A5031551967- Chalcogenide Semiconductor Thin Films
- Photonic and Optical Devices
- Photonic Crystals and Applications
- Mechanical and Optical Resonators
- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Carbon Nanotubes in Composites
- Copper-based nanomaterials and applications
- Electronic and Structural Properties of Oxides
- Luminescence Properties of Advanced Materials
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- Copper Interconnects and Reliability
- Transition Metal Oxide Nanomaterials
- Ga2O3 and related materials
- Semiconductor materials and devices
- Gas Sensing Nanomaterials and Sensors
- TiO2 Photocatalysis and Solar Cells
- Catalytic Processes in Materials Science
- Optical Coatings and Gratings
- Nanotechnology research and applications
- Nonlinear Optical Materials Research
Centre National de la Recherche Scientifique
2013-2024
Surface du Verre et Interfaces
2021-2024
Saint-Gobain (France)
2021-2024
Saint-Gobain Recherche Paris
2021-2024
Institut national de l’information géographique et forestière
2018-2020
Institut Photovoltaïque d’Île-de-France
2018-2020
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2019
Institut Rayonnement-Matière de Saclay
2016-2019
Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Énergie
2019
Institut de France
2018-2019
UV excitation of Nd doped SnO<sub>2</sub> leads to visible & NIR emission: Nd<sup>3+</sup> ions are optically active in nanoparticles.
The luminescence of rare earths in CeO<sub>2</sub>is sensitized by intrinsic Ce<sup>3+</sup>ions.
Sputtered ZnO thin films doped with Nd present efficient down-shifting properties.
Embedding luminescent rare earth ions into transparent oxides such as ZnO is a well-known approach to functionalize the material by adding photon-management properties. In this paper we present detailed study of luminescence properties and energy level structure Pr3+ Yb3+ embedded in thin films deposited magnetron reactive sputtering. Careful photoluminescence excitation spectra allowed identifying locating almost all excited levels ions. Thus, an complete electronic diagram these crystal...
Functional and easy‐to‐integrate nanodevices operating in the telecom wavelength ranges are highly desirable. Indeed, pursuit for faster, cheaper, smaller transceivers datacom applications is fueling interest alternative materials to develop next generation of photonic devices. In this context, single wall carbon nanotubes (SWNTs) have demonstrated outstanding electrical optical properties that make them an ideal material realization ultracompact optoelectronic Still, mixture chirality...
Silicon photonics has emerged as a very promising technology platform for the implementation of high-performance, low-cost, ultra-compact circuits that can monolithically cointegrate electronic, opto-electronic and optic functionalities. However, Si neither efficient light emission or detection in telecom wavelength range, nor exhibits electro-optic Pockels effect, hindering integrated active devices like sources, detectors, modulators. Current approaches relay on different materials to...
Polymer-sorted semiconducting single-walled carbon nanotubes (SWNTs) provide room-temperature emission at near-infrared wavelengths, with potential for large volume production of high-quality solutions and wafer-scale deposition. These features make SWNTs a very attractive material the realization on-chip light sources. Coupling SWNT into optical microcavities could enhance guide their emission, while enabling spectral selection by cavity resonance engineering. This allow bright, narrowband...
Cu(In,Ga)Se2 (CIGS) solar cells have achieved the highest efficiencies among thin-film technologies. At low temperatures (<;450 °C) compatible with polyimide, lower diffusion rates of copper, indium, and gallium are observed. This implies a strong composition gradient when standard three-stage process is used. In this paper, we investigate impact Ga content at interface between CIGS buffer layer where manage to create steep front grading. has on device performances leading significant...
Flexible, lightweight, Cu(In,Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> photovoltaic technology is becoming more and popular, thanks to the very high efficiencies already achieved (>20%) possible employment of roll-to-roll deposition techniques, offering new application opportunities. In this paper, we aim improve understanding performances recently discovered front surface engineering approaches. We show that improvement Voc...
The use of gaseous species has been proposed in the literature to counteract three-dimensional growth tendency noble metals on dielectric substrates and favor an earlier percolation without compromising electrical properties. This "surfactant" effect is rationalized herein case O2 presence during magnetron sputtering deposition Ag films SiO2. In situ real-time techniques (X-ray photoemission, film resistivity, UV-visible optical spectroscopy) ex characterizations diffraction transmission...
A proper control of Ga composition gradient is mandatory to achieve high efficiency Cu(In,Ga)Se2 (CIGS) solar cells. Steeper gradients are usually obtained when CIGS deposited at low temperatures (<450 °C) on polymer substrates such as polyimide with a three-stage process. As steep gallium considered detrimental carrier transport and reduces cells efficiency, modification the deposition process has be implemented. In this study, we analyze growth properties by coupling XRD, Raman...
CeO2 is a promising material for applications in optoelectronics and photovoltaics due to its large band gap values of the refractive index lattice parameters, which are suitable silicon-based devices. In this study, we show that trivalent Sm, Nd Yb ions can be successfully inserted optically activated films grown at relatively low deposition temperature (400 °C), compatible with inorganic photovoltaics. thin therefore efficiently functionalized photon-management properties by doping rare...
Hybrid systems based on carbon nanotubes emitting in the telecom wavelength range and Si-photonic platforms are promising candidates for developing integrated photonic circuits. Here, we consider semiconducting single walled (s-SWNTs) around 1300 nm or 1550 wavelength. The deposited quartz substrate mapping their photoluminescence hyperspectral near-field microscopy. This method allows a sub-wavelength resolution detecting spatial distribution of emission s-SWNTs at room temperature. Optical...
By combining the well-known grid reflection method with a digital image correlation algorithm and geometrical optics model, new is proposed for measuring change of curvature smooth reflecting substrate, common reporter stress state deposited layers. This tool, called Pattern Reflection Mapping Curvature (PReMC), can be easily implemented analysis residual during deposition processes sufficiently accurate to follow compressive-tensile-compressive transition sputtering growth Ag film on Si...
CIGS based solar cells are still part of the most popular developed. A chemical study is presented here by using XPS measurements, characterizing surface chemistry and reactivity, with a focus on deoxidation further ageing products, among which binary compounds oxides can be found. Different treatments also suggested to adjust composition materials determine re-oxidation delay. specific point will discussed about comparative evolution alkali element distribution during conventional...
A new concept is proposed to develop efficient tandem cells based on silicon bottom and wide band gap Cu(In,Ga,Al)(S,Se)2 (noted CIGS) top cells. It consists in introducing an epitaxial III-V buffer layer at the interface. The benefit of this configuration discussed terms lattice offsets matching between CIGS III-V's. Selected combinations are proposed, with AlGaAs GaAlP layers. Preliminary results CuGaSe2 various sustrates confirm influence if substraqte growth CGS PV propoerties. Epitacial...
Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become preferred solution for implementation of next generation optical interconnects. However, current Si photonics require on-chip several materials, including III-V lasing, doped silicon modulation Ge detection. The very different requirements these materials result in complex fabrication processes that offset cost-effectiveness approach. We are developing an alternative route...