Yukio Suzuki

ORCID: 0000-0003-1415-7415
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Advanced MEMS and NEMS Technologies
  • Advanced Surface Polishing Techniques
  • 3D IC and TSV technologies
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Radioactive element chemistry and processing
  • Silicon and Solar Cell Technologies
  • GaN-based semiconductor devices and materials
  • Advanced Statistical Methods and Models
  • Advanced Sensor and Energy Harvesting Materials
  • Integrated Circuits and Semiconductor Failure Analysis
  • Metal Alloys Wear and Properties
  • Mechanical and Optical Resonators
  • Heat Transfer and Boiling Studies
  • Semiconductor materials and interfaces
  • Chemical Synthesis and Reactions
  • Photonic and Optical Devices
  • Optical Coatings and Gratings
  • Modular Robots and Swarm Intelligence
  • Electronic Packaging and Soldering Technologies
  • Nanowire Synthesis and Applications
  • Radiation Effects in Electronics
  • Copper Interconnects and Reliability
  • Chemical Synthesis and Characterization
  • Semiconductor Lasers and Optical Devices

Tohoku University
1989-2024

Tohoku University Hospital
2017

Tohoku Institute of Technology
2014

Semiconductor Energy Laboratory (Japan)
2014

Shizuoka University
1994-2011

Aikoku Gakuen University
2010

Kanagawa Institute of Technology
2005

LIFE Research Institute
2003

Dai-ichi Life Insurance (United States)
2003

Ion Technology Center (Japan)
2002

GaSb and GaSbxAs1-x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped showed p-type conduction, Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of electrical property these revealed that many defects are contained in epitaxial layer near interface between substrate. with entire composition prepared, energy gap measured photoabsorption shows downward bowing function composition.

10.1143/jjap.17.2091 article EN Japanese Journal of Applied Physics 1978-12-01

10.1007/bf02900742 article EN Annals of the Institute of Statistical Mathematics 1954-06-01

Twenty-three kinds of coumarin derivatives were prepared and their analgesic hypnotic actions examined using mice. The potency toxicity each drug compared by the values HD50 (hypnotic dose), SD50 (sedative dose) LD50 (lethal which determined van der Waerden's “Flächemethode” Behrens-Kärber method. As a result, following assumed: (1) double bond between-3-and 4-positions in nucleus plays an important rôle for appearance efficacy. (2) was found to be order with α-pyrone ring condensed...

10.1248/yakushi1947.71.7_686 article EN YAKUGAKU ZASSHI 1951-01-01

In this study, we introduce an innovative approach to vacuum-encapsulation of MEMS resonators using Silicon Migration Seal (SMS) technology, a novel wafer-level vacuum packaging method. SMS utilizes silicon reflow phenomena under high-temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$&gt;$</tex-math> </inline-formula> 1000 notation="LaTeX">$^{\circ}$</tex-math> C) hydrogen environments seal...

10.1109/jmems.2024.3382768 article EN cc-by Journal of Microelectromechanical Systems 2024-04-12

In this paper, the design, fabrication and evaluation of a novel piezoelectric MEMS varifocal liquid lens are presented. The device consists thin film PZT actuator integrated with lens, featuring new design modified disk-shaped that enhances overall displacement range. primary innovation lies in simplifying assembly process between liquid/soft actuator, eliminating need for vacuum bonding. Two types materials, ionic gel silicone oil, were investigated different integration configurations to...

10.1016/j.sna.2024.115732 article EN cc-by-nc Sensors and Actuators A Physical 2024-07-27

This study has opened a possibility to fabricate through silicon vias (TSV) in LSI wafer available by commercial multi-project (MPW) service and integrate the MEMS bonding. 300 μm deep Cu annular type TSV were fabricated TSMC 0.18 CMOS MPW cut into 4" diameter. The developed process managed mechanically fragile property of laser-ablated low stress TEOS PECVD SiO2 backfilling, surface planarization, temporally support etc. integrated Au-Au thermocompression bonding at 300°C, completed device...

10.1109/memsys.2017.7863515 article EN 2017-01-01

Abstract Polypropylene films were treated with the CHCI 3 plasma, and their chemical composition was analyzed XPS ART IR spectroscopy. The plasma irradiation made polypropylene hydrophilic. advancing contact angle decreases from 95° for untreated to about 73° plasma‐treated films. In irradiation, chlorination occurs, CCl, CCl 2 , units are formed in Simultaneously chlorination, unsaturated (CC conjugated CC units) dehydrogen of chlorinated products, but oxygen incorporation into is low....

10.1002/app.1994.070511304 article EN Journal of Applied Polymer Science 1994-03-28

This paper reports key process technologies for the application of epitaxial polysilicon (epi-poly-Si) to scanning micromirrors, including low-stress epi-poly-Si deposition, chemical mechanical polishing (CMP) and fabrication trench isolations in film. Epi-poly-Si thicker than 20 µm was deposited at a rate 300 nm/min using an atmospheric pressure reactor. The residual film stress 57.2±1.4 MPa (compressive), gradient 1.41±0.84 MPa/µm (more tensile toward surface) as-deposited 21 thick average...

10.1541/ieejsmas.133.223 article EN IEEJ Transactions on Sensors and Micromachines 2013-01-01

Vapor hydrogen fluoride (vHF) sacrificial SiO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{2}$</tex-math> </inline-formula> etching is a crucial process for wafer-level packaging based on silicon migration seal (SMS) technology. In this study, by using test samples with several kinds of patterns and structures, the characteristics vHF through release holes diameter 0.5 notation="LaTeX">$\mu...

10.1109/jmems.2023.3281854 article EN cc-by Journal of Microelectromechanical Systems 2023-06-20

This paper presents the bond strength of Si-SiO2 direct-bonded wafers characterized by vapor HF etching and discusses effects several bonding conditions. Vapor is used for release free-standing MEMS structures, its controllability dependent on strength. However, mechanical methods such as crack opening method not valid this purpose. A comparative study conditions, including type thermal annealing, annealing temperature, gas plasma activation, was conducted using HF. The results reveal that...

10.1016/j.sna.2023.114691 article EN cc-by-nc-nd Sensors and Actuators A Physical 2023-09-28

10.1007/bf02869533 article EN Annals of the Institute of Statistical Mathematics 1966-12-01

We have developed a true MEMS speaker with Si-parylene composite diaphragm and PZT actuator. The is closed form preventing air leakage highly deformable by 10 µm thick parylene corrugation. actuator composed of high quality 5 rated driving voltage higher than 50 V. the were stacked bonded. In ear simulator environment, SPL (sound pressure level) 120 dB was achieved at 4.2 kHz applying 15 V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</inf>...

10.1109/mems51670.2022.9699539 article EN 2022 IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS) 2022-01-09

A sealing vacuum level better than 10 Pa was achieved by Silicon Migration Seal (SMS) technology without film deposition or using a getter for the first time. SMS utilizes silicon reflow phenomena in hydrogen at high temperature (>1000°C) to close release holes. In this study, we confirmed diaphragms fabricated device wafer. And samples were placed chamber with diaphragm pressure gauge evaluate of sealed cavity. The got detection limit about after 35 hours annealing nitrogen, during which...

10.1109/mems51670.2022.9699602 article EN 2022 IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS) 2022-01-09

10.1007/bf02865907 article EN Annals of the Institute of Statistical Mathematics 1963-12-01

Abstract Silicon migration seal (SMS) wafer‐level packaging is proposed for high vacuum encapsulation of MEMS. The sealing vent holes possible based on silicon surface effect at 1100°C in 100% hydrogen ambient without deposition, if the size properly designed. feasibility SMS was experimentally demonstrated using 4‐inch wafers. Hermetic confirmed after 168 hours from process by diaphragm displacement cap wafer.

10.1002/ecj.12283 article EN cc-by-nc Electronics and Communications in Japan 2020-11-16

Abstract A liquid‐fluidized bed was used to separate a pure material from mixture. quantity of relatively large sized immersed in an inert‐particle fluidized and the behavior materials examined for different liquid velocities. In particular, volume fraction varied its effect on separation characteristics examined. The floats when density is lower than apparent bed, regardless material. can be adjusted by changing velocity. upper portion affect properties below them, i.e., void decreases...

10.1002/ceat.201000027 article EN Chemical Engineering & Technology 2010-06-02

MEMS resonators were vacuum-encapsulated by Silicon Migration Seal (SMS) technology. SMS is new wafer-level vacuum packaging technology, which utilizes silicon reflow phenomena to close release holes in hydrogen (H <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) environment at high temperature (>1000°C). In this study, we first demonstrated the encapsulation of a resonator made on an SOI wafer, one most standard structures for inertial...

10.1109/mems49605.2023.10052449 article EN 2023-01-15

Abstract A liquid‐fluidized bed of inert particles was used to separate a pure object from mixture. One (binary solid‐liquid‐fluidized bed) or two (tertiary types objects with relatively large‐sized were immersed in an inert‐particle bed, and the behavior observed for different liquid velocities. The void fraction apparent density suspension predicted by considering effect change position prediction method, which considers minimum fluidization velocity, accurately expressed changes bed....

10.1002/ceat.201100012 article EN Chemical Engineering & Technology 2011-04-26

10.1007/bf01737394 article EN Annals of the Institute of Statistical Mathematics 1959-12-01

The present paper reports a 2.8-mm-square surface-mountable MEMS-on-LSI integrated 3-axis tactile sensor for robot applications, which incorporates sensing and signal processing in single chip. MEMS part has quad-seesaw-electrode structure fully-differential capacitive force sensing. LSI is an original platform equipped with deep annular-type through silicon vias (TSVs). A multi-project wafer was processed after fabrication foundry. the were by Au-Au thermocompression bonding. output digital...

10.1109/transducers.2017.7994095 article EN 2017-06-01
Coming Soon ...