A5091068446- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Acoustic Wave Resonator Technologies
- Dielectric materials and actuators
- Microwave Dielectric Ceramics Synthesis
- Dielectric properties of ceramics
- Ultrasonics and Acoustic Wave Propagation
- Seismic Waves and Analysis
- Smart Materials for Construction
- Advanced Sensor and Energy Harvesting Materials
Tsinghua University
2020-2024
State Key Laboratory of New Ceramics and Fine Processing
2020-2024
Tokyo Institute of Technology
2024
Relaxor ferroelectric (RFE) films are promising energy-storage candidates for miniaturizing high-power electronic systems, which is credited to their high energy density (
Abstract Lead zirconate titanate (PZT)‐based piezoelectric ceramics are important functional materials for various electromechanical applications, including sensors, actuators, and transducers. High coefficient mechanical quality factor essential the resonant application. However, since these properties often inversely proportional, simultaneously high performances hard to achieve, consequently, a wide range of applications strongly restricted. In present study, exceptionally well‐balanced...
Since the extrinsic contribution is key to electric-field-induced strain in ferroelectrics, engineering interaction between defect and domain-wall motion has been an effective approach for enhancing performance. While acceptor doping frequently employed lead-free (K, Na)NbO3 (KNN) system, individual influence of intrinsic defects still ill-understood. In this work, pure KNN ceramics with various concentrations were prepared by hot-pressing at different temperatures. Meanwhile,...
Abstract With the development of advanced electrical and electronic devices requirement environmental protection, lead‐free dielectric capacitors with excellent energy storage performance have aroused great attention. However, it is a challenge to achieve both large density high efficiency simultaneously in capacitors. This work investigates sol‐gel‐processed (K,Na)NbO 3 ‐based ferroelectric films on silicon substrates compositions 0.95(K 0.49 Na Li 0.02 )(Nb 0.8 Ta 0.2 )O ‐0.05CaZrO ‐ x...
An easy-to-implement chemical solution deposition route using EG and CA additives is demonstrated to fabricate phase-pure AgNbO 3 films on Pt/Ti/SiO 2 /Si substrates, where the show an M antiferroelectric phase at room temperature.
The direct integration of crystalline oxide layers with industrial Si substrate, specifically compatible CMOS technology, requires the development relatively simple, low-temperature processing routes below 450 °C. Here, a novel nonstoichiometric approach is proposed to achieve fabrication BiFeO3 films at Of particular importance that, saturation and remnant polarization ∼80 μC/cm2 ∼60 strain as large 1% are obtained. This stands one most impressive values reported for thin films, comparable...
Flexible piezoelectric thin films are raising interest in energy harvesting and wearable electronics, although their direct fabrication is challenging the selection of substrates thermal processing. In this work, we developed flexible lead-free (K, Na)NbO3 (KNN)-based on commercially available metallic foils by sol–gel Stainless steel platinum selected as because good stability, robust flexibility, cost-efficiency. The sol–gel-processed KNN-based both show with bending radii reaching ±3 mm....
Abstract The orientation modulation of ferroelectric materials is a suitable method to optimize material performance. Textured Bi 1‐ x Sm FeO 3 thin films (near the rhombohedral‐orthorhombic (R‐O) phase boundary, that is, = 0, 0.1, 0.12, 0.14, and 0.16) were fabricated using sol‐gel process by introducing LaNiO (LNO) seed layer. Structural characterizations used investigate effect texturing on doping‐induced R‐O transition BiFeO films. It was found occurred from rhombohedral orthorhombic...
Strain-induced phase boundaries were successfully constructed in the (100- x )% Bi 1/2 Na TiO 3 - %BaTiO films by elaborately tailoring film thickness, contributing to remarkable enhancement of piezoelectricity films.
Abstract The strain‐driven morphotropic boundary in BiFeO 3 can enhance the piezoelectric properties. However, tetragonal phase has generally been observed films grown on substrates with intense compressive strain (more than −4.5%) within a limited thickness range (<300 nm) due to significant thickness‐dependent relaxation during film growth at high deposition temperatures. This work proposes suppressing by decreasing temperature. Utilizing hydrothermal method, temperature of epitaxial...
Abstract Rich functionalities have been identified for domain walls (DWs, naturally occurring interfaces in ferroics), e.g., enhanced conductance and photovoltaic effect, which specify the interest their internal structure. The dimension/width type are of particular interest, is carrier functionality. Recent attention has focused on head‐to‐head or tail‐to‐tail charged DWs with greatly conductivity compared to inner domains, found be an order magnitude thicker (tens unit cells) than normal...