A5030697821- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Advanced Semiconductor Detectors and Materials
- CCD and CMOS Imaging Sensors
- Phase-change materials and chalcogenides
- Photonic and Optical Devices
- Machine Learning in Materials Science
- Infrared Target Detection Methodologies
- Advanced Thermoelectric Materials and Devices
- Semiconductor Quantum Structures and Devices
IRnova (Sweden)
2024
IMEC
2018-2022
Hasselt University
2018-2022
Imec the Netherlands
2021
Grenland Energy (Norway)
2021
Material (Belgium)
2019-2020
KU Leuven
2020
Izmir Institute of Technology
2018
In this work, metal–insulator–semiconductor structures were fabricated in order to study different types of insulators, namely, aluminum oxide (Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ), silicon nitride, and (SiO <italic xmlns:xlink="http://www.w3.org/1999/xlink"> <sub>x</sub></i> ) be used as passivation layers Cu(In,Ga)Se (CIGS) thin-film solar cells. The investigated...
In this study, the effect of sulfurization temperature on morphology, composition and structure Cu 2 ZnSnS 4 (CZTS) thin films grown titanium (Ti) substrates has been investigated.Since Ti foils are flexible, they were preferred as a substrate.As result their flexibility, allow large area manufacturing roll-to-roll processes.To understand effects CZTS formation foils, fabricated with various temperatures investigated several analyses including x-ray diffraction (XRD), scanning electron...
A simplified Cu(In, Ga)Se2 (CIGS) solar cell structure based on a 500 nm thin CIGS layer is presented. The absorber layers are grown with single-stage coevaporation process, and various KF post-deposition treatments (KF-PDT) performed. KF-PDT leads to an efficiency increase from 7% 12%. For all cells in open circuit voltage (Voc) fill factor measured, which attributed improved pn junction. By changing the annealing conditions, additional Voc measured. This reduction of light-induced defects...
In this work, hafnium oxide layer is investigated as rear surface passivation for ultra-thin (550 nm) CIGS solar cells. Point contact openings in the are realized by spin-coating potassium fluoride prior to absorber growth. Contacts formed during growth and visualized with scanning electron microscopy (SEM). To assess passivating qualities, HfO x was applied a metal-insulator-semiconductor (MIS) structure, it demonstrates low interface trap density combination negative of charges. Since we...
In the present contribution, we have measured and simulated room temperature bias- frequency-dependent capacitances of thin-film solar cell devices. The results both simulations experimental measurements are represented as 2-D contour plots showing derivative capacitance with respect to frequency multiplied by frequency. These called "loss maps," because responses in these correspond different nonidealities Using a 1-D drift-diffusion solver (SCAPS), devices, such series resistance, bulk...
To determine if Cu(In, Ga)Se2 (CIGS) can be submitted to the constraints that will imposed on solar materials of future by an ever growing demand and necessity, we produced ultrathin (500 nm) single-stage coevaporated CIGS cells doped with varying amounts types alkali atoms. We subjected them accelerated lifetime testing. In present work, observed seeping water into grain boundaries which could identified as one main culprits for performance degradation. addition, this phenomenon only when...
This work unravels the device characteristics, interface and band offset properties of Cu<sub>2</sub>ZnGeSe<sub>4</sub> (CZGSe), a promising earth-abundant non-toxic semiconductor material for thin-film solar cell applications.
Abstract This work presents a novel method of local contact openings formation in an aluminum oxide (Al 2 O 3 ) rear surface passivation layer by the selenization lithium fluoride (LiF) salt on top Al for ultra-thin copper indium gallium (di)selenide (CIGS) solar cells (SCs). study introduces potentially cost-effective, fast, industrially viable, and environmentally friendly way to create nano-sized with homogeneous distribution thick, i.e. up 30 nm, layer. The is deposited atomic...
In Cu(In,Ga)Se 2 (CIGS) thin‐film solar cells, interface recombination is one of the most important limiting factors with respect to device performance. Herein, metal–insulator–semiconductor samples are used investigate and compare passivation effects Al O 3 HfO at CIGS. Capacitance–voltage–frequency measurements allow qualitatively quantitatively assess existence high negative charge density ( Q f ≈ −10 12 cm −2 ) low interface‐trap D it 10 11 eV −1 ). At rear CIGS these, respectively,...
In ultrathin Cu(In,Ga)Se 2 (CIGS) film solar cells, the CdS/CIGS interface may become one of limiting factors for efficiency. The first step toward reducing impact this problem could be a surface treatment process to improve quality front interface. purpose study is have better understanding effect wet chemical treatment, using ammonium sulfide ((NH 4 ) S), on CIGS thin layers with different Cu/(Ga + In) (CGI) ratios. Herein, photoluminescence (PL) and time‐resolved PL (TRPL) studies are...
Ultrathin single- and three-stage Cu(In,Ga)Se2 absorber layers were analyzed with room temperature photoluminescence (PL) spectra. An anomalous blueshift was observed upon increasing carrier injection for both samples. This attributed to the presence of bandgap fluctuations that are same order as minority diffusion length. From time resolved measurements, a length few 100 nms deduced. The single-stage spectrum consists two peaks, sample was, therefore, also by hyperspectral imaging,...
Passivation of the Cu(In,Ga)Se 2 (CIGS)/Mo back contact using AlO x is studied to reduce recombination at this interface. Herein, RbF postdeposition treatment (RbF‐PDT), a well‐established method improve absorber and front interface properties used on back‐passivated solar cells. It found that combination deteriorates performance due formation an injection barrier reduced acceptor concentration. Photoluminescence yield decay times show no indication increased defect recombination, as both...
Interface recombination is one of the factors limiting performance Cu(In,Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (CIGS). Especially in absence band grading at front and rear surface, interface passivation approaches become important to improve device performance. The integration an oxide layer as surface CIGS requires meticulous considerations order not impact further steps solar cell production. In this article, a novel...
Interface quality plays a key role in solar cell applications. recombination at the front and rear surfaces, which determine this quality, have significant effects on open circuit voltage fill factor values. In work, several surface treatments were applied Cu(In,Ga)Se 2 (CIGS) surfaces to improve interface quality. Besides, passivation layer implementation was investigated reduce between buffer absorber layers.
Thanks to their high technology readiness level, quantum well infrared photodetectors (QWIP) provide an efficient and swift solution for meeting the increased demand advanced LWIR imaging systems. IRnova's present portfolio includes QWIP detectors dual-colour, gas detection, polarimetric on 30 15 μm pitch, while development of large-format HD arrays 10 pitch is ongoing. <br/> In this work, latest advancements (peak absorption at 8.5 μm) are presented: firstly, focusing progress...
Herein, a model is developed to study the polarization‐selective light‐coupling in quantum well infrared photodetector arrays with 15 and 30 μm pixel pitch. The achieved using 1D lamella gratings varying grating orientation studied through 2D 3D finite‐element method simulations. extracted absorption efficiency η abs , derived from field distribution, shows excellent agreement experimental data terms of peak position for both pitch sizes. Several factors impacting simulated absorptance level...
Producing the green energy of tomorrow will require highly efficient as well energy-, and cost-effective solar cells in addition to having reasonable lifetimes. To determine if CIGS can be made submit these constraints, we produced ultra-thin (500nm) single-stage coevaporated cells. We doped with varying amounts types alkali atoms submitted them accelerated lifetime testing. Results showed definite effect concentration on degradation but limited migration. Instead, seeping water into grain...
Thin (<;500 nm) single-stage coevaporated Cu(In, Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2 </sub> absorber layers are treated with a KF postanneal in N xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> atmosphere. The conditions of the initial acceptor concentration and temperature varied. Solar cells characterized current-voltage capacitance-voltage measurements. Efficiencies up to 12% an open-circuit voltage (V...