- Advancements in Semiconductor Devices and Circuit Design
- Low-power high-performance VLSI design
- Analog and Mixed-Signal Circuit Design
- Semiconductor materials and devices
- Advancements in PLL and VCO Technologies
- Radio Frequency Integrated Circuit Design
- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Antenna Design and Analysis
- Nanowire Synthesis and Applications
- IoT and Edge/Fog Computing
- Advanced Antenna and Metasurface Technologies
- Quantum-Dot Cellular Automata
- Energy Harvesting in Wireless Networks
- Advanced Memory and Neural Computing
- Embedded Systems Design Techniques
- Microwave Engineering and Waveguides
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Organic Light-Emitting Diodes Research
- Organic Electronics and Photovoltaics
- Electronic and Structural Properties of Oxides
- Semiconductor Lasers and Optical Devices
- Security and Verification in Computing
- Cloud Data Security Solutions
Advanced Memory Research Institute of New Jersey
2025
Amity University
2014-2023
Guru Gobind Singh Indraprastha University
2007-2023
Community Medical Center
2023
Rutgers, The State University of New Jersey
2023
Amity University
2014-2022
Patan Academy of Health Sciences
2020
Guru Jambheshwar University of Science and Technology
2011
University of Delhi
2008
A novel approach for illumination normalization is proposed by exploiting the correlation of discrete cosine transform (DCT) low-frequency coefficients to variations. The input image contrast stretched using full histogram equalization. Then DCT (except first) are re-scaled lower value compensate first (DC) coefficient scaled higher further enhancement. experiments performed on Yale B database and results show that performance better images with large technique computationally efficient can...
In this fast pace world, managing work and health simultaneously have become a matter of concern for most the people. Long waiting hours at hospitals or ambulatory patient monitoring are well known issues. The issues demands system which can monitor daily routine parameters heart rate seamlessly report same to concerned person with help GSM module. With progressing in technology various systems come up provided ease individuals. This paper portrays current research development field health....
The design and analysis of a four-port multi-input multi-output (MIMO) super wideband antenna (SWB) with metamaterial superstrate are proposed. Initially, single is constructed hexagonal radiator loaded dodecagon slots along slotted partial ground. An impedance bandwidth 4.1–14.7 GHz achieved by using symmetric coplanar waveguide feeding technique three iterations slot-loaded radiating element. extended to 2 × MIMO dimensions 50 1.6 mm3. four symmetrical SWB antennas placed orthogonally each...
With scaling of Vt sub-threshold leakage power is increasing and expected to become significant part total consumption.In present work three new configurations level shifters for low application in 0.35µm technology have been presented.The proposed circuits utilize the merits stacking technique with smaller current reduction power.Conventional shifter has improved by addition NMOS transistors, which shows consumption 402.2264pW as compared 0.49833nW existing circuit.Single supply modified...
In this paper, a novel approach for illumination normalization under varying lighting conditions is presented. Our utilizes the fact that discrete cosine transform (DCT) low-frequency coefficients correspond to variations in digital image. Under illuminations, images captured may have low contrast; initially we apply histogram equalization on these contrast stretching. Then DCT are scaled down compensate variations. The value of scaling factor and number coefficients, which be re-scaled,...
This paper demonstrates the fabrication of a thin film Zinc Oxide (ZnO) by RF sputtering on Indium Tin (ITO) substrate for Resistive Random-Access Memory (RRAM) application. The fabricated ZnO/ITO sample was bombarded with Swift Heavy Ion (SHI) Ag9+ ions at 100 MeV fluence 1 × 1013 ions/cm2 to study effect ion irradiation resistive switching ZnO based RRAM. resistance ratio Au/ZnO/ITO-based devices measured after irradiation. Enhancement more than 100% in observed I-V measurements, while...
A digitally controlled oscillator (DCO) using a three-transistor XOR gate as the variable load has been presented. delay cell an inverter and capacitance is also proposed. Three-, five- seven-stage DCO circuits have designed proposed cell. The output frequency with bits applied to cells. three-bit shows power consumption variation in range of 3.2486–4.0267 GHz 0.6121–0.3901 mW, respectively, change control word 111–000. five-bit achieves 1.8553–2.3506 1.0202–0.6501 11111–00000. Moreover,...
The paper proposes a high gain, metamaterial based super wideband (SWB) antenna. SWB antenna has two inverted U slots which are responsible for notches at 3.5 GHz and 5.5 frequencies. A flower-shaped slot is etched from the radiator to obtain characteristics. dimensions of 30×35 ×1.5 mm3 with FR4 substrate. frequency bandwidth 3.1 - 15 S11 < -10dB. unit cell designed simulated permittivity permeability This shows negative refractive index in band 2.4 8 8.2 9 GHz. 3×3 array cells used as...
This study looks at the results of Resistive random-access memory (ReRAM) devices made by using structural layers Gold (Au)/Zinc oxide (ZnO)/Indium tin (ITO). An annealed device resistance ratio increases nonlinearly. After annealing, was found to be 10 2 1 V. The device’s switching properties improved after annealing. Rutherford Backscattering Spectrometry (RBS) determine thickness deposited zinc layer, which approximately 140 ± nm. atomic fractions were calculated 60 % and oxygen 40 SIMNRA...
An analytical two-dimensional model for AlGaN/GaN modulation-doped field effect transistor is developed. The spontaneous and piezoelectric polarization effects have been included. Two-dimensional analysis has carried out in the high region. output characteristics, device transconductance cut off frequency 120 nm gate length are obtained. Peak of 320 mS/mm a GHz results show excellent agreement when compared with experimental data thereby proving validity model.
In today's era AMBA (advanced microcontroller bus architecture) specifications have gone far beyond the Microcontrollers. this paper, (Advanced Microcontroller Bus Architecture) ASB APB system - Advanced Peripheral Bus) is implemented. The goal of proposed paper to synthesis, simulate complex interface between and APB. methodology adopted for Verilog language with finite state machine models designed in ModelSim Version 10.3 Xilinx-ISE design suite, version 13.4 used extract utilization...
In this paper, needs of trusted IOT application are identified and a methodology is proposed to create framework "IoTEE" for rapid prototyping secure, commercial applications in absence hardware. This has been done by analysis requirements sample heartbeat sensor (hbs), classification bhs services their decomposition into non-trusted components. Furthermore, the includes algorithm design like registration, authentication, authorization secure communication framework. Detailed operation...
We present a theoretical model of AlGaN/GaN high electron mobility transistor (HEMT) that includes the effect spontaneous and piezoelectric polarization. Present also incorporates mole fraction dependent mobility, saturation velocity accurate 2-DEG density in HEMT as function gate voltage subthreshold, linear regimes. This paper reports detailed 2-D analysis capacitance-voltage (C-V) characteristics. The contribution various capacitances including fringing field capacitance on performance...
In this paper, one of AMBA (Advanced Microcontroller Bus Architecture) known as APB Peripheral Bus) is designed which provides minimum power consumption and low bandwidth. For this, an Bridge with Reset Controller design has been implemented in Verilog language. controller introduces a reset signal BnRES during Power-on (POReset) conditions so that propagation metastable values can be eliminated glitches avoided. Power report shows the various components contribute total by bridge...
Most of the power dissipation in SRAMs is due to leakage and it approximately 40% total dissipation. The increases as we move towards technology scaling unless effectively optimized circuit introduced keep under control. In this paper report on optimization a row decoder terms area. designed using three pre-decoders second level circuitry. Comparison proposed done with existing architecture two pre decoders consumption. About 25% reduction obtained architecture.
In this paper, five different low power full adders using XOR/XNOR gates and multiplexer blocks with body biasing have been presented. the first methodology, adder depicts minimum dissipation of 204.09μW delay 5.9849 ns. second, an improvement in consumption has reported at 128.92μW 5.9875 ns by voltage two PMOS (P1 &P2) along substrate biasing. third gives 0.223nW a 5.2352 Further, fourth, it shows 0.199nW 5.1002 finally fifth reduces to 0.192nW.Moreover, product (PDP) results also...
Digital controlled oscillators (DCOs) are the core of all digital phase locked loop (ADPLL) circuits. Here, DCO structures with reduced hardware and power consumption having full control have been proposed. Three different architectures proposed based on ring topology. Three, four five bit NMOS, PMOS NMOS & transistor switching networks presented. A three-transistor XNOR gate has used as inverter which is delay cell. Delay digitally a switch network transistors. The three one shows frequency...