A5066558315- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Conducting polymers and applications
- Organic Electronics and Photovoltaics
- 2D Materials and Applications
- Advanced Photocatalysis Techniques
- Nanowire Synthesis and Applications
- Machine Learning in Materials Science
- ZnO doping and properties
- Ga2O3 and related materials
- Vehicle Routing Optimization Methods
- Advanced Multi-Objective Optimization Algorithms
- Semiconductor Quantum Structures and Devices
- Gas Sensing Nanomaterials and Sensors
- Metaheuristic Optimization Algorithms Research
- Advanced Sensor and Energy Harvesting Materials
- Facility Location and Emergency Management
- Infrared Target Detection Methodologies
- Transition Metal Oxide Nanomaterials
- Luminescence Properties of Advanced Materials
- Smart Parking Systems Research
- GaN-based semiconductor devices and materials
- Optimal Experimental Design Methods
- Ferroelectric and Piezoelectric Materials
Beijing Institute of Technology
2015-2024
Minzu University of China
2023-2024
Ghazi University
2023-2024
Bridge University
2024
University of Balochistan
2023
Université de Haute-Alsace
2022-2023
Beijing Institute of Optoelectronic Technology
2018-2020
Abdul Wali Khan University Mardan
2020
Institute of Micro and Nanotechnology
2019
Nanjing University of Aeronautics and Astronautics
2016-2017
Abstract Self‐powered broadband photodetectors exhibit excellent self‐powered and wide‐band photoresponse from visible to infrared region attract enormous attention due their promising applications in imaging, sensing, optical communication. PbSe colloidal quantum dots (CQDs) halide perovskites nanocrystals (NCs) are commonly used for strong absorption capability, tunable bandgap, high aspect ratio. However, suffering low charge carrier mobility trap density, the performance of individual...
Heterojunctions based on low dimensional semiconducting materials are one of the most promising alternatives for next-generation optoelectronic devices. By choosing different dopants in high-quality nanomaterials, p-n junctions can be realized with tailored energy band alignments. Also, bulk-heterojunctions (BHJs) photodetectors have shown high detectivity because suppressed dark current and photocurrent, which due to larger built-in electric potential within depletion region significantly...
In recent years, development in organic solar cells speeds up and performance continuously increases. From the last few machine learning gains fame among scientists who are researching on cells. Herein, is used to screen small‐molecule donors for Molecular descriptors as input train models. A variety of machine‐learning models tested find suitable one. Random forest model shows best predictive capability (Pearson's coefficient = 0.93). New also designed from easily synthesizable building...
Abstract The demand for charge‐coupled device (CCD) imagers has surged exponentially during the last decade owing to their exceptionally high quality and low noise imaging. However, they are still confronting performance constraints of operation power, speed, limited charge integration. Here, electric‐dipole gated phototransistor without external gate bias is reported by using high‐ k HfO 2 dielectric material. electrostatic coupling photogenerated charges from Si with graphene channel...
The article explores the enhanced performance of photodetectors based on nanocomposites CsPbI 3 nanorods and PbSe QDs by studying their impact charge carrier dynamics optoelectronic properties, thus to understand underlain mechanism.
All-inorganic lead halide perovskites and quantum dots (QDs) have gained significant attention since their emergence, owing to immense potential for applications in optoelectronic devices. Here, enhanced-performance broadband photodetectors based on the bulk-heterostructure of a CsPbBr
With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, currently the maximum certified power conversion efficiency 9.9% has reported by passivation treatment molecular iodine. Presently, there still some challenges, basic physical...
Currently, colloidal quantum dots (CQDs)-based photodetectors are widely investigated due to their low cost and easy integration with optoelectronic devices. The requirements for a high-performance photodetector dark current high photocurrent. Normally, also possess photocurrent, or reduced resulting in detectivity. In this paper, solution suppress maintain i.e., use of poly(methyl methacrylate) doped Au nanoparticles (NPs) (i.e., PMMA:Au) as an interlayer enhanced-performance tandem...
The development of information sensing technology depends on overcoming the difficulties high‐performance broadband photodetection by developing novel devices that incorporate new materials and structural innovations. combination silicon with two‐dimensional has made a breakthrough in discoveries high‐speed, highly sensitive, low‐power photodetectors. Graphene (Gra) is an attractive 2D material because its unique optical, electrical, mechanical, thermal properties. Over wide spectral range,...
Abstract The emerging flexible device technologies have fascinated the modern optoelectronic industry owing to their invincible properties such as wearable, stretchable, smart, energy‐efficient, scalability, cost‐effective, and high performance. However, there is still room for improvements performance, reliability, mass production. This research work fabricates laser‐induced graphene (LIG) interdigitated electrodes based on UV photodetectors over polyimide substrate, using...
Narrow band-gap colloidal quantum dots (CQDs) are promising materials for flexible electronic, such as infrared light photodetectors and solar cells.
Abstract All‐inorganic lead halide perovskites with good surface morphology show substantial prospect for optoelectronic devices. However, the anion exchange of coordinated alkylamine ligands (e.g., oleic acid and oleylamine) can detach induce more interface trap sites, subsequently to reduce device performance. In this paper, therefore, a simple solution‐processed route is presented synthesize quasi coreshell CsPbBr 3 formamidinium iodide (FAI = CH(NH 2 ) I) colloidal quantum dots (CQDs),...
Abstract In general, the fabrication of high‐performance, self‐powered broadband photodetectors based on traditional semiconducting thin films is tedious and costly. Here, in this paper a solution‐processed, CH 3 NH PbI (MAPbI ) nanocrystal photodetector ITO/MAPbI /Ag presented, it shows photoresponse from visible to near‐infrared wavelength region. The pronounced enhanced performance due taking advantage built‐in electric field induced by work function difference two electrodes. optimized...
Abstract All‐inorganic halide perovskites have recently emerged as a promising candidate for new‐generation optoelectronics. The device performance of solution‐processed photodetectors critically depends on the surface morphology and film features, however, behind mechanism is not clear till now. In this paper, feasible method surface‐passivating all‐inorganic with poly(3‐hexylthiophene) (P3HT) photoactive layer field‐effect transistor (FET)‐based presented, underlying mechanisms to enhance...
All‐inorganic halide perovskite nanocrystals (NCs) have attracted great attention, prized for their excellent photophysical properties. However, the insulating nature of alkylamine ligands impede electrical performance optoelectronic devices. The control content passivating and suppression mid‐gap trap state from NCs is an essential step to boost device performance. Therefore, in this report a facile one ligand‐exchange procedure employed by rinsing film into excess bromide passivate surface...
High-performance, self-driven broadband photodetectors on flexible silicon nanowires (Si-NWs) substrate, in which Si-NWs are covered with reduced graphene oxide to form heterojunctions, presented.
High performance solution-processed infrared photodiodes ITO/ZnO/PbS<sub>x</sub>Se<sub>1−x</sub>/Au, in which ternary PbS<sub>x</sub>Se<sub>1−x</sub> colloidal quantum dots acts as the active layer and ZnO interlayer electron-transporting layer, have been demonstrated.