A5046299265- 2D Materials and Applications
- Perovskite Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Luminescence and Fluorescent Materials
- Plasmonic and Surface Plasmon Research
- ZnO doping and properties
- Ga2O3 and related materials
- Advanced Semiconductor Detectors and Materials
- Coral and Marine Ecosystems Studies
- Advanced biosensing and bioanalysis techniques
- Multiferroics and related materials
- Photorefractive and Nonlinear Optics
- Nanowire Synthesis and Applications
- Advanced Thermoelectric Materials and Devices
- Semiconductor Quantum Structures and Devices
- Nonlinear Optical Materials Research
Hunan University
2017-2025
Changsha University
2019
State Council of the People's Republic of China
2019
State Key Laboratory of Chemobiosensing and Chemometrics
2017
Abstract The bulk photovoltaic effect (BPVE) originating from spontaneous charge polarizations can reach high conversion efficiency exceeding the Shockley-Queisser limit. Emerging van der Waals (vdW) heterostructures provide ideal platform for BPVE due to interfacial interactions naturally breaking crystal symmetries of individual constituents and thus inducing polarizations. Here, we show an approach obtain ultrafast by taking advantage dual in vdW heterostructures. While in-plane...
Correlated insulating states such as fermionic and bosonic insulators have been observed individually in transition metal dichalcogenide heterostructures. However, the interplay between correlated their dynamical evolution on a single system, remain largely unexplored. Here, we demonstrate that twisted trilayer heterostructures host an unconventional complex, namely charge-layer-locked trion with symmetric charge configuration. Owing to its spatially-indirect distribution, this can...
Abstract Indium selenide (InSe) has attracted tremendous research interest due to its excellent optical and electronic properties. The direct bandgap of bulk InSe promises efficient carrier recombination in the near‐infrared (NIR) spectral range, holding great potential for NIR‐based optoelectronic device applications. However, lowest energy transition involves out‐of‐plane dipoles, with resulting photoluminescence (PL) transmitted mainly along layer plane. This limits both excitation...
Abstract Self‐powered ultrafast 2D photodetectors have demonstrated great potential in imaging, sensing, and communication. Understanding the intrinsic charge carrier generation separation processes is essential for achieving high‐performance devices. However, probing manipulating photoresponse limited either by temporal resolution of conventional methods or required sophisticated device configurations. Here, van der Waals heterostructure are constructed based on MoS 2 /WSe p–n n–n junctions...
Atomically thin two-dimensional (2D) layered materials have potential applications in nanoelectronics, nanophotonics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad high-performance devices, such as broad-band photodetectors, multi-color light emitting diodes (LEDs), high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on controlled growth composition modulated atomically semiconductor alloys...
Understanding the excitonic behavior in two-dimensional transition-metal dichalcogenides (2D TMDs) is of both fundamental interest and critical importance for optoelectronic applications. Here, we investigate transient Stokes shift WS2 monolayers on sapphire glass substrates. Trion formation was confirmed as origin distinct photoluminescence (PL) emission monolayers. Moreover, studies demonstrate faster recombination exciton short-lived trion substrate compared to that substrate, owing...
Two-dimensional (2D) magnetic materials have aroused tremendous interest due to the 2D confinement of magnetism and potential applications in spintronic valleytronic devices. However, most currently are achieved by exfoliation from their bulks, which thickness domain size difficult control, limiting practical device applications. Here, we demonstrate realization thickness-tunable rhombohedral Cr 2 Se 3 nanosheets on different substrates via chemical vapor deposition route. The transition...
Understanding the fundamental charge carrier dynamics is of great significance for photodetectors with both high speed and responsivity. Devices based on two-dimensional (2D) transition metal dichalcogenides can exhibit picosecond photoresponse speed. However, 2D materials naturally have low absorption, when increasing thickness to gain higher responsivity, response time usually slows nanoseconds, limiting their photodetection performance. Here, by taking time-resolved photocurrent...
Transition metal dichalcogenide heterobilayers feature strong moiré potentials with multiple local minima, which can spatially trap interlayer excitons at different locations within one unit cell (dubbed locales). However, current studies mainly focus on trapped a single locale. Exploring locales is highly desirable for building polarized light-emitter arrays and studying multiorbital correlated topological physics. Here, via enhancing the coupling engineering heterointerface, we report...
Carrier transportation in semiconductor nanowires is essential for their application integrated opto-electronic devices. Therefore, it of importance to manipulate and enhance the performance through micro-nano scale engineering. In this work, carrier dynamics waveguides bandgap-graded CdSxSe1-x systematically investigated. By developing a spatially separated time-resolved photoluminescence spectroscopy system, dependence between propagation distance/direction bandgap gradient driven...
The reconstructed moiré superlattices of the transition metal chalcogenide (TMD), formed by combined effects interlayer coupling and intralayer strain, provide a platform for exploring quantum physics. Here, using scanning tunneling microscopy/spectroscopy, we observe that strained WSe
Abstract The quantum optical phenomena, such as single‐photon emission, in transition metal dichalcogenides (TMDCs) have triggered extensive research on 2D material‐based optics and devices. By far, most reported emissions TMDCs are based atomic defects or the local confinement of excitons. In contrast, energy transfer between two materials could also manipulate photon emission behaviors materials, even at level. Here, fluorescence blinking from MoS 2 layers dot (QD)/MoS hybrid...
Intralayer and interlayer excitons are fundamental quasiparticles that can appear simultaneously in transition metal dichalcogenide van der Waals heterostructures. The understanding modulation of the interaction intralayer great importance for both studies device applications. Here, we demonstrate photoluminescence (PL) emissions WSe2/WS2 heterostructures using different stacking configurations a single sample, including with without hexagonal boron nitride (hBN) encapsulation hBN spacing...
Two-dimensions Ruddlesden–Popper perovskites (RPPs) are promising materials for spintronic devices due to the spin–orbit coupling. However, a relative low spin related photoluminescence (PL) circular polarization is observed from RPPs at room temperature relaxation and flip caused by soft lattice of RPPs. Here, we report enhancement PL reducing carrier lifetime via constructing van der Waals heterostructures. We maximum reaching about 30%. Moreover, found that degree decreases as thickness...
Constructing van der Waals materials with spontaneous out-of-plane polarization through interlayer engineering expands the family of two-dimensional ferroelectrics and provides an excellent platform for enhancing photoelectric conversion efficiency. Here, we reveal effect on ultrafast carrier dynamics in rhombohedral stacked bilayer WSe
Energy transfer from zero-dimensional (0D) quantum dots (QDs) to two-dimensional (2D) materials has attracted much attention for both the manipulation of fundamental material properties and their potential device applications. An understanding effect dipole interactions on energy rate in hybrid dimensional system is essential improving optoelectronic performance. Here, we report dipole-orientation-dependent individual core–shell CdSe/ZnS QDs bilayer molybdenum disulfide (MoS2) by utilizing...
Two-dimensional (2D) Ruddlesden–Popper (RP) perovskite materials have been widely studied as optoelectronic and photonic devices because of the combination advantages perovskites unique excitonic properties in 2D limit. However, thin flakes, general, suffer from a weak photoluminescence (PL) emission surface defects related to nonradiative recombinations. Here, we demonstrate that PL RP can be enhanced by introduction spiro-OMeTAD, which effectively passivates perovskites. By steady-state...
Due to the large exciton binding energy, two-dimensional (2D) transition metal dichalcogenides (TMDCs) provide an ideal platform for studying excitonic states and related photonics optoelectronics. Polarization lead distinct light-matter interactions which are of great importance device applications. In this work, we study polarized photoluminescence spectra from intralayer indirect in WS 2 WSe atomic layers, interlayer /WSe heterostructures by radially azimuthally cylindrical vector laser...
Abstract The quantum optical phenomena, such as single photon emission, in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have triggered extensive researches on 2D material-based optics and devices. By far, most reported emissions TMDCs are based atomic defects the material or local confinement of excitons by introducing stain potential. In contrast, energy transfer between two materials could also manipulate emission behaviors materials, even at level. Along with...