A5001073517- Silicon Nanostructures and Photoluminescence
- ZnO doping and properties
- Semiconductor materials and devices
- Gas Sensing Nanomaterials and Sensors
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Copper-based nanomaterials and applications
- Electronic and Structural Properties of Oxides
- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Advanced Semiconductor Detectors and Materials
- Ga2O3 and related materials
- Transition Metal Oxide Nanomaterials
- Luminescence Properties of Advanced Materials
- Silicon and Solar Cell Technologies
- Acoustic Wave Resonator Technologies
- Advanced ceramic materials synthesis
- Diamond and Carbon-based Materials Research
- Ion-surface interactions and analysis
- Laser-Ablation Synthesis of Nanoparticles
- Semiconductor Quantum Structures and Devices
- Optical Coatings and Gratings
- Solid State Laser Technologies
Laboratoire des Sciences de l'Ingénieur, de l'Informatique et de l'Imagerie
2014-2022
Centre National de la Recherche Scientifique
2012-2021
Université de Strasbourg
2013-2021
Canadian Nautical Research Society
2014
Institut d'Électronique et des Systèmes
2007-2012
Université de Montpellier
2003-2005
Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier
2003
UV excitation of Nd doped SnO<sub>2</sub> leads to visible & NIR emission: Nd<sup>3+</sup> ions are optically active in nanoparticles.
ZnO thin films were deposited on silicon substrate by rf magnetron sputtering from metallic zinc target. The electrical properties of are currently being studied. In this work, measurements the ac conductivity sandwich structures with silver and platinum electrodes reported. frequency dependence both dielectric constant have been investigated in range 5 kHz–13 MHz. It is shown that total σ(ω), obeys equation σ(ω)=AωS where s an index which increases decreases temperature. appears for films,...
Structural, optical, and electrical properties of Nd-doped SnOx thin films are reported. The atomic structure was characterized by x-ray diffraction infrared absorption spectrometry. Investigation the photoluminescence revealed Nd-related bands at 920 1100 nm for samples annealed 700 °C, which present tetragonal SnO2 rutile phase. Nd3+ ions can be indirectly excited no concentration quenching observed up to 3 at. %. It is concluded that efficient optically active dopants in addition...
In this work, silicon-rich silicon nitride (SRN) layers were deposited on a wafer by microwave-assisted plasma-enhanced chemical vapor deposition (MW-PECVD) using NH3 and SiH4 as precursor gases. The Si excess in the as-deposited determined Rutherford backscattering technique was controlled varying gas ratio. We able to produce nanoparticles (Si-nps) (SiNx) upon thermal annealing at high temperature. Energy-filtered TEM (EFTEM), complemented photoluminescence measurements, used identify...
Abstract In this study, a wide range of a-SiN x :H films with an excess silicon (20 to 50%) were prepared electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows NH 3 and SiH 4 . The silicon-rich (SRSN) sandwiched between bottom thermal SiO 2 top Si N layer, subsequently annealed within temperature 500-1100°C in study effect annealing on light-emitting charge storage properties. A strong visible photoluminescence (PL) at room has been observed for...
In this paper we use spectroscopic ellipsometry to investigate the optical properties of silicon quantum dots (Si-QDs) embedded in silicon-rich nitride (SRSN) films over (1.5–5.9 eV) photon energy range. These were elaborated by microwave plasma enhanced chemical vapor deposition for various gas flow ratio [R=(NH3)/(SiH4)]. We have analyzed ellipsometric data using modeling methods: Forouhi–Bloomer (FB) and Tauc–Lorentz (TL) dispersion formulas wavelength-by-wavelength (λ-by-λ) numerical...
Sputtered ZnO thin films doped with Nd present efficient down-shifting properties.
Embedding luminescent rare earth ions into transparent oxides such as ZnO is a well-known approach to functionalize the material by adding photon-management properties. In this paper we present detailed study of luminescence properties and energy level structure Pr3+ Yb3+ embedded in thin films deposited magnetron reactive sputtering. Careful photoluminescence excitation spectra allowed identifying locating almost all excited levels ions. Thus, an complete electronic diagram these crystal...
p and n type SnO<sub>x</sub> thin films are successfully functionalized with optically active Nd<sup>3+</sup> ions for efficient UV photon conversion.
In this work, we studied inverted organic solar cells based on bulk heterojunction using poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C71-butyric acid methyl ester (P3HT:PCBM) as an active layer and a novel cathode buffer bilayer consisting of tin dioxide (SnO2) combined with polyethylenimine-ethoxylated (PEIE) to overcome the limitations single layer. The combination SnO2 PEIE is promising approach that improves charge carrier collection reduces recombination. efficient device, which...
This work reports on the structural and optical properties of multilayers composed silicon dioxide (SiO2) rich nitride (SRN) films. These nanometer scale layers have been alternately deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) quartz (Si) substrates. The samples then annealed at high temperature in order to obtain a crystallization Si atoms present excess SRN formation crystalline has witnessed resolution transmission microscopy (HREM)...
High quality zinc oxide thin films have been deposited on silicon substrates by reactive e-beam evaporation in an oxygen environment. The effect of the growth temperature and air annealing structural, optical electrical properties has investigated. X-ray diffraction measurements shown that ZnO are highly c-axis-oriented linewidth (002) peak is sensitive to variation substrate temperature. optimum observed at 300 °C. Raman spectroscopy found be efficient tool evaluate residual stress as-grown...
In this study, silicon rich oxynitride layers containing more than 15% nitrogen were deposited by electron cyclotron resonance assisted plasma enhanced vapor deposition in order to form nanoparticles after a high temperature thermal annealing. The effect of the flows precursor gases on composition and structural properties was assessed Rutherford backscattering spectroscopy, elastic recoil detection analysis, infrared spectroscopic measurements. morphological crystallinity investigated...
Transparent conducting oxides (TCOs) are a crucial component of solar cells. Tin-doped indium oxide (ITO) is the most employed TCO, but scarcity and high price induce search for lower-cost TCOs with equivalent properties as substitutes. Tin dioxide (SnO2) films have many advantages, such rich sources material, low prices, nontoxicity. SnO2 present visible-light transmittance, near-infrared light reflectivity, excellent electrical properties. They also higher chemical mechanical stability...