Electrical stress-induced variable range hopping conduction is reported in the ultrathin silicon dioxides. The mediated by localized states, including various trap sites and interface states induced electrical stressing. Based on results, a model for mechanism of “B-mode” leakage current (B-SILC) proposed. This well explains temperature dependence large fluctuation B-SILC, which cannot be explained previous models B-SILC. Furthermore, an empirical expression current–voltage characteristics...

Dielectric breakdown in high-k gate dielectrics is discussed from the viewpoints of its mechanism and accurate TDDB lifetime assessment. As for dielectric mechanism, we have proposed generated subordinate carrier injection (GSCI) model. The GSCI model considers that injected carriers degrade occurs when their number reaches a threshold value. Due to existence trap-assisted conduction current component which does not contribute measured current, decomposition into each important precise...

Anomalous Time Dependent Dielectric Breakdown (TDDB) statistics of thick gate dielectrics, i.e., too large stress field/voltage dependence and nonlinear Weibull plot TDDB lifetime, have been observed. Through the analysis behaviors under also comparison with thin it has revealed that just intrinsic charging injected carriers to initial stress-generated defects induces dynamic relaxation constant-voltage stress, resulting in anomalous statistics. This charging-induced (CiDSR) effect reduces...

The conventional time dependent dielectric breakdown (TDDB) model is extended for ultra thin silicon dioxides on the basis of four stage process (FSM), in which consists two individual processes: “partial breakdown” and “complete breakdown”. lifetime measured under constant voltage stressing shows an anomalous gate area dependence as predicted by TDDB model. This can be adopted not only oxides but also where partial takes place. regarded a case to complete after ignored compared breakdown....

We show that the mobility degradation at low fields is predominantly due to a dipole layer intrinsically formed HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /SiO interface. This also responsible for anomalous V xmlns:xlink="http://www.w3.org/1999/xlink">FB</inf> (V xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> ) shift in high-k MOSFETs. Contribution of remote phonon scattering very little, as revealed by comparing behaviors...

Highly reliable ultrathin gate oxides (<5 nm) are required to realize high performance MOS LSIs. In such oxides, the breakdown process consists of partial-breakdown (p-BD) and complete-breakdown (c-BD). The p-BD is also called as quasi-breakdown or soft-breakdown (s-BD). time characterized by two specific times, c-BD after p-BD, retain a definition thick oxide even in oxides. Hence, it important predict these times independently. We reported that A-mode stress induced leakage current (SILC)...

The scaling limit of the silicon dioxides as gate dielectrics is discussed from viewpoint oxide lifetime. First, definition `oxide lifetime' in direct tunnelling regime has been studied, even though various studies report that soft breakdown (SBD) induces device failure. It revealed previous overestimated leakage current after SBD, i.e. the `B-mode' stress induced (B-mode SILC), and SBD stressed under typical device-operating conditions never prevents transistors working well. Although hard...

Conventional wet cleaning and ultrahigh vacuum (UHV) heated prior to thermal oxidation were compared with respect their effects on extremely thin SiO 2 /Si(001) interface roughness. Atomically flat interfaces realized by preparing the Si(001) reconstructed surface in UHV followed oxidation. In contrast conventional cleaning, this planarization is significant range of oxide thickness ( T ox )&lt;9 nm which an important for future gate oxides. As wet-cleaned surfaces, maximum roughness was...

The dielectric breakdown mechanism is studied from the viewpoint of relationship with generation defect sites in oxide film, utilizing "A-mode" stress induced leakage current (A-mode SILC) under constant-voltage stressing. It demonstrated that occurs when A-mode SILC becomes a threshold level, I/sub th/. In spite that, constant th/ for various fields expected by conventional model which assumes each site generated randomly th/, increases field. To explain this variety field, concept...

Abstract The trajectory of a small particle moving to bubble surface was analyzed by taking into account the effects charges and short range hydrodynamic interaction near surface, in flotation process. trajectories obtained theoretically were good agreement with those direct observation. Even if signs same, adhered when net force, that is, sum electrostatic force van der Waals attractive. Particle capture efficiency, η S , per estimated analysis T calculated. values calculated reasonable...

The polarities of charging damage in n- and p-channel metal–oxide–semiconductor field effect transistors (MOSFETs) with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar- Cl-based gas mixtures) found to depend on conditions, contrast those conventional SiO2. It was also that devices more susceptible than SiO2 devices. For Ar-plasma, which confirmed induce a larger damage, both MOSFETs stacks suffer from negative charge trapping, whereas Cl-plasma less...

To realize further advances in MOS ULSIs, thin gate oxides the direct tunneling regime (<3 nm) are strongly required. In this regime, most important issue is soft breakdown (SBD) (Depas et al., 1996) which induces "B-mode" stress induced leakage current (SILC) (Okada 1994 and 1998; Okada Kawasaki, 1995; Okada, 1997). Although Weir al. (1997) reported that SBD no significant degradation to a device, Wu (1998) have recently oxide immediately leads device failure for submicron...

The stress voltage dependence of oxide degradation has been studied utilizing the "A-mode" induced leakage current. Although defect site generation rate follows 1/E-model, T/sub BD/ (time to breakdown) seems follow E-model. At low region where deviates from Q/sub (electron fluence becomes constant in stead p/ (hole breakdown). Based on these results, Dominant Carrier Change model proposed. This allows a more aggressive use film, i.e., thinner thickness and higher operating voltages.

For the further advance of Si RF devices and also GaAs/GaN MMIC devices, highly reliable low leakage MIM structure with thick silicon nitride (SiN) film has to be realized on basis deeper understandings its degradation breakdown mechanisms. Therefore, a comprehensive study been performed TDDB mechanism structures SiN films having various thicknesses fabricated by three different deposition conditions and, then, new model, constant ΔE proposed. The Qbd (charge breakdown) hypothesis which is...

To establish the reliability model of high-k gate dielectrics in EOT-scaled regime, gradual increase leakage current during stress time, which makes precise detection breakdown harder, has been studied. It clarified that multiple occurrence soft (SBD) at plural local spots is cause increase, along with a large initial current. Based on this mechanism, for proposed. The proposed SBD-based gives us warning we will obtain inaccurate values Weibull slope (beta) and time to (T <sub...

Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) were studied for two different sources (Ar-and Cl-based gas mixtures), found to depend on conditions, contrast those conventional SiO . For Ar-plasma, which was confirmed induce a larger damage, both p-ch stacks suffer from negative charge trapping, whereas Cl-plasma less positive...

TiO2 films are deposited on glass substrate in O2/Ar gas mixtures by facing target planar magnetron (FT-PM) sputtering, and the effects of sputtering system crystal phases axis orientation investigated for as-deposited films. Deposition is carried out two systems: In first opposing magnets have opposite polarites internal permanent each holder; this leads to confinement electrons therefore weak electron bombardment substrate. The result poor grain growth with low quality anatase...

The fatigue properties of the structural steels were investigated based on "Database Fatigue Strength Metallic Materials" published by Society Material Science, Japan. rotating bending test results for pure iron and JIS S10C-S58C extracted from database hyperbola regression model was applied JSMS standard, "Standard Evaluation Method Reliability Materials-Standard Regression S-N Curve-". correlations between obtained parameters it is revealed that there strong correlation (1) tensile...

Dielectric breakdown mechanism of gate dielectrics has been reconsidered with SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> films various thicknesses ranging from 3.6 to 9.5 nm. Careful time-dependent dielectric (TDDB) measurements have realized the detection anomalous lifetime (T xmlns:xlink="http://www.w3.org/1999/xlink">BD</sub> ) lowering than expectation generally accepted power-law (PL) model at relatively low-voltage region...

Anomalous TDDB statistics, i.e., non-linear Weibull plot of lifetime, has been observed in thick SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate dielectrics. Different from the already reported `extrinsic' mechanisms thin dielectrics such as thickness variation, mechanism this new anomalous behavior is `intrinsic'. Just charging to native and generated defects under stress induces steep decrease defect generation rate, resulting...

Atomically flat silicon-oxide interfaces were obtained after preparing the Si(001)-2×1 reconstructed surface in ultrahigh vacuum (UHV) followed by native oxide growth and then conventional thermal oxidation. When is prepared with wet cleaning prior to oxidation, initially tend become rough smoother increasing thickness. In comparison interfaces, UHV planarization significant up thicknesses of about 8 nm. This thickness range will be extremely important for future ultralarge-scale integrated...