The current work proposes a novel technique to incorporate process-induced uni-axial stress for significant mobility boosting in high-performance metal–oxide–semiconductor field-effect-transistors. It has been shown that two existing standard techniques, namely, silicon-on-sapphire and high-k gate dielectrics can be combined develop such technology. Sapphire very high elastic constant thermal expansion coefficient, thereby capable of inducing amount which is observed biaxial nature. However,...

In this work, n-ZnO-nanowire/p-Si junction diodes have been fabricated and characterized both physically as well electrically. The measurements are performed on a single standalone nanowire diode for the investigation of electrical transport through nano-junction. rectification properties n-ZnO nanowire/p-Si studied various input waveforms frequencies. exhibit very promising switching behavior with no charge storage effect consequently, time small ∼1 ms has achieved.

In this paper, a high-quality crystalline thin film (~10 nm) of titanium dioxide (TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -II) phase is grown on p-GaAs (100) substrate by employing the vapor-liquid- solid method. The formation TiO -II films confirmed X-ray diffraction study. A very small rms surface roughness ~1 nm has been measured from atomic force microscopy. capacitance-voltage characteristics Al/TiO -II/GaAs...

Abstract The performance of dual‐gate GaAs‐nanowire field‐effect‐transistor (FET) is investigated as a charge‐qubit device operating at room temperature. In compatibility with the state‐of‐the‐art classical bit technology, it shown that single gate nanowire FET can be replaced by two localized gates to achieve such operation. On application relevant biases gates, voltage tunable quantum dots are created within channel electrostatically controlled single‐state‐occupancy and interdot coupling...

This article studies the impact of doping dependent carrier effective masses source/drain regions on transport properties Si-nanowire field effect transistors within ballistic limit. The difference mass in channel and that leads to a misalignment respective sub-bands forms non-ideal contacts. Such non-idealities are incorporated by modifying relevant self-energies which control electronic from source drain through channel. Non-ideality also arises nature local density states due sub-band...

In the current work, a design space for developing performance enhanced strain-engineered Si nanowire field-effect-transistors has been provided. The fraction of insertion channel into Insulator-on-Silicon substrate with judicious selection high-k gate insulators is used as key parameter. combined effect fractional and results in inducing stress and, depending on their selection, it changes from tensile to compressive. Such induced-stress alters existing inherent phononic-stress, leading...

The present work proposes a $\mathrm{Ga}\mathrm{As}$-nanowire-based vertical metal-oxide-semiconductor (MOS) solar cell of quantum scale to achieve very high efficiency beyond the Shockley-Queisser (SQ) limit. Photogeneration and carrier transport in such devices are analytically modeled by adopting nonequilibrium Green's function formalism based on second quantization field operators for incident photons generated photocarriers. study suggests that utilization photogenerated light heavy...

In this work, the high pressure phase of titanium dioxide (TiO 2 ‐II) film is grown with vapor‐liquid‐solid (VLS) method on &lt;100&gt;‐GaAs substrate by utilizing natural process‐induced‐strain, originating from thermo‐elastic mismatch between TiO and GaAs in VLS process. The mismatches thermal expansion coefficient elastic constant are which incorporate a substantial amount stress (≈GPa) during cooling growth temperature (500 °C). SEM imaging suggests formation continuous cross‐sectional...

Semiconductor quantum dots (QDs) are being regarded as the primary unit for a wide range of advanced and emerging technologies including electronics, optoelectronics, photovoltaics biosensing applications well domain q-bits based information processing. Such QDs suitable several novel device their unique property confining carriers 3-dimensionally creating discrete states. However, realization such in practice exhibits serious challenge regarding fabrication array with desired scalability...

In this work, process induced strain has been incorporated selectively into Si-substrate by growing TiO2 nano-islands on it using vapour–liquid–solid method and the retained chemically removing nano-islands. The is quantified employing pole study of electron backscatter diffraction (EBSD) compared with similar results obtained from micro-Raman measurements. A very good agreement between indicates accuracy developed analyses. Both methods suggest that such a low-cost approach capable...

The present work investigates the possible correlation topologies of two interacting qubits in parameter space their potential. It has been shown that evolved combined state such may be either a separable or an entangled depending on nature and parameters potential, although it is impossible to travel from one maximally another topological by continuously varying without crossing intermediate state, vice-versa. theoretical constructs interaction potentials required for rotating qubit through...

Abstract Exotic optical responses of designed metasurfaces, including non‐Hermitian photonic systems exhibiting exceptional point (EP)‐singularities, offer diverse applications in the field quantum sensing, laser technology, gravitational‐wave detection as well biomedical instrumentation for weak signal detection. However, sensitivity enhancement such EP‐sensors is limited by quantum/thermal noises. Here we propose a novel scheme EP‐based superior sensing any molecule, using suitably...

The current work proposes a novel scheme for developing light-activated non-filamentary memristor device by fabricating an Au-nanoparticle embedded HfO$_2$-bilayer/p-Si MOS structure. Under illumination, the electrons in such Au-nanoparticles are excited from d-level to quantized s-p level and swept out on application of appropriate gate bias, leaving behind holes without recombination. Such photogenerated confined within nanoparticles thus screen external field lead memristive effect...

In the current work, contribution of gate oxide/channel interface roughness has been estimated and incorporated into transport models a Si nanowire field-effect-transistor (Si NWFET). This by modifying relevant energy sub-bands taking account in both transverse longitudinal directions. Accordingly, channel Hamiltonian matrix elements related to are modified. It observed from study that such significant effect on device performance terms transfer output characteristics. The characteristics...

The current work sought to investigate the effect of Eugenol (Eug) on oxidation Gallic acid (GA) by employing Cyclic Voltammetry (CV) technique. Voltammetric analysis indicates a significant suppression such process with increasing Eug concentration (~0.1-0.4% v/v). In present study, platinum (Pt) working electrode has been considered instead conventional glassy carbon (GCE) due its superior sensitivity towards GA solution. peak for Pt is obtained at -0.3 V and observed be decremented in an...

Abstract In the context of century-long debate on quantum measurement problem, current work proposes a model that describes process collapse state by interaction, which resolves controversies framework mechanics and entire domain quantum-to-classical world including weak partial collapse. ‘Measurement’, being physically interacting with system in order to extracting information from it, is theorized synthesizing interaction between measuring apparatus entropy such process. The assumes...