A5003149290- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Advanced Semiconductor Detectors and Materials
- Silicon Carbide Semiconductor Technologies
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Infrared Target Detection Methodologies
- Chalcogenide Semiconductor Thin Films
- Spectroscopy and Laser Applications
- Advanced X-ray and CT Imaging
- Ferroelectric and Negative Capacitance Devices
- Thin-Film Transistor Technologies
- GaN-based semiconductor devices and materials
- Thermal properties of materials
- Graphene research and applications
- Machine Learning in Materials Science
- ZnO doping and properties
- Advanced Memory and Neural Computing
- Topological Materials and Phenomena
- Electronic and Structural Properties of Oxides
- Tissue Engineering and Regenerative Medicine
- Analytical Chemistry and Sensors
- Low-power high-performance VLSI design
The University of Western Australia
2014-2024
University College Cork
2008-2012
Tyndall National Institute
2008-2012
V.E. Lashkaryov Institute of Semiconductor Physics
2011
National Academy of Sciences of Ukraine
2011
Tyndall Centre
2009-2010
Deutsches Herzzentrum der Charité
2008
Semnan University
2007
This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal concentration and type to the source drain extension doping. proposed device thin narrow multigate field-effect transistor, can be fully depleted turned off by gate. Since this has junctions, it simpler fabrication process, less variability, better electrical properties than classical MOS devices with PN
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This paper investigates the temperature dependence of main electrical parameters junctionless (JL) silicon nanowire transistors. Direct comparison is made to (trigate) MOSFETs. Variation such as threshold voltage and <emphasis emphasistype="smcaps">on</emphasis>– emphasistype="smcaps">off</emphasis> current characteristics analyzed. The JL FET has a lager variation with than standard inversion-...
The electric field perpendicular to the current flow is found be significantly lower in junctionless transistors than regular inversion-mode or accumulation-mode field-effect transistors. Since inversion channel mobility metal-oxide-semionductor reduced by this field, low transistor may give them an advantage terms of drive for nanometer-scale complementary metal-oxide semiconductor applications. This observation still applies when quantum confinement present.
This paper presents the evaluation of analog properties nMOS junctionless (JL) multigate transistors, comparing their performance with those exhibited by inversion-mode (IM) trigate devices similar dimensions. The study has been performed for operating in saturation as single-transistor amplifiers, and we have considered dependence on fin width <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">W</i> <sub...
Conduction mechanisms in junctionless nanowire transistors (gated resistors) are compared to inversion-mode and accumulation-mode MOS devices. The device uses bulk conduction instead of surface channel. current drive is controlled by doping concentration not gate capacitance. variation threshold voltage with physical parameters intrinsic performance analyzed. A scheme proposed for the fabrication devices on silicon.
The improvement of subthreshold slope due to impact ionization is compared between “standard” inversion-mode multigate silicon nanowire transistors and junctionless transistors. length the region over which takes place, as well amplitude rate are found be larger in devices, reduces drain voltage necessary obtain a sharp slope.
We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate transistors.
In this work we show that junctionless nanowire transistor (JNT) exhibits lower degree of ballisticity in subthreshold and higher above threshold compare to conventional inversion-mode transistors, according quantum mechanical simulations. The degradation the region gives JNT near-ballistic transport performance hence a high current drive. On other hand, helps reducing off-current improves slope. A three-dimensional device simulator based on nonequilibrium Green’s function formalism...
Design of practically realizable unipolar HgCdTe nBn photodetectors has been studied in detail by numerical analysis. The simulations reported herein reveal that, optimization barrier doping, dark current levels can be reduced and collection efficiency substantially improved. It is shown that p-type doping the layer significantly reduce effective potential arising from valence band offset between absorber regions, thus enabling detector operation under near zero-bias conditions. However,...
The design of a 6T SRAM cell with 20 nm junctionless (JL) MOSFETs is reported. It shown that designed JL achieves high static noise margin (SNM) 185 mV, retention or hold (RNM) 381 mV and writability current (IWR) 33 µA along low leakage (ILEAK) 2 pA at supply voltage (VDD) 0.9 V for pull-up ratios 1. Results offer new opportunity to future cells nanoscale MOSFETs.
Improvement of current drive in n- and p-type silicon junctionless metal-oxide-semiconductor-field-effect-transistors (MOSFETs) using strain is demonstrated. Junctionless transistors have heavily doped channels with doping concentrations excess 1019 cm−3 feature bulk conduction, as opposed to surface channel conduction. The extracted piezoresistance coefficients are good agreement the piezoresistive theory published for even 10 nm thick nanowires narrow 20 nm. These experimental results...
Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage temperature. It shown that the RTN JL MOSFETs increases significantly when an accumulation layer formed. The amplitude considerably smaller devices than inversion-mode MOSFET fabricated using similar fabrication parameters. A measurement technique developed to extract main parameters traps, including average charge capture emission...
A new type of multigate MOSFET, called the junctionless nanowire transistor (JNT), has recently been proposed. It avoids junction formation problem and can be used to make very short-channel devices. Here, we compare properties performances transistors with those Π-gate inversion-mode (IM) The silicon JNTs IM are evaluated in terms effects, current drive, gate capacitance. Junctionless devices shown have smaller effects than junctions. Comparison carrier transport channel is made between...
A method is described where the valence band discontinuity in HgCdTe-based nBn detectors will be eliminated. The relies on doping modulation technique, grading material composition and concentration of barrier layer at same time lead to elimination detectors. not limited structure can applied any detector with xBx (with x = n, p) eliminate energy or conduction band.
In this paper, we present a theoretical study of mercury cadmium telluride (HgCdTe)-based unipolar n-type/barrier/n-type (nBn) infrared (IR) detector structures for midwave IR and longwave spectral bands. To achieve the ultimate performance nBn detectors, bandgap engineering method is proposed to remove undesirable valence band discontinuity that currently limiting conventional HgCdTe detectors. Our relies on simultaneous grading barrier composition doping density profiles, leading efficient...
Abstract In this paper, we study the limiting mechanisms and design criteria of HgCdTe photodetectors for extended shortwave infrared applications with ultra-high quantum efficiency (QE) in both n -on- p technologies. Numerical analytical models are employed order to possibility achieving QE eSWIR detectors operational wavelengths approximately 2.0 μm, our shows that by proper absorber layer doping density, such a detector can be engineered. Furthermore, demonstrate Shockley–Read–Hall (SRH)...