A5101827611- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
- Copper-based nanomaterials and applications
- Conducting polymers and applications
- Organic Electronics and Photovoltaics
- nanoparticles nucleation surface interactions
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Nanostructures and Photoluminescence
- Thermal Expansion and Ionic Conductivity
- Semiconductor materials and interfaces
- Force Microscopy Techniques and Applications
- Advancements in Solid Oxide Fuel Cells
- Semiconductor materials and devices
- Nonlinear Optical Materials Research
Institut Photovoltaïque d’Île-de-France
2017-2024
Institut de France
2016-2024
Électricité de France (France)
2019-2022
Institut Pprime
2018-2019
Centre National de la Recherche Scientifique
2014-2017
Chimie ParisTech
2014-2017
Institut de Recherche pour le Développement
2016
In this work, the fabrication of MoO
A proper control of Ga composition gradient is mandatory to achieve high efficiency Cu(In,Ga)Se2 (CIGS) solar cells. Steeper gradients are usually obtained when CIGS deposited at low temperatures (<450 °C) on polymer substrates such as polyimide with a three-stage process. As steep gallium considered detrimental carrier transport and reduces cells efficiency, modification the deposition process has be implemented. In this study, we analyze growth properties by coupling XRD, Raman...
Cu(In 1− x ,Ga )Se 2 (CIGS) thin films can be deposited with a high versatility of composition by hybrid one‐step co‐sputtering/evaporation process. In this paper, plasma analysis is performed an optical emission spectroscopy non‐contact tool, following light emissions from different species: sputtered copper, gallium, indium but also evaporated selenium. The variations characteristics are correlated target self‐bias voltage. Hence, the selenium flow threshold avoiding poisoning and main...
Abstract This work explores a strategy to bring together the advantages of co‐evaporation and sputtering by developing hybrid co‐sputtering/evaporation process, where copper, indium, gallium are sputtered with thermal evaporation selenium. A 3‐stage process for Cu(In,Ga)Se 2 (CIGS) thin films solar cells has been developed controlling deposition parameters (temperature, power, evaporation). (In,Ga) Se 3 layers deposited in first stage, followed Cu − x Se/(In,Ga) layers. Material properties...
In this work, we have developed a hybrid one-step co-sputtering/evaporation Cu(In,Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> process, where Cu, and Ga are sputtered simultaneously with the thermal evaporation of selenium, thus avoiding use H Se. An appropriate control selenium flux is very important to prevent target poisoning hence some material variations. Indeed, CIGS composition must be rigorous ensure reproducible solar...
Passivating contacts are becoming a mainstream option in current photovoltaic industry due to their ability provide an outstanding surface passivation along with good conductivity for carrier collection. However, integration usually requires long annealing steps which not desirable industry. In this work we study PECVD as way carry out all deposition steps: silicon oxide (SiO x ), doped polycrystalline (poly-Si) and nitride (SiN :H), followed by single firing step. Blistering of the poly-Si...
Major Research and development in the field of photovoltaics is currently focused on commercialization perovskite technology for solar energy market. Although recent advances performance enhancement, this must overcome long-terms stability issues before its commercialization. Currently, research are reliability under continuous illumination damp heat conditions. Perovskite materials, other hand, show different behavior real operating In work, we interested cells modules outdoor conditions...
Abstract Compared to current c‐Si solar cell technologies, fired passivating contacts (FPCs) can reduce the thermal budget of fabrication process. In this study, a simplified process flow for these is investigated along with use two hole transport materials: p‐type nanocrystalline silicon ((p) nc‐Si:H) and oxide nc‐SiO x :H). More specifically, passivation properties provided by FPC stack are assessed at different stages manufacturing. The hydrogenation studied using in situ modulated...