A5082621556- Graphene research and applications
- Quantum and electron transport phenomena
- Topological Materials and Phenomena
- 2D Materials and Applications
- Synthesis and Properties of Aromatic Compounds
- Advanced Semiconductor Detectors and Materials
- Physics of Superconductivity and Magnetism
- Supramolecular Self-Assembly in Materials
- Quantum optics and atomic interactions
- Semiconductor materials and devices
- Polydiacetylene-based materials and applications
- Advanced Optical Sensing Technologies
- Advanced Condensed Matter Physics
- MXene and MAX Phase Materials
- Quantum chaos and dynamical systems
- Metamaterials and Metasurfaces Applications
- ZnO doping and properties
- Photonic Crystals and Applications
- Carbon Nanotubes in Composites
- Ocular and Laser Science Research
- Semiconductor Quantum Structures and Devices
- Quantum Mechanics and Non-Hermitian Physics
- Quantum Electrodynamics and Casimir Effect
- Nonlinear Optical Materials Studies
- Spectroscopy and Quantum Chemical Studies
Nantong University
2023-2025
Henan Agricultural University
2024
Jiangmen Central Hospital
2024
Linyi University
2014-2023
Yantai University
2020
Goddard Space Flight Center
2016
Wright-Patterson Air Force Base
2014
U.S. Air Force Research Laboratory Materials and Manufacturing Directorate
2014
Shanghai Institute of Technical Physics
2006-2013
Sichuan University
2010
We report on the concentration, chemical bonding, and etching behavior of N at SiC(0001)/SiO2 interface using photoemission, ion scattering, computational modeling. For standard NO processing a SiC MOSFET, sub-monolayer nitrogen is found in thin inter-layer between substrate gate oxide (SiO2). Photoemission shows one main related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that assigned bound three silicon neighbors, second nearest neighbors...
We study the subgap transport through antiferromagnet/superconductor (AF/S) and antiferromagnet/superconductor/antiferromagnet (AF/S/AF) junctions controlled by electric field in a generic buckled honeycomb system, such as silicene, germanene, stanene. In presence of antiferromagnetic exchange field, spin-valley polarized half-metallic phase can be achieved system due to spin-orbit coupling, which affords an opportunity generate pure crossed Andreev reflection (CAR). It is found that CAR...
We studied the spin and valley transports magnetoresistance effect in a ${\mathrm{MoS}}_{2}$ junction with quantum well inserted between gate voltage ferromagnetic ${\mathrm{MoS}}_{2}$, which can apply generally to other transition metal dichalcogenides same crystal structure. In absence of well, broken inversion symmetry spin-orbit coupling for could give rise fully spin- valley-polarized conductance parallel configuration, while there is no polarization antiparallel configuration. The...
We propose a new scheme to achieve an effective spin/valley filter in silicene with extended line defect on the basis of spin–valley coupling due intrinsic spin-orbit (SOC). The transmission coefficient states is seriously affected by SOC. When perpendicular magnetic field applied one side defect, valley state will experience backscattering, but other not; this leads high polarization all directions. Moreover, can be enhanced 96% aid electric field.
Abstract In this paper, we theoretically investigate the manipulation of valley-polarized currents and optical-like behaviours Dirac fermions in graphene with single line defect. After introduction a local uniaxial strain, valley transmission probability increases plateau emerges large angle range. Such phenomenon originates from resonant tunnelling, strain act as an antireflective coating for states, analogous to optical device. This indicates that perfect polarization can occur larger...
Based on Floquet scattering matrix theory, the electron transmission through a periodic time-dependent potential in monolayer graphene is studied. It found that quantum interference between bound states and continuum due to interaction of with oscillating field can result occurrence asymmetric Fano-type resonance transmission. The could be controlled by adjusting momentum parallel well, oscillation frequency, amplitude. These results may useful for probing energy spectrum, internal...
The valley-dependent energy band and transport property of graphene under a periodic magnetic-strained field are studied, where the time-reversal symmetry is broken valley degeneracy lifted. considered superlattice composed two different barriers, providing more degrees freedom for engineering electronic structure. electrons near $K$ ${K}^{\ensuremath{'}}$ valleys dominated by effective superlattices. It found that bands both symmetric with respect to...
We study the spin- and valley-dependent energy band transport property of silicene under a periodic potential, where both spin valley degeneracies are lifted. It is found that Dirac point, miniband, gap, anisotropic velocity, conductance strongly depend on indices. The extra points appear as voltage potential increases, critical values which different for electron with spins valleys. Interestingly, velocity greatly suppressed due to electric field exchange field, other than gapless graphene....
Based on the tight-binding formalism, we study effect of side potential spin- and valley-related electronic property $2\mathrm{D}$ honeycomb lattices with intrinsic spin-orbit coupling, such as silicene germanene. The is composed field exchange applied boundaries zigzag nanoribbon. It found that could greatly affect helical edge states different spin indices valley are locked to each other. By adjusting ribbon width, system shows a quantum spin-valley Hall effect, valley-polarized...
We study the subgap transport through a ferromagnet/Ising superconductor/ferromagnet (F/ISC/F) junction by solving Bogoliubov--de Gennes equations. It is found that crossed Andreev reflection (CAR) and local (LAR) depend strongly on spin-polarized F, magnetization direction, Ising superconducting phase. For same directions of two F leads, equal-spin CAR could take place due to spin-flip mechanism induced spin-orbit coupling equal-spin-triplet pairing. Both LAR exhibit remarkable...
The spin/valley polarization in silicene with extended line defects is investigated according to the chiral filtration mechanism. It shown that inner-built quantum Hall pseudo-edge states identical chirality can serve as a filter weak magnetic field and transmission process restrained/strengthened for reversed/identical chirality. With two parallel defects, which act natural filtration, effect greatly enhanced, 100% be achieved.
We study the band structure and transport property of a zigzag silicene nanoribbon when electric fields are applied to edges. It is found that bending could be induced controlled by antisymmetric edge fields, which can understood based on wave functions states. The highest valence lowest conduction coexist in band-bending region. With narrowing potentials, increases gradually. When become symmetric, an asymmetric gap at Dirac points obtained due intrinsic spin-orbit interaction, suggesting...
We discuss the stationarity of generator G for gauge symmetries in two directions. One is to motion equations defined by total Hamiltonian HT, and gives that number independent coefficients not greater than primary first-class constraints, Noether conserved charges too. The other variances canonical variables deduced from G, Lagrangian multipliers contained extended HE. And a second-class constraint generated may imply new which can be combined introducing constraints. Finally, we supply...
We demonstrate the tunability of two-photon absorption (TPA) coefficient by adjusting electric field in a HgCdTe (MCT) photodiode with cutoff wavelength 5.2μm. The TPA was measured using picosecond pulsed laser 7.92μm. An enhancement occurs space charge region MCT pn junction, which can be attributed to Franz–Keldysh effect induced built-in field. By applying reverse bias intensify field, is found further enhanced factor 18.9. This dependence has been fairly interpreted junction model included.
The anti-Klein tunneling at normal incidence is a typical property of bilayer graphene. We study the resonant through multiple electrostatic barriers in graphene, and find that line-type resonance with perfect transmission caused by quasibound states can occur incidence, leading to destruction tunneling. presents -fold splitting n-barrier, while Fabry–Perot shows n-fold splitting, because they originate from different states. electronic states, region, features both resonances are limited...
Abstract Antiferromagnetic materials are regarded as the outstanding candidates for next generation of spintronics applications thanks to numerous interesting features. We theoretically study spin and valley transport in transition metal dichalcogenides present antiferromagnetic exchange field. It is found that dependent band gap can be controlled by The system could become a spin-valley half metal, where certain electron metallic state other electrons insulating states....
We theoretically study the Andreev reflection (AR) in AA-stacked bilayer graphene-superconductor junction. AABG has a linear gapless energy band with two shifted Dirac cones and electronic states are described by cone indices. The results indicate that property of AR strongly depends on degree freedom. In absence interlayer potential difference, only intracone normal (NR) could occur, intercone process is forbidden. By adjusting potential, can be specular (SAR) one it retro-AR (RAR) other...
Using the transfer-matrix formalism, resonance splitting effect of Dirac electrons through two types magnetic superlattices in graphene is studied theoretically. The numerical results show that transmission presents (n − 1)-fold for both with n-barrier, similar to Schrödinger semiconductor superlattices. It believed possess a general rule n-barrier superlattices, which corresponding vector potential periodic field. strong field can be used as very efficient wave-vector filter electrons....