M. L. V. Tagliaferri

ORCID: 0000-0002-9905-4791
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Quantum and electron transport phenomena
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Cardiac Valve Diseases and Treatments
  • Quantum Computing Algorithms and Architecture
  • Diet and metabolism studies
  • Infective Endocarditis Diagnosis and Management
  • Molecular Junctions and Nanostructures
  • Hyperglycemia and glycemic control in critically ill and hospitalized patients
  • Nutrition, Genetics, and Disease
  • Child Nutrition and Feeding Issues
  • Quantum-Dot Cellular Automata
  • Physics of Superconductivity and Magnetism
  • Spectroscopy and Quantum Chemical Studies
  • Clinical Nutrition and Gastroenterology
  • Quantum Information and Cryptography
  • Cardiac Arrhythmias and Treatments
  • Advanced Battery Technologies Research
  • Silicon Nanostructures and Photoluminescence
  • Photonic and Optical Devices
  • Topological Materials and Phenomena
  • Semiconductor materials and interfaces
  • Surface and Thin Film Phenomena
  • Spectroscopy and Laser Applications

Fondazione Poliambulanza Istituto Ospedaliero
2023

El.En. Group (Italy)
2022

Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2020

Université Grenoble Alpes
2020

CEA Grenoble
2020

Istituto di Fotonica e Nanotecnologie
2020

Institut de Recherche Interdisciplinaire de Grenoble
2020

Delft University of Technology
2018-2019

QuTech
2018-2019

University of Milan
1997-2016

Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable discovery new emergent phenomena provide novel strategies for control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack planar technology. Here we realise an approach overcomes these issues altogether integrate gate-defined dots superconductivity into germanium...

10.1038/s41467-018-05299-x article EN cc-by Nature Communications 2018-07-13

We investigate the magnetic field and temperature dependence of single-electron spin lifetime in silicon quantum dots find a 2.8 ms at 1.1 K. develop model based on spin-valley mixing that Johnson noise two-phonon processes limit relaxation low high respectively. also effect charge linear up to 4 These results contribute understanding are promising for qubit operation elevated temperatures.

10.1103/physrevlett.121.076801 article EN publisher-specific-oa Physical Review Letters 2018-08-14

Germanium quantum wells have long been considered to form an excellent host for spin, superconducting, and topological circuits. As a first experimental step towards planar germanium hybrids, the authors demonstrate gate-tunable Josephson supercurrent that can extend over several micrometers. The is observed become discretized in point contacts due quantization of current carrying modes. These demonstrations provide scope novel hole-based technologies with control down last hole.

10.1103/physrevb.99.075435 article EN Physical review. B./Physical review. B 2019-02-27

The development of quantum electronic devices operating below a few Kelvin degrees is raising the demand for cryogenic complementary metal-oxide-semiconductor electronics (CMOS) to be used as in situ classical control/readout circuitry. Having minimal spatial separation between and hardware necessary limit electrical wiring room temperature associated heat load parasitic capacitances. Here, we report prototypical demonstrations hybrid circuits combining silicon dot transimpedance amplifier,...

10.1063/5.0007119 article EN cc-by Applied Physics Reviews 2020-12-01

We investigate the effect of valley degree freedom on Pauli-spin blockade readout spin qubits in silicon. The splitting energy sets singlet-triplet and thereby constrains detuning range. phase difference controls relative strength intra- inter-valley tunnel couplings, which, proposed scheme, couple singlets polarized triplets, respectively. find that high-fidelity is possible for a wide range differences, while taking into account experimentally observed splittings couplings. also show...

10.1103/physrevb.97.245412 article EN publisher-specific-oa Physical review. B./Physical review. B 2018-06-14

We report the observation at low temperature of a hump in linear transfer characteristic thin film fully depleted silicon-on-insulator transistor when positive bias is applied on back gate under buried oxide. This decrease current correlated with transition from one-subband to two-subband conduction. Electron mobility measurements and calculations are good agreement occurrence intersubband scattering carrier transport two-dimensional inversion layer.

10.1063/5.0007100 article EN Applied Physics Letters 2020-06-15

We report on the valley blockade and multielectron Kondo effect generated by an impurity atom in a silicon nano field device. According to spin-valley nature of tunnelling processes, consistently with those allowed regime, manifestation obeys periodicity 4 electron filling sequence typical emerging at occupation N=1, 2, 3. The emerges under different kinds screening depending filling. By exploiting index conservation SU(4) is deduced without employment external magnetic field. Microwave...

10.1103/physrevb.92.035424 article EN Physical Review B 2015-07-21

We report on the development of a modular system high-frequency printed circuit boards (PCBs) for electrical low-noise characterization multigate quantum devices. The whole measurement setup comprises PCBs operating from room temperature to few kelvins, and custom software control broadband electronics held at cryogenic temperature. coupling scheme tailoring user panel make our platform particularly flexible. At stage, one board hosts readout. It consists in complementary...

10.1109/tim.2016.2555178 article EN IEEE Transactions on Instrumentation and Measurement 2016-05-06

We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study versatility structure single and serial double regimes extract relevant capacitance parameters. address fabrication variability approach which, paired with improved techniques, makes state promising candidate for scalable information architecture.

10.1063/1.4950976 article EN Applied Physics Letters 2016-05-16

The tattoos removal has become an issue upon spread of the tattooing practice worldwide and hindsight regrets. Lasers are typically used for purpose, though some colours such as green considered "recalcitrant" to treatment. In current investigation, we aim at determining efficacy a ink water dispersion, using 5 laser treatments: Nd:YAG nano- picosecond lasers in normal array mode Ruby nanosecond laser, keeping total irradiated energy constant. UV-Vis spectroscopy treated samples indicate...

10.1038/s41598-022-07021-w article EN cc-by Scientific Reports 2022-03-04

Abstract We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as single electron transistor thanks to impurity atom in the channel. A low cryogenic transimpedance amplifier is exploited perform low-frequency down electron, donor and phonon regime simultaneously, not otherwise visible standard stability diagrams. Single tunneling well features emerges rms-noise measurements. Phonons are emitted at high...

10.35848/1882-0786/abc7cf article EN Applied Physics Express 2020-11-05

The prevalence of diabetes in hospitalised patients is not well identified; 2000, 12.5% discharged from US hospitals were diagnosed as having diabetes. In Italy data are limited; Campania, these show a 6% patients, while Emilia Romagna it reaches 21%. These do consider stress hyperglycaemia. There fact three categories people who may have hyperglycaemia during hospitalisation: those with known before hospitalisation; and hyperglycaemia, i.e., occurring hospitalisation, but decreasing at the...

10.1007/s12349-009-0073-0 article EN Mediterranean Journal of Nutrition and Metabolism 2010-02-04

The prevalence of diabetes in hospitalised patients is not well identified; 2000, 12.5% discharged from US hospitals were diagnosed as having diabetes. In Italy data are limited; Campania, these show a 6%

10.3233/s12349-009-0073-0 article EN Mediterranean Journal of Nutrition and Metabolism 2010-02-12

We present a detailed study of the excitonic nonlinearities in InGaAs/GaAs multiple quantum wells based on both stationary and transient pump-and-probe transmission spectroscopy. Bleaching resonance free carrier gain have been observed. A quantitative analysis observed nonlinearity is provided by means rigorous solution Bethe–Salpeter equation for investigated heterostructures.

10.1063/1.119687 article EN Applied Physics Letters 1997-08-18

We present recent progress in the implementation of scalable schemes for spin qubit readout one dimensional quantum registers based on fully-depleted silicon-on-insulator (FDSOI) technology. compare two both rf gate reflectometry. The first one, denoted as dispersive readout, minimizes device overhead thereby facilitating scale-up to large registers. second charge-sensing requires additional components but is less sensitive strength interdot coupling operation few-electron regime....

10.1109/iedm13553.2020.9372090 article EN 2021 IEEE International Electron Devices Meeting (IEDM) 2020-12-12
Coming Soon ...