A5101681481- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- VLSI and Analog Circuit Testing
- Electrostatic Discharge in Electronics
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Ion-surface interactions and analysis
- Physical Unclonable Functions (PUFs) and Hardware Security
- Force Microscopy Techniques and Applications
- Radiation Detection and Scintillator Technologies
- Laser-Plasma Interactions and Diagnostics
- Near-Field Optical Microscopy
- Radiation Therapy and Dosimetry
- Semiconductor Quantum Structures and Devices
- Particle Detector Development and Performance
- Reliability and Maintenance Optimization
- Nuclear Materials and Properties
- Advanced Semiconductor Detectors and Materials
- Distributed systems and fault tolerance
- Seismology and Earthquake Studies
- Electric Power Systems and Control
- Geotechnical and Geomechanical Engineering
- Advanced Malware Detection Techniques
- Superconducting and THz Device Technology
Capital Medical University
2025
National Space Science Center
2013-2025
University of Chinese Academy of Sciences
2018-2025
Chinese Academy of Sciences
2013-2024
Astronomy and Space
2024
Institute of Electrical Engineering
2018
Nowadays, linear-shaped batteries have received increasing attentions because the unique one-dimensional architecture offers an omni-directional flexibility. We developed a cable-type flexible rechargeable Zn microbattery based on microscale MnO2@carbon nanotube fiberlike composite cathode and wire anode. The Zn-MnO2 cable exhibits large specific capacity, good rate performance, cyclic stability. capacity of are 322 290 mAh/g MnO2 with aqueous gel polymer electrolyte, corresponding to energy...
Carbon nanotube (CNT) field-effect transistors (FETs) have been considered ideal building blocks for radiation-hard integrated circuits (ICs), the demand which is exponentially growing, especially in outer space exploration and nuclear industry. Many studies on radiation tolerance of CNT-based electronics focused total ionizing dose (TID) effect, while few works single event effects (SEEs) displacement damage (DD) are more difficult to measure but may be important practical applications....
An attractive candidate for space and aeronautic applications is the high-power miniaturizing electric propulsion technology device, gallium nitride high electron mobility transistor (GaN HEMT), which representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT a common structure typically composed high-voltage depletion-mode low-voltage enhancement-mode silicon (Si) MOSFET connected by to realize its enhancement mode. It well known that Si insensitive single event...
Most classical approaches of single event effect rate prediction are based on the rectangular parallelepiped model sensitive volume. However it is not clear about number volume in device when predicting in-flight latchup rate. As for memory device, there two empirical practices to deal with number: one assumes that only whole device; another as much volumes cells. The a 4M-bits SRAM determined 63360 using pulsed laser mapping test this work first. Based assumed and measured number, rates...
Single event burnout (SEB) is a great threat to gallium nitride (GaN) power devices for aerospace applications. This paper dedicated the investigation of SEB mechanism in GaN device using femtosecond pulsed laser. In test, commercial p-GaN was triggered by focused laser beam with wavelength 620 nm, and irradiation-sensitive area identified. We observed that damage modes were consistent results heavy ion experiments. The vertical breakdown drain proposed as dominant SEB. also provide...
The radiation environment in the vicinity of Jupiter is extremely harsh. In this context, dominant high-energy electrons are main cause total ionizing dose that seriously threatens service life electronic devices aboard spacecraft. study, we explore shielding effect aluminum–tantalum composite materials energy spectrum a probe orbiting and planet’s gravity assist orbit at edge solar system by using Monte Carlo simulations. results show when material was sufficiently thick, shield superior to...
By using the pulsed laser single event effect facility and electro-static discharge (ESD) test system, characteristics of "high current", relation with external stimulus relevance to impacted modes latch-up (SEL) transient-induced (TLU) are studied, respectively, for a 12-bit complementary metal–oxide semiconductor (CMOS) analog-to-digital converter. Furthermore, sameness difference in physical mechanism between current" induced by SEL that TLU disclosed this paper. The results show minority...
A study on the single event transient (SET) induced by a pulsed laser in silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented this work. The impacts of energy and collector load resistance SET are investigated detail. waveform, amplitude, width pulse as well collected charge used to characterize response. experimental results discussed detail it demonstrated that significantly affect SiGe HBT. Furthermore, underlying physical mechanisms analyzed investigated,...
Precursor signals for earthquakes, such as radon anomalies, thermal and water level changes, have been studied in earthquake prediction over several centuries. The atmospheric vertical electric field anomaly has observed recent years a new valuable signal short-term prediction. In this paper, physical mechanism of the before was proposed, based on which Wenchuan verified correctness model. Using Monte Carlo simulations, variation concentration with height used to simulate calculate...
The transient photocurrent is one of the key parameters spatial radiation effect photoelectric devices, and energy level defect affects photocurrent. In this paper, by studying deep spectrum a self-designed Schottky diode, properties interface region anode metal AlCu Si caused high-temperature annealing at 150 ℃, 200 ℃ 300 for 1200 h have been quantitatively analyzed. study shows that located position + 0.41 eV on valence band, concentration 2.8 [Formula: see text] 1013/cm2, capture cross...
Space radiation-induced Single Event Effect (SEE) and Electrostatic Discharge (SESD) are two significant phenomena which cause spacecraft anomalies. However, it is difficult to differentiate between them when trying identify the root causes of on-orbit This paper pioneers study similarities difference transients induced by SEE those SESD. The work done with LM124, a well-known operational amplifier. physical mechanisms SESD studied using H-SPICE simulations. characteristics transient...
Thermal Laser Stimulation (TLS) is an efficient technology for integrated circuit defect localization in Failure Analysis (FA) laboratories. It contains Optical Beam-Induced Resistance Change (OBIRCH), Thermally-Induced Voltage Alteration (TIVA), and Seebeck Effect Imaging (SEI). These techniques respectively use the principle of laser-induced resistance change effect. In this paper, a comprehensive model TLS proposed. Firstly, presents analytical expression temperature variation Integrated...
The pulsed laser facility for SEU sensitivity mapping is utilized to study the sensitive regions of a 0.18 μm CMOS SRAM cell. Combined with device layout micrograph, maps cell are obtained. TCAD simulation work performed examine characteristics experiment results discussed and compared electron micrograph information results. present that test technique reliable high precision deep submicron technology device.
Single event effect (SEE) and space electrostatic discharge (SESD) are two important types of effects causing spacecraft anomalies. However, it is difficult to differentiate them identify the root cause on-orbit This paper pioneers comparative study “soft errors” induced by SEE SESD with a well-known static random-access memory (SRAM). The similarity difference physical mechanisms between studied technology computer-aided design (TCAD) simulations. Meanwhile, characteristics relation...
以空间辐射环境中的粒子为研究目标, 研制了用硅微条传感器作为探头、用集成芯片IDE3160进行信号处理的空间粒子探测系统. 该系统采用两片硅微条传感器组成的硅微条探测阵列作为前端探头, 并应用数字化的信号处理方法, 获取空间粒子入射的位置及在硅微条内单位长度沉积的能量(线性能量传递, LET). 从诱发单粒子效应的物理机制角度, 对比重离子和脉冲激光在硅半导体中所产生物理效应的不同. 采用1.064 μm脉冲激光开展系统测试, 获得良好的LET线性结果: 该系统数据采集所需时间为2.47 ms, 可探测到的LET阈值约为0.1 MeV·cm<sup>2</sup>·mg<sup>–1</sup>, 皮尔逊相关系数(PCC)达0.998, 表明系统测量结果与理论设计符合性良好. 该系统动态范围宽、线性度好, 具有较高的集成度、可拓展性及可移植性, 可以搭载在各种空间探测卫星上.
Radiation hardness of one α-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> nanorod array/FTO solar-blind photodetector against 50MeV protons was tested at the Huairou Proton Cyclotron, China. The samples were first subjected to proton irradiation with fluence up 5×10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> p/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ,...
This study uses a pulsed laser to investigate the sensitivity of sequential logic circuit Single-Event-Upset (SEU) under different supply voltages, clock frequencies, and architectures. The experimented is D flip-flop chain manufactured in 65-nm bulk CMOS technology. results indicate that as voltage decreases, SEU sensibility increases, particular at low ranges, it increases significantly. Additionally, effect frequency on mainly related propagation Single-Event-Transients (SETs) are...
The single event effect (SEE) and the total ionizing dose (TID) of a commercial enhancement mode gallium nitride (GaN) high electron nobility transistor (HEMT) with p-type gate structure cascode are studied by using radiation heavy ions <sup>60</sup>Co gamma in this paper. safe operating areas ofSEE, sensitive parameters degradation TID SEE characteristics GaN HEMT device respectively presented. experimental results show that have less influence on device. linear energy transfer...