A novel combined beam antenna for 5G communications using a 28-GHz frequency band is proposed, which provides tilted radiation on an elevation plane. Instead of applying conventional array technique to produce scanned beam, two different radiating elements have been in order obtain relatively wide but high gain target direction. There are main radiators; one group microstrip patches, and the other waveguide aperture. The patches split strong beams azimuth aperture further increases Finally,...

This letter presents a 28 GHz switched five-beam antenna system based on rectangular waveguide and reconfigurable semiconductor circuit (RSC) with slots. Surface p-i-n diodes are used to close or open slots in order achieve required configuration of an aperture. The RSC modified WR28 composes radiating structure (RRS), which provides three beams directed toward 0°, 30°, 45°. Beam switching is achieved by arrangement set Complementary RRSs connected the electromechanical RF switch generate...

An ultrawideband common-gate low noise amplifier with tunable interference rejection is presented. The proposed LNA embeds a active notch filter to eliminate interferer at 5-GHz WLAN and employs input stage dual-resonant loads for wideband implementation. This has been fabricated in 0.18-¿m CMOS process. measured maximum power gain 13.2 dB figure 4.5-6.2 bandwidth of 3.1-10.6 GHz. 8.2 compared the 7.6 5.2 GHz , respectively. P1dB -11 dBm 10.3 It consumes 12.8 mA from 1.8-V supply voltage.

This paper presents millimeter-wave (mmWave) propagation characteristics and channel model parameters including path loss, delay, angular properties based on 28 GHz 38 field measurement data.We conducted campaigns in both outdoor indoor at the best potential hotspots.In particular, are compared to sub-6 parameters, system design issues considered for mmWave 5G Giga communications.For loss modeling, we derived close-in free space alpha-beta-gamma model.For multipath models, extracted delay...

In this paper, an analysis of a power amplifier manipulated using second harmonic (PA-2HM) is described remarkable correlation between the fundamental and impedances. The output loading condition, made up optimum impedance mapped to conditional reactance, allows us achieve high-efficiency (PA) with simple matching circuit. For analysis, voltage current waveforms are modeled in terms their order extend efficiency. Specific PA-2HM cases, inverse Class-F Class-J modes, analyzed different...

A fully integrated complementary metal oxide semiconductor (CMOS) cascode LC voltage controlled oscillator (VCO) with Q-enhancement technique has been designed for high frequency and low phase noise. The symmetrical architecture is implemented negative conductance circuit improving noise performance in 0.18 mum CMOS technology. measured -110.8 dBc/Hz at the offset of 1 MHz. tuning range 630 MHz achieved control from 0.6 to 1.4 V. VCO draws 4.5 mA a differential core 1.8 V supply.

A novel two-stage Doherty power amplifier (PA) was designed and fully integrated on a 0.25-μm GaN SiC monolithic microwave circuit die with dimension of 3.3 × 2.6 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> to build small-cell base stations. An asymmetric configuration adopted for the stage reversed uneven input splitting network better performance. To improve linearity, third-order intermodulation distortion (IMD3) minimized by...

To meet the increasing demand for 5G high data-rate communications, millimeter-wave frequency bands are expected to be utilized. However, existing channel models not applicable predict behaviors in these bands. In this paper we investigate model parameters including path loss exponents, delay and angular spread, clustering based on measurements collected urban microcell environments at 28 38 GHz. Our measurement data were obtained with a wideband sounder equipped only an omnidirectional...

This study presents a high-linearity K - band single-pole double-throw (SPDT) switch with asymmetric topology in 65-nm CMOS process for 5G applications. To simultaneously obtain high power-handling capability and isolation the Tx Rx modes, respectively, we propose an SPDT using stacked-transistor technique. In both Tx/Rx proposed operates insertion loss of less than 2.1 dB better 22.5 frequency range 20–25 GHz. At 22 GHz, measurement results input 1-dB compression point (IP1 dB) are 32.5 4.7...

In this letter, we propose and demonstrate a digitized intermediate frequency (IF)-over-fiber transmission system based on the delta-sigma modulation technique as means of digitizing an analog IF signal. Using realized 130-nm CMOS, two-level third-order low-pass modulator (DSM) chip operating at 622.08 MHz, 64-Quadrature Amplitude Modulation long-term evolution (LTE) 10-MHz signal was successfully digitized, transported over emulated digital fiber-optic link, analyzed in terms spectra, error...

This letter presents a current-reused V-band low-noise amplifier (LNA) with double-transformer-coupling technique in 65nm CMOS technology. A couple of common-source (CS) stages are stacked to share current, and the double transformers used as an RF signal path between CS for both gain stability considerations. The LNA has three CS-CS stages, achieves peak 31.4 dB, minimum noise figure (NF) 4.7 P1dB -2 dBm over 62.9-67 GHz power consumption 6 mW. chip size is 0.66 × 0.90 mm <sup...

In this letter, we present a linear InGaP/GaAs HBT power amplifier (PA) with parallel-combined transistors for small-cell applications. Ballast resistors bypass and capacitors are employed in transistors. When the set to appropriate values, IMD3 components of found be out phase each other by 180° canceled at output. The experimental results show that proposed PA produces saturated output 33.5 dBm 0.88 GHz, power-added efficiency (PAE) 46.1% 5-V supply voltage. To validate effectiveness...

This paper presents an approach to maximize the gain and power-added efficiency (PAE) of a Doherty power amplifier (PA) using 0.25 μm GaN pHEMT. The conventional carrier PA has input matching for R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OPT</sub> load does not deliver 3 dB higher with 2R due mismatch it degrades PAE PA. To solve problem, match is optimized at back-off level output load, while mismatched high level. A concept designed...

This paper proposes a CMOS linear power amplifier (PA) design scheme for IEEE 802.11g (WLAN) application. The proposed PA consists of programmable gain and high stage which is composed main with class AB bias an auxiliary C bias. Based on the un-even scheme, can improve linearity reduce current consumption in low region. It fabricated TSMC 40 nm standard RF process. measurements show that designed reaches 1 dB compression output 24.6 dBm peak drain efficiency 38% 3.3 V supply at 2.4 GHz...

In this study, an mm-wave band complementary metal–oxide–semiconductor (CMOS) power amplifier (PA) with a two-stage differential structure was designed. An analysis of the designed PA is presented and new proposed to eliminate possibility oscillation in PA, which has high gain output power. The driver stage consists pair cascode amplifiers can be advantageously applied beamforming systems as phase converted 0°/180° ON/OFF common-gate (CG) bias voltage. three-stacked obtain stability improved...

Two ∆Σ-modulated digital radio-over-fiber (DRoF) transmission systems that employ a multi-pulse Manchester encoder are proposed and experimentally evaluated. With two-step modulation process comprised of ∆Σ encoding, high frequency replica or image ∆Σ-digitized analog communication signal can be transmitted without significant power loss. This is achieved by exploiting the spectral characteristics modified code. For comparative analysis, conventional ∆Σ-modulation-based DRoF system also...

A frequency reconfigurable dipole antenna based on a silicon radiator is presented. The activated with the aid of highly dense solid-state plasma by injecting carriers into intrinsic region p-i-n diodes. fabrication and design guideline this are described. When or deactivated, length arm changes, which means that operating reconfigurable. all channels in activated, tuned from 6.3 GHz to 4.9 GHz. measured tunable bandwidth our fabricated approximately 31%, practical value comparison...

Propagation characteristics of millimeter-wave are being widely studied for utilization the fifth generation (5G) mobile communication systems. To overcome severe path loss on high frequency band, highly directive antennas or beamforming techniques using large array can be used to establish a reliable link between transmitter and receiver. In this paper, recently conducted outdoor channel measurement directional horn antenna in 28GHz band is introduced. The campaign has been typical urban...

Highly directive antennas or various beamforming techniques using large antenna arrays are expected to be adopted for overcoming the severe path loss on millimeter-wave bands. This paper investigates effect of beamwidth channel characterization and modeling. The indoor measurement campaigns were performed a wideband sounder in frequency band 28 38 GHz. large-scale parameters such as root mean square (RMS) delay spread angular arrival corresponding extracted from measured data. Finally, we...

This paper presents the possibility verification of a drone detection radar based on pseudo random binary sequence (PRBS). It contains design probing signal and resultant specifications radar, measurement setup using commercial generator/analyzer antennas, laboratory/outdoor measurements. Measurements in 2 GHz band with 6 dBm transmit condition show at range over 100 m.

This paper presents a gallium nitride (GaN)-based hybrid current-mode class-S (CMCS) power amplifier (PA) using bandpass delta-sigma modulator (BPDSM) for 955-MHz LTE signal. To enhance the drain efficiency of CMCS PA, chip-on-board (COB) technique, which can reduce external parasitic components packaged transistor and allow fast switching operation at high frequencies by minimizing distortion pulse waveform, is adopted. Also, GaN Schottky barrier diodes are fabricated in-house to protect...

A single RF chain multi-input multi-output (MIMO) antenna using low-power CMOS switches is presented for beam-space transceiver systems. discrete switch simplifies the design and implementation of reconfigurable loads DC bias circuitries, does not require complicated external matching components. The proposed approach also provides a compact structure optimized multiplexing multiple signals. measured reflection coefficient, peak gain, total efficiency are -12 dB, 3.9 dBi, 85%, respectively....

A loop stability compensation technique for continuous-time common-mode feedback (CMFB) circuits is presented. Miller capacitor and nulling resistor in the network provide a reliable stable operation of fully-differential operational amplifier without any performance degradation. The designed 130 nm CMOS technology, achieves simulated 57 dB open DC gain, 1.3-GHz unity-gain frequency 65° phase margin. Also, bandwidth margin CMFB are 51 dB, 27 MHz, 76°, respectively.

This paper describes the fabrication and characterization of a reconfigurable Yagi-Uda antenna based on silicon reflector with solid-state plasma. The reflector, composed serially connected p-i-n diodes, forms highly dense plasma by injecting electrons holes into intrinsic region. When this is turned on, front-realized gain increases more than 2 dBi beyond 5.3 GHz. To achieve large increment, structure carefully designed aid semiconductor device simulation simulation. By using an aluminum...