Ali Imran

ORCID: 0000-0003-4186-553X
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About
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Research Areas
  • Nanowire Synthesis and Applications
  • Semiconductor Quantum Structures and Devices
  • Graphene research and applications
  • Quantum Dots Synthesis And Properties
  • GaN-based semiconductor devices and materials
  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Ga2O3 and related materials
  • Semiconductor materials and interfaces
  • Advancements in Battery Materials
  • solar cell performance optimization
  • ZnO doping and properties
  • Chalcogenide Semiconductor Thin Films
  • Laser Design and Applications
  • Multiferroics and related materials
  • Metal and Thin Film Mechanics
  • Photovoltaic System Optimization Techniques
  • Advanced Memory and Neural Computing
  • Magnetic Properties and Synthesis of Ferrites
  • Advanced Machining and Optimization Techniques
  • Advanced Battery Materials and Technologies
  • Diamond and Carbon-based Materials Research
  • Tribology and Wear Analysis
  • Advanced Semiconductor Detectors and Materials
  • Laser-induced spectroscopy and plasma

Minzu University of China
2024

Zhejiang University
2021-2024

University of Engineering and Technology Lahore
2024

Government College University, Faisalabad
2023-2024

University of the Punjab
2015-2023

State Key Laboratory of Silicon Materials
2022-2023

Peking University
2019-2022

Beijing Institute of Technology
2015-2022

Zhejiang University-University of Edinburgh Institute
2022

King Saud University
2018-2021

Abstract Self‐powered broadband photodetectors exhibit excellent self‐powered and wide‐band photoresponse from visible to infrared region attract enormous attention due their promising applications in imaging, sensing, optical communication. PbSe colloidal quantum dots (CQDs) halide perovskites nanocrystals (NCs) are commonly used for strong absorption capability, tunable bandgap, high aspect ratio. However, suffering low charge carrier mobility trap density, the performance of individual...

10.1002/adfm.202201527 article EN Advanced Functional Materials 2022-05-04

Heterojunctions based on low dimensional semiconducting materials are one of the most promising alternatives for next-generation optoelectronic devices. By choosing different dopants in high-quality nanomaterials, p-n junctions can be realized with tailored energy band alignments. Also, bulk-heterojunctions (BHJs) photodetectors have shown high detectivity because suppressed dark current and photocurrent, which due to larger built-in electric potential within depletion region significantly...

10.1021/acsami.3c01749 article EN ACS Applied Materials & Interfaces 2023-05-19

Abstract Over the past 70 years, semiconductor industry has undergone transformative changes, largely driven by miniaturization of devices and integration innovative structures materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) graphene are pivotal in overcoming limitations silicon-based technologies, offering approaches transistor design functionality, enabling atomic-thin channel transistors monolithic 3D integration. We review important progress...

10.1007/s11432-024-4033-8 article EN cc-by Science China Information Sciences 2024-05-29

Embedding the functional nanostructures into a lightweight nanocarbon framework is very promising for developing high performance advanced electrodes rechargeable batteries. Here, to realize workable capacity, core-shell (FeSe2 /C) are embedded carbon nanotube (CNT) via facile wet-chemistry approach accompanied by thermally induced selenization. The CNT offers 3D continuous routes electronic/ionic transfer, while macropores provide adequate space mass loading of FeSe2 /C. However, shell not...

10.1002/smll.202002200 article EN Small 2020-11-01

Abstract M-type barium hexaferrites (BaM) with the substitution of Ce–Dy ions were synthesized using sol-gel auto-ignition method. The prepared materials explored for their application as a permanent magnet and microwave absorbing material. structural properties, phase evaluation, micro-strain, morphological analysis, magnetic behaviour, properties optical studied by employing various techniques. parameters identification obtained Rietveld refinement confirmed formation an hexaferrite...

10.1088/1361-6463/abf864 article EN Journal of Physics D Applied Physics 2021-04-16

Abstract The demand for charge‐coupled device (CCD) imagers has surged exponentially during the last decade owing to their exceptionally high quality and low noise imaging. However, they are still confronting performance constraints of operation power, speed, limited charge integration. Here, electric‐dipole gated phototransistor without external gate bias is reported by using high‐ k HfO 2 dielectric material. electrostatic coupling photogenerated charges from Si with graphene channel...

10.1002/adom.202300910 article EN Advanced Optical Materials 2023-07-21

The article explores the enhanced performance of photodetectors based on nanocomposites CsPbI 3 nanorods and PbSe QDs by studying their impact charge carrier dynamics optoelectronic properties, thus to understand underlain mechanism.

10.1039/d4sc00722k article EN cc-by-nc Chemical Science 2024-01-01

Sustainability ensures well-being for people and communities worldwide helps shape the world's present future. A global transformation is required by adopting renewable energy sources to achieve sustainability. trends have been examined using this study period 1992-2018 G20 countries. The uses indicators like ecological footprints, natural resources, (RE), non-renewable (NRE), along with gross domestic product (GDP) capital formation. cross-sectional-ARDL approach has used examine short-...

10.1016/j.heliyon.2023.e18882 article EN cc-by-nc-nd Heliyon 2023-08-01

Abstract The emerging flexible device technologies have fascinated the modern optoelectronic industry owing to their invincible properties such as wearable, stretchable, smart, energy‐efficient, scalability, cost‐effective, and high performance. However, there is still room for improvements performance, reliability, mass production. This research work fabricates laser‐induced graphene (LIG) interdigitated electrodes based on UV photodetectors over polyimide substrate, using...

10.1002/admt.202301650 article EN Advanced Materials Technologies 2024-01-04

Given that plant disease is the primary factor contributing to damage in most plants, decision makers agriculture industry are highly interested enhancing prediction strategies detect illness plants at an early stage. This crucial for ensuring timely and effective care. Classifying healthy soybean a dependable efficient use of noninvasive techniques like machine learning (ML). In this work, we used ML enhance smart forecasting model diseases. We utilized two feature selection techniques,...

10.54216/fpa.180205 article EN Fusion Practice and Applications 2025-01-01

The revolution in industrialization throughout the world has boosted utilization of machinery and shifted muscle power to machines. use machines various sectors increased demand petroleum based lubricants. Lubricants act as an antifriction media, facilitating smoother working, reducing risks undesirable frequent failures maintaining reliable machine operations among different rotating parts Due depleting resources environment concern, non-edible vegetable oil lubricants well. In this regard,...

10.1016/j.proeng.2013.12.165 article EN Procedia Engineering 2013-01-01

Monoclinic gallium oxide (Ga2O3) has been grown on (0001) sapphire (Al2O3) substrate by plasma-assisted molecular beam epitaxy (PA-MBE). The epitaxial relationship confirmed to be [010]( ) β-Ga2O3||[ ](0001)Al2O3 via in-situ reflection high energy electron diffraction (RHEED) monitoring and ex-situ X-ray (XRD) measurement. Crystalline quality is improved surface becomes flatter with increasing growth temperature, a best full width at half maximum (FWHM) of XRD ω-rocking curve ( plane root...

10.1088/1674-4926/40/1/012802 article EN Journal of Semiconductors 2019-01-01

Abstract The fabrication of high‐speed electronic and communication devices has rapidly grown the demand for high mobility semiconductors. However, their cost complex process make them less attractive consumer market industrial applications. Indium nitride (InN) can be a potential candidate to fulfill requirements due simple low‐cost as well unique properties such narrow direct bandgap electron mobility. In this work, 3 µm thick InN epilayer is on (0001) gallium (GaN)/Sapphire template under...

10.1002/admi.202200105 article EN Advanced Materials Interfaces 2022-03-25
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