A5076061264- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Ion-surface interactions and analysis
- Nanowire Synthesis and Applications
- Advanced Surface Polishing Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Polish Historical and Cultural Studies
- Polish Law and Legal System
- Rare-earth and actinide compounds
- Advanced ceramic materials synthesis
- Force Microscopy Techniques and Applications
- Electron and X-Ray Spectroscopy Techniques
- Metal and Thin Film Mechanics
- Intermetallics and Advanced Alloy Properties
- Transition Metal Oxide Nanomaterials
- Microstructure and mechanical properties
- Diamond and Carbon-based Materials Research
- Polish Legal and Social Issues
- Advancements in Semiconductor Devices and Circuit Design
- High-pressure geophysics and materials
University of Warsaw
2011-2024
Military University of Technology in Warsaw
2017-2023
Rzeszów University of Technology
2021
Polish Institute of International Affairs
2018-2021
University of Security Management in Košice
2020-2021
Institute of Political Science
2018
ORCID
2017
Uniwersytecki Szpital Kliniczny w Olsztynie
2011-2016
University of Warmia and Mazury in Olsztyn
2016
Institute of Electron Technology
2004-2013
The local order around Mn atoms in the Mn-implanted Si samples, with ferromagnetic properties, has been investigated by use of x-ray-absorption spectroscopy techniques. Analysis both extended fine structure and x-ray absorption near-edge spectra clearly indicates that ions are located neither substitutional nor interstitial position lattice, but depending on how samples were prepared, they have five to eight near neighbors.
The magnetic structures of UIn3 and UTl3 at 4.2° K has been determined by neutron diffraction using powder samples. In both compounds the unit cell is formed doubling chemical in three directions. moment alignment uranium ions opposite direction adjacent (111) planes. μ was found to be 1.60 BM about 1 UIn3. Néel temperature (90 ± 5)° K. stability UIn3, as well UPb3 discussed terms molecular field theory. An Pulverproben wurden die magnetischen Strukturen von und bei 4,2° durch...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Sergey V. Ovsyannikov, Igor Korobeinikov, Natalia Morozova, Andrzej Misiuk, Nikolai Abrosimov, Vladimir Shchennikov; "Smart" silicon: Switching between p‐ n‐conduction under compression. Appl. Phys. Lett. 6 August 2012; 101 (6): 062107. https://doi.org/10.1063/1.4742345 Download citation file: Ris (Zotero)...
We have used local vibrational mode (LVM) spectroscopy to monitor the formation of oxygen-related thermal double donors (TDDs) at 450 °C and their annihilation 650 in carbon-lean Czochralski-grown (Cz-) Si crystals. A few samples were treated under high hydrostatic pressure. It is found that TDDs results not only a partial recovery interstitial oxygen, but also appearance number new O-related LVM bands range 990–1110 cm−1. The positions these lines shapes are identical those observed for...
Iron nanoparticles embedded in MgO crystals were synthesized by Fe+ ion implantation at an energy of 100 keV and varying fluences from 3×1016 to 3×1017 cm−2. Investigations structural magnetic properties Fe have been performed using magnetometry, x-ray diffraction, transmission electron microscopy, Mössbauer spectroscopy, as well theoretical Preisach modeling bistable systems. It has found that α- γ-Fe are formed for all fluences. The content the α-Fe phase increases higher after annealing....
It has been established that the oxygen aggregation processes in Czochralski-grown silicon (Cz–Si) at 450 °C are strongly affected by high hydrostatic pressure. We observed enhanced production of shallow thermal donors with ionization energies 30–40 meV and deep ≈EC−0.1 eV under a pressure 1 GPa. In contrast, concentration well-known double was found to be much less than Cz–Si heat treated without stress. The latter effect may associated involvement self-interstitials their formation. other...
Abstract The formation kinetics of Thermal Double Donors, a dominant family thermal donors in Czochralski‐grown silicon annealed at T < 600 °C, is studied detail. A striking enhancement effect hydrostatic pressures about 1 GPa on their processes, even temperature region instability these donor centers = °C under normal conditions, clearly demonstrated. experimental data obtained the present work are agreement with recent theoretical calculations oxygen diffusion and agglomeration...
We have studied the influence of hydrostatic pressure during annealing on intensity visible photoluminescence (PL) from thermally grown SiO2 films irradiated with Si+ ions using double-energy implants at 100 and 200 keV ion doses ranging 1.2×1016 to 6.3×1016 cm−2. Postimplantation anneals been carried out in an Ar ambient temperatures Ta 400 450 °C for 10 h both atmospheric pressures 0.1, 10, 12, 15 kbar. It has found that ultraviolet (∼360 nm), blue (∼460 red (∼600 nm) PL emission bands...
Isostatic direct nitriding at high pressure and temperature was used to obtain superconducting MoNx samples with critical temperatures. The of the hexagonal cubic structure were prepared pressures up 7 GPa temperatures 2300 K. highest 15.9 K found for MoN sample produced 1.6 1720 This is reported any Mo-N now.
The effect of stress (exerted by hydrostatic pressure argon ambient enhanced up to 1.2 GPa) on the creation oxygen-related defects in annealed Czochralski grown silicon (Cz-Si) was investigated. Concentrations oxygen interstitials and dislocations Cz-Si samples with before-created nucleation centres for precipitation were markedly lower after treatment at 1120 1230 K, comparison ones pressure. Increased X-ray diffuse scattering intensity diminished photoluminescence pressure-annealing...