This study explores the ionic dynamics in 2D/3D perovskite solar cells, which are known for their improved efficiency and stability. The focus is on impact of halide choice 3D perovskites treated with phenethylammonium salts (PEAX, X = Br I). Our findings reveal that light heat drive migration these structures, PEA+ species diffusing into film PEABr-treated samples. Mixed-halide show interdiffusion, bromine migrating to surface iodine film. Cathodoluminescence microscopy reveals localized 2D...

The development of industrially relevant deposition processes for efficient, stable, and inexpensive charge extracting layers is crucial the commercialization perovskite solar cells (PSCs). This work demonstrates, first time, copper thiocyanate (CuSCN) as a low‐cost reliable hole‐transport layer using slot‐die coating. Methyl ethyl sulfide thereby used an asymmetric cosolvent to significantly increase solubility CuSCN in utilized ink compared traditional pure diethyl sulfide‐based solutions....

Abstract Thin films provide nanoscale confinement together with compatibility photonic and microwave architectures, making them ideal candidates for chip-scale quantum devices. In this work, we propose a thin film fabrication approach yielding the epitaxial growth of Eu 3+ doped Y 2 O 3 on silicon. We combine two most prominent deposition techniques: chemical vapor (CVD) molecular beam epitaxy (MBE). report sub-megahertz optical homogeneous linewidths up to 8 K dopants in film, lowest value...

The current-gain cutoff frequency performance of pseudomorphic InGaAs/AlGaAs (20% InAs composition) high-electron-mobility transistors (HEMTs) on GaAs is compared to that lattice-matched InGaAs/InAlAs HEMTs InP. (f/sub t/) characteristics as a function gate length (L/sub g/) indicate the f/sub t/-L/sub g/ product approximately 26 GHz- mu m in 23% higher than 21 HEMTs. also 46% conventional GaAs/AlGaAs ( 18 m). These data are very useful improving device for given length.< <ETX...

The barrier heights of several n-InAlAs/metal Schottky contacts are discussed. A thin-Pt/Ti/Pt Au multilayer gate is proposed for InP-based InAlAs/InGaAs HEMTs. Its height was measured as 0.83 eV, and it shows good threshold voltage stability. Performance measurements an enhancement-mode HEMT fabricated using a 1.1- mu m-long indicate 0.05 V transconductance 540 mS/mm.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Abstract The reliability of CIGS solar systems in agricultural environments was investigated using an accelerated aging test. Both complete cells and representative stacks selected layers interfaces were exposed to humidity temperature variations for 9 14 days with without ammonium sulfate (NH 4 ) 2 SO , aerosol pollutant activities. performance evolution evaluated by J‐V curves EQE measurements. After days, the presence led a loss 58%, significantly higher than 37% observed pollutants....

Rare earth ions hosted in solids are good candidates for quantum technologies due to their chemical stability and optical spin transitions exhibiting long coherence lifetimes. While bulk oxide crystals usually the preferred host material, development of a scalable silicon-compatible thin film platform would be desirable. In this paper, we report on growth Y2(1−x)Eu2xO3 films silicon full range Eu3+ concentration by direct liquid injection vapor deposition (CVD). Our sub-micrometer...

We have investigated nonalloyed ohmic contacts on HEMT's using a highly conductive n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -InGaAs layer. The minimum specific contact resistance obtained was 4.8 × 10 xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> Ω.cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and the IV characteristics were equal to or better than those of conventional with alloyed contacts. maximum...

Large-area photochemical selective dry etching has been developed for use in InGaAs/InAlAs heterojunction fabrication involving CH/sub 3/Br gas and a low-pressure mercury lamp. The etch rate of the InGaAs layer was 17 nm/min ratio to InAlAs around 25 1. recess performed N-InAlAs/InGaAs HEMT's on 3-in wafer using etching. standard deviation threshold voltage across 18 mV at -0.95 V, transconductance 456 mS/mm obtained 1.1- mu m-long gate within 14.9 mS/mm.< <ETX...

Encapsulating the active layer containing rare-earth ions between undoped thick layers allows limiting interfacial reactions during thermal annealing and leads to narrower homogeneous inhomogeneous linewidths.

The authors studied the nonalloyed ohmic characteristics of HEMTs (high electron mobility transistors). At high integration levels, contacts were found to have two advantages: an extremely short length with low parasitic source series resistance and direct connection between source/drain gate same metal. propagation delay in a ring oscillator single-metal formed simultaneously was 37 ps/gate (L/sub g/=0.9 mu m). very metal just three contact holes made it possible reduce memory cell area...

The control of rare-earth ion doping profiles is a key challenge for several photonic applications and quantum technologies that require spatially localized emitters. In this work, we propose to use atomic layer deposition (ALD) followed by an annealing post-treatment localize europium emitters close the surface Y2O3 film or Y2SiO5 single crystal exploiting in-diffusion. Indeed, ALD conformal method can provide in-depth nanometer-scale positioning accuracy on large scale. However,...

High-speed n-InAlAs/InGaAs HEMT large-scale integrated circuits must have uniform device parameters. A selectively dry-etched n/sup +/-GaAs/N-InAlAs/InGaAs which has a very threshold voltage is discussed. Despite the high dislocation density at +/-GaAs layer, its performance excellent. For gate length of 0.92 mu m, maximum transconductance 390 mS/mm. The measured current-gain cutoff frequency 23.7 GHz, and oscillation 75.0 GHz. standard deviation across 2-in wafer as low 13 mV.< <ETX...

The high-speed operation of a one-channel output interface for single-flux quantum (SFQ) system has been demonstrated. consisted Josephson latching driver, room-temperature semiconductor amplifier, and decision circuit module. driver was fabricated by using 2.5-kA/cm/sup 2/ standard Nb junction process used to amplify an SFQ pulse into 5.5-mV level signal at 10 Gb/s. converted the nonreturn-to-zero having amplitude 1 V

Graphene has been employed as gate electrodes of n-channel silicon transistors. When the graphene is exposed and gas molecules adsorb on surface, work function changes depending species concentrations, thus changing threshold transistor. This novel graphene-gate sensor exhibits sensitivities more than one order magnitude higher those conventional resistivity-based sensors, easily detecting 7 ppb NO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Selective photochemical dry etching of GaAs layers on AlGaAs using HCl gas and InGaAs InAlAs CH3Br is studied. A low pressure mercury lamp was used as the deep UV light source. selectivity more than 150 for over 60 obtained.

Latching-type driver circuits integrated with high-temperature superconductivity (HTS) junctions and two types of resistor were fabricated. These could successfully perform latching operation by means a single-flux-quantum (SFQ) signal input. Ramp-edge-type HTS fabricated interface engineering showed hysteretic current-voltage characteristics under temperature 50 K. The critical current (I/sub c/) these 5-micron-wide was about 0.2 mA the I/sub c/R/sub n/ product 1.7 mV at 4.2 included...

Yttrium orthosilicate (Y2SiO5 - YSO) is one of the most promising crystals to host rare-earth (RE) ions for quantum technologies applications. In this matrix, they indeed exhibit narrow optical and spin linewidths that can be exploited develop memories or information processing capabilities. paper, we propose a new method grow RE doped silicate thin films on silicon wafers based direct liquid injection chemical vapour deposition (DLI-CVD). We optimize annealing conditions achieve formation...

Abstract Halide perovskite materials offer significant promise for solar energy and optoelectronics yet understanding enhancing their efficiency stability require addressing lateral inhomogeneity challenges. While photoluminescence imaging techniques are employed the measurement of opto‐electronic transport properties, going further in terms precision requires longer acquisition times. Prolonged exposure perovskites to light, given high reactivity, can substantially alter these layers,...

The performance is examined of a divide-by-four circuit based on DCFL-NOR gates using newly developed enhancement-mode N-InAlAs/InGaAs HEMT technology. A divider, with 1.2 μm long, had maximum clock frequency 5.8GHz and power dissipation 2.5mW/gate. It was found that the switching speed an InP-based 1.5 times faster than GaAs-based HEMT.

We proposed and successfully demonstrated a high-speed Josephson IC to semiconductor output interface circuit combining high electron mobility transistor (HEMT) amplifier high-voltage drivers successfully. developed 0.5-/spl mu/m gate 77-K wide-band analog monolithic HEMT for the interface. The device consisted of InGaP/InGaAs materials stable even at 77 K. has differential as first stage cancel out ground-level fluctuations in showed voltage gain 23 dB /spl sim/3-dB frequency 8 GHz. A...