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> ) dispersion of GaN HEMTs. We demonstrate that the BB trapping is alleviated by increasing 2DEG density N xmlns:xlink="http://www.w3.org/1999/xlink">sh</inf> channel (~50% increased results ~30% less $\Delta \mathrm{R} _{on})$ and inserting additional intrinsic AlGaN (100 nm with ~50% _{on})$....
In this work, we will address the opportunities of a hybrid III-V/CMOS technology for next generation wireless communication, beyond 5G, moving to operating frequencies above 100GHz. Challenges related III-V upscaling and CMOS co-integration using 3D technologies be discussed.
This work investigates scaling of the GaN channel thickness on top a carbon-doped buffer (cGaN) grown 200mm Si substrates. Device performance tradeoffs are analyzed in terms DC, RF, reliability and thermal behavior. A thinner improves DIBL, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{off},V_{th}$</tex> roll-off degrades xmlns:xlink="http://www.w3.org/1999/xlink">$f_{T},f_{\max}$</tex> , PAE, Pout, charge trapping conductance...
To enable CMOS-compatible GaN HEMTs for the next generation of communication systems (5G and beyond), a low gate resistance is great importance since it directly affects RF power gain f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> transistor. In this article, impact various gate-metal stacks on performance devices studied. The optimized Ti-free process leads to enhancement up ~50% scaled down 0.32-μm lengths. T-shaped modeled from...
The world is more than ever relying on connectivity in our daily life as well professional life. With 5G being rolled out, the industry looking already at next generation of mobile communication to bring even higher speeds and connections previous generations. But with we are an inflection point where it not only about data rates connections, but connecting different kind devices new ways humans machines interact each other. frequencies, low latency reliability requirements will put a lot...
We demonstrate GaN-on-Si HEMTs capable of meeting mm-wave requirements. compare the large-signal performance for thin barrier AlGaN/GaN and InAlN/GaN-based with gate lengths downscaled to 70nm at 28GHz using passive load-pull characterisation. The 8x25µm InAlN/GaN devices a 100nm length achieve P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SAT</inf> 2.8W/mm corresponding PAE 50% 10V operation in class AB, thereby showing their suitability...
We report high performance AlN/GaN MISHEMTs grown using MOCVD on 200 mm Si substrates with in-situ silicon nitride (Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> ) as the common gate insulator and access region passivation layer. The RF small large-signal trade-offs of AIN thickness scaling are systematically examined. Ultra-thin barrier dielectric stacks (AIN < 2.5 nm, ≤ 2 nm)...
Glaucoma is a silent disease that, left untreated, causes severe visual impairments which can progress to irreversible blindness. Fortunately, early detection and proper treatment control the development of glaucoma in turn limit further progression associated impairments. However, periodic manual diagnosis necessary for its would require abundancy experts, besides being invasive, expensive, time consuming. Computer aided (CAD) thus serve as game changer by bringing clinician level an...
We examine the influence of scaling GaN channel thickness from 100nm to 35nm on RF performance for HEMTs Si with a cGaN back-barrier gate lengths ranging 70nm 190nm. Thinner channels notably improve short effects. However, there is degradation in on-state associated an increase dispersion. These trade-offs translate ~33%, ~20% decline <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$f_{\mathrm{T}}, f_{\text{MAX}}$</tex> respectively, devices....
Abstract Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize T-shape gates due to their large gate-line cross-sectional area and subsequent f MAX increase. In this paper, we report the linearity trade-offs associated with varying T-gate geometries of AlGaN/GaN HEMTs on Si, specifically gate extensions which serve as field plates impact large-signal performance. Small-signal characterization modeling, in addition TCAD, provide initial guidelines for...
We investigate the effect of varying gate-to-drain spacing and gate field-plate on device linearity GaN HEMTs Si for 0.11μm, 0.15μm, 0.19μm lengths. The gain compression, phase distortion, harmonic distortion metrics are measured using a nonlinear characterisation setup calibrated at 6GHz up to third harmonic. acquired nonlinearity correlated with extrinsic parasitics extracted from S-parameter measurements. observe that excessive length scaling down 0.05μm lowers total expense in Class AB...
Downscaling CMOS technology has allowed the integration of high-speed transceivers on silicon chips, but high-power amplifiers rely III-V technologies to deliver power and efficiency levels required by modern radios. In this work, we explore two routes enable fabrication compound semiconductor devices a large-scale manufacturable Si platform. first route, report Al(Ga,In)N HEMTs, MISHEMTs MOSFETs integrated 200 mm wafers using Au-free processing in standard tools. second demonstrate...
A review of the modelling requirements to establish a Design-Technology Co-Optimization loop for mmWave Front-End Modules is presented. The example GaN/Si technology detailed, and recent modeling developments are explained
Thin channel GaN HEMTs intended for mm-wave operation suffer from increased on-resistance (R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> ) dispersion, limiting their large-signal performance. This work establishes a composite AlGaN/cGaN back barrier (BB) as plausible solution to reduce the trapping in BB while improving 2DEG confinement. Large-signal characterisation at 28GHz, using source- and load-pull, indicates significant...
Compound semiconductor devices have always intrigued the industry due to their high intrinsic mobilities and heterostructure engineering enabled by those materials. While CMOS has been vehicle pushing ever smaller devices, better performance of course reduced cost, unique properties compound are finding renewed interest in an era where increasing amount data is being sent around, stored analyzed. several applications like photonics, high-power electronics image sensors also benefit from...
The growing interest for 5G radios pushes technology development towards low-cost and high-performance solutions operating at microwave mm-wave. Downscaling CMOS has allowed the integration of high-speed transceivers on silicon chips, but high-power amplifiers rely III-V technologies to deliver power efficiency levels required by modern radios. In this work, we motivate non-Si meet requirements, explore two routes enable fabrication compound semiconductor devices a large-scale manufacturable...