A5017848587- Quantum and electron transport phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Quantum Computing Algorithms and Architecture
- Quantum Information and Cryptography
- Semiconductor Quantum Structures and Devices
- Cold Atom Physics and Bose-Einstein Condensates
- Quantum optics and atomic interactions
- Nanowire Synthesis and Applications
- Strong Light-Matter Interactions
- Integrated Circuits and Semiconductor Failure Analysis
- Magneto-Optical Properties and Applications
- Magnetic Field Sensors Techniques
- Low-power high-performance VLSI design
PHotonique ELectronique et Ingénierie QuantiqueS
2021-2022
Université Grenoble Alpes
2020-2022
CEA Grenoble
2019-2022
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2019-2022
Institut polytechnique de Grenoble
2020-2022
Laboratoire de Photonique Quantique et Moléculaire
2021-2022
Institut de Recherche Interdisciplinaire de Grenoble
2020-2021
Université Paris Sciences et Lettres
2017
Laboratoire Kastler Brossel
2017
Centre National de la Recherche Scientifique
2017
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitations, allowing for practical, fast and potentially scalable qubit control. Spin susceptibility, however, renders these generally vulnerable electrical noise, which limits their coherence time. Here we report a consisting of single hole electrostatically confined in natural silicon metal-oxide-semiconductor device. By varying the magnetic orientation, reveal existence operation sweet spots where...
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving minimal device overhead is compelling step. Here we report implementation gate-coupled rf reflectometry for dispersive fully functional device. We use p-type double-gate transistor made using industry-standard silicon technology. The first gate confines hole dot encoding qubit, second one helper enabling readout. state measured...
Hole spin qubits are appealing for quantum information processing, because they can be coherently manipulated with radio-frequency electric fields. The underlying physical mechanism relies on spin-orbit coupling (SOC) in the semiconductor's valence band, and operating a hole qubit requires accurate knowledge of SOC-dependent parameters that vary from one to another. To this end, authors employ two-tone-spectroscopy technique exploits same tools used control readout: microwave gate-voltage...
We report the efforts, challenges and perspectives dedicated towards building a reliable spin read-out for Si qubit systems. review several strategies that are pursued in semiconductor quantum circuit community. discuss their pros cons with respect to performance (speed fidelity), integration potential footprint. then address envisioned architecture qubits at large scale.
We discuss the status, challenges and perspectives of "Quantum CAD" for design exploration spin qubits. highlight similarities differences with conventional TCAD micro-electronics, focus on design, physics variability silicon-on-insulator qubits as an illustration.
This paper presents an electrical characterization and a compact modeling of FD-SOI four-gate qubit MOS devices, carried out at room temperature in linear regime. The main figures merit are extracted from average drain current curves using Y - function method. Poisson solver-based simulations performed to interpret the experimental data, particular influence among gates effective channel length modulation. Furthermore, matching analysis between is conducted, variability parameters extracted....
This paper presents a characterization of two-qubit processor in 6-quantum dot array SiGe, from the perspective its quantum information processing capabilities. The analysis includes randomized benchmarking single- and gates, SPAM characterization, Bell's state tomography; all basic functionality required for universal computation. In light our efforts to combine spin qubits with integrated cryogenic electronics, we evaluate qubits' performance metrics at 300mK 740mK. latter temperature lies...
Confining electrons or holes in quantum dots formed the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results commercial nanostructure fabricated using GlobalFoundries 22FDX(TM) industrial process. We demonstrate here that are device by applying combination back- and gate voltages. report our on an effective detuning energy levels varying barrier voltages...
We report here the first measurement of sound-like dispersion density waves propagating on top a correlated photons fluid generated by third order Kerr non-linearity in hot rubidium atomic vapor.
We present recent progress in the implementation of scalable schemes for spin qubit readout one dimensional quantum registers based on fully-depleted silicon-on-insulator (FDSOI) technology. compare two both rf gate reflectometry. The first one, denoted as dispersive readout, minimizes device overhead thereby facilitating scale-up to large registers. second charge-sensing requires additional components but is less sensitive strength interdot coupling operation few-electron regime....
Semiconductor-based architectures where quantum information is encoded in the spin degrees of freedom electrons or holes form an appealing platform for computing. Here we present current state-of-the-art and discuss prospects challenges at scientific technological level.
FD-SOI five-gate (5G) qubit MOS devices are electrically characterized in linear regime down to deep cryogenic temperatures. The Lambert-W function is successfully used for the modelling of such 5G from subthreshold strong inversion. Its applicability demonstrated 20 K. device modeled as a series five independent transistors: "active" one, that directly controls current, and "external" ones, act access resistances. enables accurately determine inversion charge active channel resistance weak...