A5090173965- Particle Detector Development and Performance
- CCD and CMOS Imaging Sensors
- Astrophysical Phenomena and Observations
- Radiation Detection and Scintillator Technologies
- Advanced Semiconductor Detectors and Materials
- Pulsars and Gravitational Waves Research
- Advanced X-ray Imaging Techniques
- Advanced Optical Sensing Technologies
- Advanced Memory and Neural Computing
- Advanced X-ray and CT Imaging
- High-pressure geophysics and materials
- Astrophysics and Cosmic Phenomena
- Photocathodes and Microchannel Plates
Shizuoka University
2014-2020
This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at charge sensing node, dark current of detector, and capacitive coupling between node SOI circuits. These features lead to low read noise, resulting high energy resolution stable operation pixel. back-gate surface pinning structure neutralized p-well n-well underneath...
We have been developing monolithic active pixel sensors series, named "XRPIX," based on the silicon-on-insulator (SOI) technology, for future X-ray astronomical satellites. The XRPIX series offers high coincidence time resolution ({\rm \sim}1 {\rm \mu}s), superior readout \sim}10 and a wide energy range (0.5--40 keV). In previous study, we successfully demonstrated detection by event-driven of XRPIX2b. here report recent improvements in spectroscopic performance. increased gain reduced noise...
We have been developing monolithic active pixel sensors, X-ray Astronomy SOI XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft sensors for future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) imaging spectroscopy with high angular resolution ($<15$~arcsec), which we can achieve about ten times higher sensitivity in comparison to the previous missions above 10~keV. Immediate readout of...
We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation astronomy satellites. The event trigger output function implemented in each offers microsecond time resolution and enables reduction of non-X-ray background that dominates high energy band above 5--10 keV. A fully depleted with a thick depletion layer back illumination wide coverage 0.3--40 Here, we report recent progress SOIPIX...
Ayaki Takeda∗a, Takeshi Go Tsurua, Takaaki Tanakaa, Hideaki Matsumuraa, Yasuo Araib, Koji Moric, Yusuke Nishiokac, Ryota Takenakac, Takayoshi Kohmurad , Shinya Nakashimae, Shoji Kawahito f Keiichiro Kagawa Keita Yasutomi Hiroki Kamehama and Sumeet Shrestha aDepartment of Physics, Faculty Science, Kyoto University bInstitute Particle Nuclear Studies (IPNS), High Energy Accelerator Research Organization (KEK) cDepartment Applied Engineering, Miyazaki dDepartment School Science Technology,...
This paper reports the spectroscopic performance improvement of silicon-on-insulator (SOI) pixel detector for X-ray astronomy, by introducing a double-SOI (D-SOI) structure. For applications in astronomical observatories, we have been developing series monolithic active sensors, named as "XRPIXs," based on SOI technology. The D-SOI structure has an advantage that it can suppress parasitic capacitance between sensing node and circuit layer, due to which closed-loop gain cannot be increased...
In this paper, we report on the development of a monolithic active pixel sensor for X-ray imaging using 0.2 µm fully depleted silicon-on-insulator (SOI)-based technology to support next generation astronomical satellite missions. Detail regarding low-noise dual-gain SOI based pixels with charge sensitive amplifier and pinned diode structure is presented. The proposed multi-well underneath fully-depleted allows design detector low node capacitance high collection efficiency. Configurations...
We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing sky in energy band of 1-80 keV with angular resolution better than 15``. XRPIX is an upper part stack two sensors imager system onboard FORCE, and covers lower 20 keV. The device consists fully depleted high-resistivity silicon sensor layer detection, low resistivity CMOS readout circuit, buried oxide between, which fabricated 0.2 $\mu$ m...
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer readout CMOS electronics, high-resistivity sensor layer, and SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> between them. This configuration allows us both high-speed circuits thick (on order 100 μm) depletion in device. Each circuit contains trigger output function, with...
This paper presents a low-noise wide-dynamic-range pixel design for high-energy particle detector in astronomical applications. A silicon on insulator (SOI) based is used the detection of wide energy range high particles (mainly X-ray). The sensor has thin layer SOI CMOS readout circuitry and thick high-resistivity vertically stacked single chip. Pixel circuits are divided into two parts; signal sensing circuit event circuit. consisting comparator logic which detect incidence categorizes...
A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit circuit. Event activated when falls detector. In-pixel gain selection implemented a small band particle. Adaptive capability correlated double sampling (CDS) technique kTC canceling charge realizes high
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer readout CMOS electronics, high-resistivity sensor layer, and SiO$_2$ between them. This configuration allows us both high-speed circuits thick (on order $100~\mu{\rm m}$) depletion in device. Each circuit contains trigger output function, with which we can achieve time resolution $\lesssim 10~\mu{\rm s}$. One our key development...