A5082049451- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Analog and Mixed-Signal Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Advancements in PLL and VCO Technologies
- Climate variability and models
- Meteorological Phenomena and Simulations
- Radio Frequency Integrated Circuit Design
- Quantum and electron transport phenomena
- Low-power high-performance VLSI design
- Silicon Carbide Semiconductor Technologies
- Flood Risk Assessment and Management
- Chromosomal and Genetic Variations
- Crystallization and Solubility Studies
- Tropical and Extratropical Cyclones Research
- X-ray Diffraction in Crystallography
- Plant tissue culture and regeneration
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Silicon Nanostructures and Photoluminescence
- Interconnection Networks and Systems
Kanazawa University
2012-2025
Komaki City Hospital
2005-2024
Hiroshima University
1993-2024
Sapporo Science Center
2023
Thuyloi University
2019
Aoyama Gakuin University
2000-2015
Osaka University
2004-2013
Central Institute for Experimental Animals
2008-2011
Chugai Pharma (United States)
2000-2009
The University of Tokyo
1997-2008
Aerosol- and moonsoon-related droughts floods are two of the most serious environmental hazards confronting more than 60% population world living in Asian monsoon countries. In recent years, thanks to improved satellite situ observations, better models, great strides have been made aerosol research, respectively. There is now a growing body evidence suggesting that interaction forcing with dynamics may alter redistribution energy atmosphere at Earth s surface, thereby influencing water cycle...
It is known that an n-channel MOSFET, operating in the saturation region, accompanied by visible light emission. The spectral distribution of this emitted reported paper for first time. behaves as exp (-α . hv) under various bias conditions (α: constant); energy state hot electrons described a Maxwell-Boltzmann distribution. hot-electron temperature MOSFET experimentally evaluated from photon spectrum analysis. As compared with electric field strength calculated two-dimensional simulation,...
Cultivated chrysanthemum (Chrysanthemum morifolium Ramat.) is one of the most economically important ornamental crops grown worldwide. It has a complex hexaploid genome (2n = 6x 54) and large size. The diploid Chrysanthemum seticuspe often used as model cultivated chrysanthemum, since two species are closely related. To expand our knowledge we here performed de novo whole-genome assembly in C. using Illumina sequencing platform. XMRS10, accession developed by five generations self-crossing...
The physics of electron transport in bulk silicon is investigated by using a newly developed Monte Carlo simulator which improves the state-of-the-art treatment hot carrier transport. (1) full band structure semiconductor was computed an empirical-pseudopotential method. (2) A phonon dispersion curve obtained from adiabatic bond-charge model. (3) Electron-phonon scattering rigid pseudo-ion calculated rate consistent with and silicon, thus leaving no adjustable parameters such as deformation...
The electron mobility in the inversion layer of a metal–oxide semiconductor field effect transistor formed on (100) silicon surface is calculated by using Monte Carlo approach which takes into account size quantization, acoustic phonon scattering, intervalley scattering and roughness scattering. Degeneracy also considered because it important at higher normal effective fields (high gate voltages). main emphasis placed influence specific autocovariance function, used to describe roughness,...
To evaluate the reliability of thin thermally grown oxide films, we investigated both step stress breakdown and time-dependent dielectric (TDDB) which exhibited two distinguished slopes in Weibull plots. It is demonstrated that intermediate mode ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</tex> mode) histogram corresponded to steep slope short time range TDDB plot. The observed shorter with field temperature. electric acceleration factor...
Diffusion of boron and phosphorus in dry , wet Ar, ambients was investigated to obtain a formula describing the oxidation enhanced diffusion. At low impurity concentration, diffusion coefficient is expressed as function oxide growth rate, depth, temperature
The kinetics of self-interstitials in silicon were investigated by monitoring oxidation stacking faults on backside oxidized wafers the temperature range 1100–1200 °C a wet O2 ambient. diffusion coefficient and thermal equilibrium concentration obtained optimizing model parameters to match calculated experimental observations growth at front surface protected from composite SiO2/poly Si/Si3N4 film.
An exact SOI device simulator applicable to prediction of the transistor characteristics in high-current region is developed. In simulator, basic two-dimensional Poisson's and current continuity equations are numerically solved under steady-state condition. To obtain a stable rapid convergence numerical scheme, newly developed alternative step solving method implemented. Using this drain kink effect, typical phenomenon for substrate-floating devices, exactly simulated first time. The...
The electroreflectance of Cd x Hg 1- Te alloys for from 0 to 0.70 and =0.97 =1 was measured by the electrolyte technique in range photon energy 0.5 6 eV at room temperature. E + Δ , 1 ' transitions were investigated as a function alloy composition. transition energies critical points show quadratic dependence on deviations linearity are interpreted using dielectric two band method. spin-orbit splitting k =0 HgTe directly 1.08±0.02
Abstract Chrysanthemums are one of the most industrially important cut flowers worldwide. However, their segmental allopolyploidy and self-incompatibility have prevented application genetic analysis modern breeding strategies. We thus developed a model strain, Gojo-0 ( Chrysanthemum seticuspe ), which is diploid self-compatible pure line. Here, we present 3.05 Gb chromosome-level reference genome sequence, covered 97% C. genome. The contained more than 80% interspersed repeats,...
Electrical stress-induced variable range hopping conduction is reported in the ultrathin silicon dioxides. The mediated by localized states, including various trap sites and interface states induced electrical stressing. Based on results, a model for mechanism of “B-mode” leakage current (B-SILC) proposed. This well explains temperature dependence large fluctuation B-SILC, which cannot be explained previous models B-SILC. Furthermore, an empirical expression current–voltage characteristics...
The impact ionization rate in GaAs is derived from a first principle’s calculation which includes realistic band structure and wave-vector- frequency-dependent dielectric function. highly anisotropic at low electron energy, while it becomes isotropic higher energy range events frequently occur. calculated well fitted to modified Keldysh formula with two sets of power exponents 7.8 5.6, indicating very soft threshold characteristics. Using full Monte Carlo simulation the empirical phonon...
The impact ionization rate in silicon is numerically derived from wave functions and energy band structure based on an empirical pseudopotential method. calculated well fitted to analytical formula with a power exponent of 4.6, indicating soft threshold rate, which originates the complexity Si structure. shows strong anisotropy at low electron (ε&lt;3 eV), while it becomes isotropic higher energy. Numerical calculation also reveals that average secondary generated carriers depends...
Using a grating pattern of parallel nitride and oxide stripes on the silicon surface, self-interstitial concentration at Si/SiO2 interface is accurately determined by means oxidation-induced stacking fault growth observation. The results show that interstitial found to be oxidation interstitials in rather than diffusion bulk silicon. A newly proposed physical model incorporates balance among generation rate oxidizing interface, annihilation due surface regrowth, which they diffuse into react...
The paper presents an analysis of switching characteristics in SOI MOSFET's. By using a two-carrier and two-dimensional transient simulator, calculated waveforms having good agreement with experimental results are obtained. Further revealed the mechanism characteristics. motion majority carriers features for devices both turn-on turn-off stages, although current overshooting time substrate potential recovery strongly affected by bias conditions. magnitude drain overshoot stage also proved to...
Onset of the Indian Summer Monsoon (ISM) has been defined by various methods, but it is uncertain which definition most adequate. Focusing on rapid transition atmospheric conditions and correspondence with rainfall from 1997 to 2004, we compare representativeness ISM onset described three variables spatially averaged over Arabian Sea. Though integrated water vapor significantly increases, cannot detect beginning rainy season. Moisture transport shows increase, represents abrupt conditions....
In this work we have undertaken a comparison of several previously reported computer codes which solve the semiclassical Boltzmann equation for electron transport in silicon. Most are based on Monte Carlo particle technique, and been used here to calculate relatively simple set characteristics, such as average energy. The results contributed by researchers from Japan, Europe, United States, were subsequently collected an independent observer. Although computed data vary widely, depending...