- Boron and Carbon Nanomaterials Research
- ZnO doping and properties
- Diamond and Carbon-based Materials Research
- Glass properties and applications
- Copper-based nanomaterials and applications
- Gas Sensing Nanomaterials and Sensors
- Material Dynamics and Properties
- Advanced ceramic materials synthesis
- Metal and Thin Film Mechanics
- Energetic Materials and Combustion
- Graphene research and applications
- Electronic and Structural Properties of Oxides
- Luminescence Properties of Advanced Materials
- X-ray Spectroscopy and Fluorescence Analysis
- Semiconductor materials and devices
- Corrosion Behavior and Inhibition
- Ferroelectric and Piezoelectric Materials
- Ion-surface interactions and analysis
- Copper Interconnects and Reliability
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Theoretical and Computational Physics
- Advanced Photocatalysis Techniques
- Building materials and conservation
- Cultural Heritage Materials Analysis
Surface du Verre et Interfaces
2017-2024
Saint-Gobain (France)
2009-2024
Centre National de la Recherche Scientifique
1997-2024
Saint-Gobain Recherche Paris
2009-2024
National Institute for Materials Science
2017-2018
Biophy Research (France)
2002
Institut de Chimie de la Matière Condensée de Bordeaux
1997-2000
The use of gaseous species has been proposed in the literature to counteract three-dimensional growth tendency noble metals on dielectric substrates and favor an earlier percolation without compromising electrical properties. This "surfactant" effect is rationalized herein case O2 presence during magnetron sputtering deposition Ag films SiO2. In situ real-time techniques (X-ray photoemission, film resistivity, UV-visible optical spectroscopy) ex characterizations diffraction transmission...
With the perspective of using two-dimensional materials as growth substrates for semiconductors, we explore nucleation GaN nanostructures on graphene. Using plasma-assisted molecular beam epitaxy, investigate what happens during long incubation time which precedes epitaxy first islands. After 30 min nitrogen plasma exposure with no deposition, find that graphene is modified, and identify C–N bonds. We measure model variation parameters. These data support idea must be modified before becomes...
Abstract We compared the impact of alumina doping on structure Al 2 O 3 –SiO amorphous thin films and bulk glasses using Raman spectroscopy x‐ray diffraction. In both glasses, addition is accompanied by an increase in mean Si–O–T angle evolution ring statistics with a decrease proportion small rings. evidenced structural differences between sputtered fused glasses. Sputtered are about 6%–7% denser than their equivalent This difference mainly due to change formation rings within films. These...
Band alignment at the interface between evaporated silver films and Zn- or O-terminated polar orientations of ZnO is explored by combining soft hard x-ray photoemissions on native hydrogenated surfaces. Ultraviolet photoemission spectroscopy (UPS) used to track variations work function, band bending, ionization energy, Schottky barrier during deposition. The absolute values bending bulk position Fermi level are determined continuous (HAXPES) through a dedicated modeling core levels....
Abstract We study the diffusive interaction between soda‐lime glass substrates and sputtered aluminum‐doped silica thin films at 650°C, temperature of commercial shaping or tempering. A first rapid migration alkali ions from substrate to film has been described in a companion paper ( J Am Ceram Soc . 2018;101:1516). Using same samples as 2018;101:1516), we focus here on later interactions, when layer is consumed by resulting interactions. Secondary Ion Mass Spectroscopy profilometry, show...
Abstract Interdiffusion processes between aluminum enriched PVD ‐sputtered silica thin films and industrial float soda‐lime silicate glass substrates are quantitatively studied using SIMS analysis. Heat treatments performed at temperatures close or above the transition temperature of glass. Aluminum doping film is shown to strongly increase migration alkali from substrate film. In particular final content in exhibits a linear scaling with concentration. An interdiffusion process evidenced...
It is critical to reveal how crystalline polarity correlates with the electronic transport properties in polar semiconductors, such as zinc oxide (ZnO), for development of materials tailored specific optoelectronic applications. In this paper, we investigate structure–property relationships ZnO films by means tailoring homostructural bilayers that are subjected an external substrate bias (Vsub) during deposition. Since probability incorporating defects and impurities depend on facet, should...
Materials with high elements (C, B, N. . ) appear to be a great interest for the future. The most dense forms of these materials are characterized by exceptional physico-chemical properties (diamond, c-BN, β-C3N4. ). last material (C3N4) issued from "ab-initio" calculations has instigated development researches its preparation mainly as microscopic sample (carbon-nitride thin film deposition). Recently, we have proposed new approach synthesis graphitic phase C3N4 (g-C3N4) based on...
By combining the well-known grid reflection method with a digital image correlation algorithm and geometrical optics model, new is proposed for measuring change of curvature smooth reflecting substrate, common reporter stress state deposited layers. This tool, called Pattern Reflection Mapping Curvature (PReMC), can be easily implemented analysis residual during deposition processes sufficiently accurate to follow compressive-tensile-compressive transition sputtering growth Ag film on Si...
Diffusion-driven coarsening of droplets is a classical subject in statistical physics, yet kinetics confined systems have received little attention. We report here on the thin (50–200 nm) films phase-separated barium borosilicate glasses. In this ultra-confined geometry where at most one droplet observed within film thickness, grow like power-law time with an exponent about 0.17 significantly smaller than that Ostwald ripening (1/3) characteristic bulk coarsening. complement these...
Abstract The ab initio calculations of the stability unknown materials present new developments in solid state chemistry and can improve research superhard materials. compound C3N4 is an interesting illustration such a route for predicting original During approximately past 10 years five different structures have been predicted: one two-dimensional (the graphitic form C3N4) four are three-dimensional (α, β, zinc-blende-type with carbon vacancies, cubic-type isostructural high-pressure...
Sulfur is an important element of glasses, not because its amount, always very low (less than 0.4 % in weight SO3), but role since it actively participates to the refinement process and, combined other elements, can be responsible for coloration glass. Iron also a major importance most glasses. In case float glass, two faces, fabrication process, are different terms composition (presence Sn one face) and oxidation state these minority elements (Fe, Sn, S). There should subttle interplay...
Abstract Basing on “ab-initio” calculations, C3N4 was claimed to be an ultra-hard material with a bulk-modulus close that of diamond. Five different structural varieties were announced: the graphitic form, zinc blende structure, α and β forms Si3N4 another isostructural high pressure variety Zn2Si04. Using same strategy as developed for diamond or c-BN synthesis, it appears form could appropriate precursor preparing 3D varieties. Two main problems characterize synthesis: (-) temperature...
Growth‐parameter dependence of crystalline polarity and associated electronic transport properties zinc oxide (ZnO) thin films deposited by radio‐frequency magnetron sputtering are investigated. The magnitudes input power distance between the substrate ZnO target play crucial roles in controlling either (0001) or planes. In addition, crystallinities surface morphologies largely different two types Remarkably, electrical conductivities a few orders magnitude higher than those planes, which...