A5101661233- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Data Storage Technologies
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- DNA and Nucleic Acid Chemistry
- DNA Repair Mechanisms
- Advanced Memory and Neural Computing
- HIV/AIDS drug development and treatment
- Thin-Film Transistor Technologies
- Conducting polymers and applications
- Electrokinetic Soil Remediation Techniques
- HVDC Systems and Fault Protection
- Bauxite Residue and Utilization
- Amino Acid Enzymes and Metabolism
- High-Voltage Power Transmission Systems
- Power System Reliability and Maintenance
- Boron and Carbon Nanomaterials Research
- Cancer Research and Treatments
- Multilevel Inverters and Converters
- Parallel Computing and Optimization Techniques
- Magnetic properties of thin films
- Silicon and Solar Cell Technologies
- Green IT and Sustainability
- Diamond and Carbon-based Materials Research
University of Leicester
2024
North China University of Water Resources and Electric Power
2023
University of Chinese Academy of Sciences
2018-2022
Institute of Microelectronics
2018-2019
Chinese Academy of Sciences
2018-2019
Case Western Reserve University
2019
Cornell University
2019
NXP (Belgium)
2013
Newcastle University
2006-2008
Princeton University
2005
The application of large amounts red mud in the field building materials is one main ways to reuse this material, but high alkali content limits its application. In paper, washable alkali, removable and lattice contents Bayer were studied, occurrence states potassium sodium studied using XRD, IR, XPS, NMR. On basis, removal mechanism for was analyzed. results showed that Na mainly deposited shelf silicon voids hydroxy sodalite (Na8(AlSiO4)6(OH)2(H2O)2) form Si-O-Na or Al-O-Na. K...
Erase cycling induced Vt shift of top select gate transistor (TSG) and its physical mechanism are studied in 3D NAND flash memory. It is found that the distribution TSG shifts higher during memory cells erase cycling. Furthermore, can recover after removal stress. A model trap generation by hot holes proposed for above observations. considered generated high channel potential gradient break ≡Si-H bonds at poly-Si grain boundary poly-Si/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
This work investigates gate leakage mechanisms in advanced strained Si∕SiGe metal-oxide-semiconductor field-effect transistor (MOSFET) devices. The impact of virtual substrate Ge content, epitaxial material quality, layer structure, and device processing on oxide characteristics are analyzed detail. In state the art MOSFETs, oxides only a few nanometers thick. order to minimize power consumption, currents through must be controlled. However, modifications energy band diffusion due high...
Three electrical techniques (pulsed-gate, AC-conductance and sense-diode) for temperature evaluation in power MOS transistors have been experimentally compared on the same device. The device under test is a silicon-on-insulator (SOI) laterally-diffused MOSFET (LDMOS) design with embedded sense-diodes center at edge of providing local information. On-wafer measurements performed thermal chuck range 25-200°C to extract self-heating information predict junction different biasing conditions....
Although computing hardware has become increasingly more powerful, computer responsiveness is still an important issue due to multi-tasking and software bloat. We propose a holistic approach for improving through user focus-aware resource management CPU, memory, disk I/O, graphics processing. Previous approaches only address one or two of these problems simultaneously. To the best our knowledge, work first I/O scheduling better responsiveness. It also offers solutions other problems. exploit...
This work presents a detailed study of ultrathin gate oxide integrity in strained Si metal silicon field effect transistors (MOSFETs) fabricated on thin virtual substrates aimed at reducing device self-heating. The quality and reliability the devices are compared to those simultaneously processed control conventional thick substrate that have same Ge content (20%), channel thickness, strain. offer mobility enhancement as (∼100% universal data) effective Up 90% improvement leakage current is...
Cycling induced Vt shift of top select gate transistor (TSG) and the physical mechanism is studied in three dimensional (3D) NAND flash memory. It found that distribution TSG shifts higher during memory cells Program/Erase (P/E) cycling. The can recover after removal cycling stress. A model hot holes trap generation proposed for above observations. considered generated by high channel potential gradient erase break ≡Si-H bonds at poly-Si grain boundary poly-Si/SiO <sub...
DNA damage can occur naturally or through environmental factors, leading to mutations in replication and genomic instability cells. Normally, natural d-nucleotides were selected by polymerases. The template l-thymidine (l-T) has been shown be bypassed several types of However, fidelity nucleotide incorporation opposite vivo remains unknown. Here, we constructed plasmids containing a restriction enzyme (PstI) recognition site which the l-T lesion was site-specifically located within PstI...
Silicon on insulator (SOI) technology for power devices offers many distinct advantages compared to bulk Si technology, however in high applications the buried oxide (BOX) layer can impede heat transport towards backside of silicon substrate. This paper demonstrates integration sinks SOI improve thermal performance. The are formed by polysilicon plugs through BOX that significantly reduce resistance and thus increase safe operating limits technology. effectiveness integrated was evaluated...
Charge trapping memory (CTM) endurance has been widely investigated in recent years. Most studies are focused on array cell Vt instabilities, which is originated from charge trapping/detrapping tunnel oxide and interface traps. Our previous works demonstrate erase only cycling induced TSG shift 3D NAND flash. In this work, it found that the VT temperature dependent. under low obviously worse than room high temperature. TCAD simulation shows hot carrier by channel potential gradient more...
Abstract l -nucleosides were the most important antiviral lead compounds because they can inhibit viral DNA polymerase and synthesis of many viruses, whereas may to mutations in replication cause genomic instability. In this study, we reported replicative bypass -deoxynucleosides recombinant by restriction enzyme–mediated assays examine their impact on vitro E. coli cells. The results showed that a template -dC inhibited Taq reaction, it be bypassed Vent (exo - ) as well cell replication,...
This work investigates gate leakage mechanisms in advanced strained Si/SiGe MOSFET devices. The impact of virtual substrate Ge content, epitaxial material quality, layer structure and device processing on oxide characteristics are analysed detail. We show that at high electric fields where is dominated by F-N tunneling, tensile Si MOSFETs exhibit lower levels compared with bulk However for operating regimes Poole-Frenkel (P-F) emissions contribute to increase increasing content. shown...
Abstract not Available.
Abstract l-nucleosides were the most important antiviral lead compounds because they can inhibit viral DNA polymerase and synthesis of many viruses, whereas may to mutations in replication cause genomic instability. In this study, we reported replicative bypass l-deoxynucleosides recombinant by restriction enzyme–mediated assays examine their impact on vitro E. coli cells. The results showed that a template l-dC inhibited Taq reaction, it be bypassed Vent (exo − ) as well cell replication,...
The total dose response characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers were measured as a function accumulative bias conditions during irradiation. stretch-out technique was used to separate the threshold-voltage shifts PMOS NMOS into due interface traps trapped-oxide charge. leakage currents NMOS/SIMOX increased quickly after irradiation because parasitic back-channel MOS structure. While devices suffered no significant effect thick top silicon layers.
ADVERTISEMENT RETURN TO ISSUEPREVAddition/CorrectionNEXTORIGINAL ARTICLEThis notice is a correctionCorrection to Replication of DNA Containing Mirror-Image Thymidine in E. coli CellsYuhe KanYuhe KanMore by Yuhe Kan, Lu ChenLu ChenMore Chen, Dao LinDao LinMore Lin, Xinya BuXinya BuMore Bu, Mengwu MoMengwu MoMore Mo, Liang YanLiang YanMore Yan, Zhenjun YangZhenjun YangMore Yanghttp://orcid.org/0000-0001-7614-595X, Longfei Yuan*Longfei YuanMore Yuan, Li Wu*Li WuMore...
High-voltage direct current (HVDC) transmission systems have developed rapidly in recent years. Continuous commutation failure is a serious malfunction HVDC systems, which results the blockage of converter station. Though inevitable when AC side faults occur, continuous can be prevented by control methods based on sensitive and accurate forecast. However, are complex nonlinear occurs. Thus, analytical limited. Hence, new forecasting method machine learning introduced. First, this paper...