A5074669731- Advancements in Photolithography Techniques
- Plasma Diagnostics and Applications
- Ion-surface interactions and analysis
- Electron and X-Ray Spectroscopy Techniques
- Optical Coatings and Gratings
- Magnetic properties of thin films
- Advanced Surface Polishing Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Photonic and Optical Devices
- Copper Interconnects and Reliability
- Thin-Film Transistor Technologies
Veeco (United States)
2016-2024
Dependence on ion beam energy, species, and incidence angles is investigated to reduce sidewall re-deposition the magnetic tunnel junction barrier. Experimental simulated etch data, for a representative spin-torque transfer random access memory structure with 40 nm critical dimension 150 pitch, indicated reduction in when operating at: high angle, voltage, Xe as source gas. The Monte Carlo binary collision model simulations showed thickness reduced by ~75% versus Ar at 1 kV energy 30° angle.
Despite several competing technologies for Augmented Reality (AR) displays, surface relief gratings are amongst the most promising solutions. While Reactive Ion Etching (RIE), failed to produce slanted trenches due lack of directional control, Beam (RIBE) is a technique well suited fabricate theses via combination physical and chemical etching processes substrate tilting. Along with advantages RIBE over RIE, such as enhanced control slant angle, achieving full wafer superior uniformity...
As Extreme Ultra Violet lithography (EUVL) is becoming adopted into manufacturing, there an ongoing need to identify and improve the EUV mask multilayer properties that impact reflectivity. Key include roughness inter-diffusion depth at Mo-Si interfaces. During usage, on exposure EUV, interfaces are impacted during thermal cycling, so interfacial stability key. We report use of X-ray reflectivity (XRR) probe Mo/Si multilayers deposited via secondary ion beam deposition (IBD). confirm...
Development progress and roadmap, for high-reflective Mo/Si multilayers EUV mask-blanks, are reviewed. We outline the state-of-the-art in low-defect-density secondary ion beam deposition (IBD), ongoing hardware development performance improvement high-volume manufacturing. further discuss extension of technology to later steps mask manufacturing: highly-uniform 2.5 – 3nm Ru capping layers; patterning novel Ni absorber structures. IBD-deposited films demonstrated with uniformity 0.7% 3σ...
For future nodes, TaN-based absorber layers on EUV mask-blanks, may need to be replaced with thinner of new material systems. Ni and Co based materials are promising candidates owing their high absorption. Ion Beam Etching (IBE) is being explored as an option for patterning these metallic systems that hard etch by Reactive Etch. In this work we expand our initial the IBE films include role beam energy alternative etch-masks both films. We present experimental film level data such uniformity,...
The EUV mask absorber structure is currently ~ 80nm thick TaN-based film, subtractively patterned through resist using dry reactive etch. A thin (2-3nm) Ru layer, below the absorber, protects reflective Mo/Si multilayer, and acts as an etch stop. For future nodes, shadowing from feature considered prohibitive. Accordingly, more highly absorbing materials are being investigated, to allow a thinner reduced 3-D effects. example, Ni, Pt Pd practical with extinction coefficient than double that...
Slanted gratings show high efficiency in coupling light into waveguides, which is critical for optics such as the diffractive optical elements (DOEs) used augmented reality glasses. Fabrication of master molds producing slanted require etch selectivity between SiO<sub>2</sub> and a metal mask. The industry standard trench etch, Reactive Ion Etch (RIE), cannot produce trenches. In this work, we demonstrate fabrication surface relief grating (SRG) with slant angles 30, 45 60 degrees. Using...