S. Kuroda

ORCID: 0000-0002-9331-7976
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About
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Research Areas
  • Particle Accelerators and Free-Electron Lasers
  • Particle accelerators and beam dynamics
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Superconducting Materials and Applications
  • Radio Frequency Integrated Circuit Design
  • Advancements in Semiconductor Devices and Circuit Design
  • Gyrotron and Vacuum Electronics Research
  • Insect Utilization and Effects
  • Silkworms and Sericulture Research
  • GaN-based semiconductor devices and materials
  • Particle Detector Development and Performance
  • Integrated Circuits and Semiconductor Failure Analysis
  • Semiconductor materials and interfaces
  • Advanced Semiconductor Detectors and Materials
  • Photonic and Optical Devices
  • Microwave Engineering and Waveguides
  • Magneto-Optical Properties and Applications
  • Radiation Effects in Electronics
  • Advancements in Photolithography Techniques
  • Silicon and Solar Cell Technologies
  • Advanced Power Amplifier Design
  • Advanced X-ray Imaging Techniques
  • Thin-Film Transistor Technologies
  • Photocathodes and Microchannel Plates

The Graduate University for Advanced Studies, SOKENDAI
2016-2020

High Energy Accelerator Research Organization
2006-2020

Nippon Soken (Japan)
2016

European Organization for Nuclear Research
2014-2016

Université de Montréal
2010

Institute of Crop Science
2006-2008

Bio-oriented Technology Research Advancement Institution
2008

Oki Electric Industry (Japan)
1996-2005

Niigata Agricultural Research Institute
2003-2004

Family Inada (Japan)
2003-2004

A novel scheme for the focusing of high-energy leptons in future linear colliders was proposed 2001 [P. Raimondi and A. Seryi, Phys. Rev. Lett. 86, 3779 (2001)]. This has many advantageous properties over previously studied schemes, including being significantly shorter a given energy having better bandwidth. Experimental results from ATF2 accelerator at KEK are presented that validate operating principle such by demonstrating demagnification 1.3 GeV electron beam down to below 65 nm height...

10.1103/physrevlett.112.034802 article EN Physical Review Letters 2014-01-24

For high luminosity in electron-positron linear colliders, it is essential to generate low vertical emittance beams. We report on the smallest achieved single-bunch-mode operation of Accelerator Test Facility, which satisfies requirement x-band collider. The emittances were measured with a laser-wire beam-profile monitor installed damping ring. bunch length and momentum spread beam also recorded under same conditions. rms at intensity 4 pm energy 1.3 GeV, corresponds normalized 1.0x1.0(-8)...

10.1103/physrevlett.92.054802 article EN Physical Review Letters 2004-02-06

The current-gain cutoff frequency performance of pseudomorphic InGaAs/AlGaAs (20% InAs composition) high-electron-mobility transistors (HEMTs) on GaAs is compared to that lattice-matched InGaAs/InAlAs HEMTs InP. (f/sub t/) characteristics as a function gate length (L/sub g/) indicate the f/sub t/-L/sub g/ product approximately 26 GHz- mu m in 23% higher than 21 HEMTs. also 46% conventional GaAs/AlGaAs ( 18 m). These data are very useful improving device for given length.< <ETX...

10.1109/55.703 article EN IEEE Electron Device Letters 1988-05-01

A miniature and broadband, K-band p-HEMT LNA MMIC, that incorporates simple lumped matching elements series bias topologies, has been developed for LMDS (Local Multi-point Distribution Service) satellite communication. The gain noise figure is 14.5+/-1.5 dB 1.7+/-0.2 dB, respectively, at frequencies between 23 30 GHz. die size of the MMIC 0.9 mm/sup 2/, gain-density this as high 14.4 dB/mm/sup which more than two times larger previously reported.

10.1109/mwsym.2000.860875 article EN 2002-11-07

The barrier heights of several n-InAlAs/metal Schottky contacts are discussed. A thin-Pt/Ti/Pt Au multilayer gate is proposed for InP-based InAlAs/InGaAs HEMTs. Its height was measured as 0.83 eV, and it shows good threshold voltage stability. Performance measurements an enhancement-mode HEMT fabricated using a 1.1- mu m-long indicate 0.05 V transconductance 540 mS/mm.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

10.1109/iciprm.1991.147394 article EN 2002-12-09

Electron beams with the lowest, normalized transverse emittance recorded so far were produced and confirmed in single-bunch-mode operation of Accelerator Test Facility at KEK. We established a tuning method damping ring which achieves small vertical dispersion x-y orbit coupling. The was less than 1% horizontal emittance. At zero-intensity limit, 2.8 x 10(-8) rad m beam energy 1.3 GeV. high intensity, strong effects intrabeam scattering observed, had been expected view extremely particle...

10.1103/physrevlett.88.194801 article EN Physical Review Letters 2002-04-30

Abstract A new solar cell structure named HIT (Heterojunction with Intrinsic Thin layer) has been developed based on artificially constructed junction (ACJ) technology. In this a non‐doped a‐Si thin layer was inserted between the p(a‐Si)/n(c‐Si) heterojunction, improving output characteristics and achieving conversion efficiency of 18.1%. This applied to cast polycrystalline silicon cells practical size. high efficeincy 13.6% obtained size 10 cm × using various technologies, including...

10.1002/pip.4670010201 article EN Progress in Photovoltaics Research and Applications 1993-02-01

ATF2 is a final-focus test beam line which aims to focus the low emittance from ATF damping ring vertical size of about 37 nm and demonstrate nanometer level stability. Several advanced diagnostics feedback tools are used. In December 2008, construction installation were completed commissioning started, supported by an international team Asian, European, U.S. scientists. The present status first results described.

10.1103/physrevstab.13.042801 article EN cc-by Physical Review Special Topics - Accelerators and Beams 2010-04-21

This paper presents a complete 60 GHz millimeter-wave MMIC chipset for broadband wireless access system. consists of low noise amplifier, power an up-converter, down-converter, quadrupler and SPDT switch. Frequency range these MMICs is from 55 to 64 GHz, this frequency covers the entire application band.

10.1109/mwsym.2002.1012192 article EN 2003-06-25

The International Linear Collider (ILC) damping ring (DR) injection and extraction kickers have a very special role: the bunch spacing 189--480 ns is compressed to 3--9 when injected into DR then decompressed leaving DR. act as bunch-by-bunch beam manipulator compress decompress into/from They require fast rise/fall time (3--9 ns) high repetition rate (6--2 MHz). Among candidate technologies, multiple strip-line kicker system most likely realize specifications for ILC reference design. A...

10.1103/physrevstab.14.051002 article EN cc-by Physical Review Special Topics - Accelerators and Beams 2011-05-18

The optimum structure of the sputtered garnet magnetooptical disk was investigated by numerical calculations and experiments. From Faraday rotation, ellipticity, refractive index, extinction coefficient, authors determined dielectric tensor elements a film. Using these values, they calculated thickness dependence rotation angle, reflectivity, reproduced signal amplitude with reflecting layer. These results were then compared measurements. reflector material for found. has carrier/noise ratio...

10.1109/20.42418 article EN IEEE Transactions on Magnetics 1989-01-01

The magnetic and magneto-optical properties of crystallized as-deposited Ce-substituted sputtered garnet films were measured as a function temperature. found to exhibit large Faraday rotation high coercivity at room small grain size squareness ratios these suggests that this media holds promise potential recording candidate for use laser diode wavelengths. Furthermore, it was depending upon the value sputtering system background pressure prior film deposition compensation temperature varied...

10.1063/1.344922 article EN Journal of Applied Physics 1990-05-01

We have investigated nonalloyed ohmic contacts on HEMT's using a highly conductive n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -InGaAs layer. The minimum specific contact resistance obtained was 4.8 × 10 xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> Ω.cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and the IV characteristics were equal to or better than those of conventional with alloyed contacts. maximum...

10.1109/edl.1987.26670 article EN IEEE Electron Device Letters 1987-09-01

Self-aligned High Electron Mobility Transistor (HEMT) technology based on selectively doped GaAs/AlGaAs heterostructure for LSI circuits is presented. A unique epistructure, associated with gate dry recessing process which one of the most important technologies realizing E/D type HEMT DCFL described. Making best use refined recess technology, we have successfully fabricated and tested 4Kb SRAM, minimum address access time 2.0 ns at 77K. This highest speed ever reported RAMs.

10.1109/gaas.1984.10401298 article EN 1984-10-01

The beam delivery system for the linear collider focuses beams to nanometer sizes at its interaction point, collimates halo provide acceptable background in detector and has a provision state-of-the art instrumentation order reach ILC's physics goals. This paper describes design details status of baseline configuration considered reference also lists alternatives.

10.1109/pac.2007.4441135 article EN 2007-06-01

Irradiation damage and its recovery behavior resulting from thermal annealing in InGaP/InGaAs pseudomorphic HEMTs, subjected to a 20 MeV alpha ray 220 carbon, are studied for the first time. The drain current effective mobility decrease after irradiation, while threshold voltage increases positive direction. degradation of device performance with increasing fluence. is thought be due scattering channel electrons induced lattice defects also electron density two dimensional gas (2DEG) region....

10.1109/23.736540 article EN IEEE Transactions on Nuclear Science 1998-12-01

Pathogen attack is a serious problem in rice, which one of the most economically important crops worldwide. Plant genes with disease resistance have been extensively analyzed. Antimicrobial peptides from variety organisms are known to inhibit growth pathogens. usually small, cationic, and amphipathic open-chain forms disulfide bonds leading rigid compact structures. A gene family plant defensins (AFP) conserved several species, including those Brassicaceae, does not appear be toxic mammalian...

10.6090/jarq.37.71 article EN Japan Agricultural Research Quarterly JARQ 2003-01-01

Large-area photochemical selective dry etching has been developed for use in InGaAs/InAlAs heterojunction fabrication involving CH/sub 3/Br gas and a low-pressure mercury lamp. The etch rate of the InGaAs layer was 17 nm/min ratio to InAlAs around 25 1. recess performed N-InAlAs/InGaAs HEMT's on 3-in wafer using etching. standard deviation threshold voltage across 18 mV at -0.95 V, transconductance 456 mS/mm obtained 1.1- mu m-long gate within 14.9 mS/mm.< <ETX...

10.1109/55.144973 article EN IEEE Electron Device Letters 1992-02-01

10.1016/s0304-8853(97)90030-5 article EN Journal of Magnetism and Magnetic Materials 1990-07-01

ABSTRACT Accumulating evidence suggests a correlation between disulfide bonding and the allergenicity of proteins. Also, significant characteristic most food allergens is that they are stable to proteases. We sought identify putative buckwheat seed comprehensively by combining proteome technique with an in vitro digestibility test. First, dilute acetic acid fraction was found be rich Internal amino sequence analyses these proteins showed them were known or sharing high similarities...

10.1094/cc-83-0132 article EN Cereal Chemistry 2006-03-01
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