A5024846012- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- GaN-based semiconductor devices and materials
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Diamond and Carbon-based Materials Research
- Copper Interconnects and Reliability
- Chalcogenide Semiconductor Thin Films
- nanoparticles nucleation surface interactions
- Quantum and electron transport phenomena
- Metal and Thin Film Mechanics
- Nonlinear Optical Materials Studies
- Advanced ceramic materials synthesis
- Solidification and crystal growth phenomena
- Electromagnetic Compatibility and Noise Suppression
- Quantum Dots Synthesis And Properties
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- Aluminum Alloys Composites Properties
- Laser Material Processing Techniques
- Metallurgical Processes and Thermodynamics
- Advanced Semiconductor Detectors and Materials
- Plasma Diagnostics and Applications
- Photonic and Optical Devices
Schott (Germany)
2007-2023
Fraunhofer Institute for Integrated Systems and Device Technology
2012-2023
Friedrich-Alexander-Universität Erlangen-Nürnberg
1999-2019
Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems (Awschalom et al. Nat. Photonics 2018, 12, 516−527; Atatüre Rev. Mater. 3, 38–51). However, to achieve scalable devices, it is essential generate single at desired locations on demand. Here we report the controlled creation of vacancy (VSi) centers 4H-SiC using laser writing without any postannealing process. Due aberration correction apparatus and nonannealing process, VSi with yields up...
Abstract We have grown $$^{232}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msup> <mml:mrow/> <mml:mn>232</mml:mn> </mml:msup> </mml:math> Th:CaF $$_2$$ <mml:msub> <mml:mn>2</mml:mn> </mml:msub> and $$^{229}$$ <mml:mn>229</mml:mn> single crystals for investigations on the VUV laser-accessible first nuclear excited state of Th, with aim building a solid-state clock. To reach high doping concentrations despite extreme scarcity (and radioactivity) we scaled down crystal...
A distributed quantum network would require nodes capable of performing arbitrary information protocols with high fidelity. So far the challenge has been in realizing such features for scalable computing. We show here that using solid-state spins 4H-Silicon Carbide (4H-SiC) a goal could be realized, wherein controlled generation highly coherent qubit registers nuclear is possible. Using isotope concentration and control we perform atomistic modeling central spin system formed by electron...
A new tool for characterizing extended defects in Silicon Carbide (SiC) based on photoluminescence imaging is presented. In contrast to other techniques like Defect Selective Etching (DSE) or X-ray topography this technique both fast and non-destructive. It shown that several defect types, especially those relevant the performance of electronic devices SiC (i.e. Stacking Faults Basal Plane Dislocations) can be investigated. The therefore usable research development a quick feedback process...
Basal Plane Dislocations (BPDs) in SiC are thought to cause degradation of bipolar diodes with blocking voltages > 2kV by triggering the formation and expansion stacking faults during device operation. Hence, low N doped, thick epitaxial layers without BPDs urgently needed for realization long-term stable diodes. Such epilayers can be achieved if conversion BPD into another harmless dislocation type is supported proper growth parameters use vicinal (off-cut) substrates. In this work,...
Lifetime-engineering in 4H-SiC is important to obtain a low forward voltage drop bipolar devices with high blocking voltages above 10 kV. It known that the implantation of carbon and subsequent thermal annealing can be used improve minority carrier lifetime as-grown epitaxial layers due annihilation vacancies and, therefore, reduce limiting defect Z1/2. In this paper, ion other ions (N, Al, B, As) besides their impact on point concentration are shown. Special attention paid effect electrical...
4H-SiC homoepitaxial layers free of basal plane dislocations (BPDs) are urgently needed to overcome the so-called bipolar degradation high-voltage devices. BPDs being present in substrates able either propagate epilayer or convert harmless threading edge (TEDs) epilayer. The model by Klapper predicts conversion TEDs be more efficient for growth on vicinal with low off-cut angle. This paper aims verify an extensive variation epitaxial parameters and substrates' off-cut. It is shown that angle...
4H-SiC homoepitaxial layers with different thicknesses from 12.5 µm up to 50 were investigated by microwave-detected photoconductivity decay (µ-PCD), deep level transient spectroscopy (DLTS) and defect selective etching (DSE) shed light on the influence of epilayer thickness structural defects effective minority carrier lifetime. It is shown that lifetime, resulting directly µ-PCD measurement, significantly influenced surface recombination Therefore, an adequate correction measured data...
Homoepitaxial growth on 4° off-axis substrates with different off-cut directions, i.e. [11-20] and [1-100], was investigated using a commercial CVD reactor. The characteristics of the process directions were determined respect to applicable C/Si ratio, rate n- p-type doping range. Stable step flow achieved over broad range ratio at rates ~ 15 µm/h in both cases. n-type level epilayers can be controlled least from 5 1014 cm-3 3 1017 types substrates. Highly p = 2 1019 also grown [1-100]...