A5057047298- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Photolithography Techniques
- Copper Interconnects and Reliability
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Ion-surface interactions and analysis
- Animal Nutrition and Physiology
- Metal and Thin Film Mechanics
- Greenhouse Technology and Climate Control
- Advancements in Semiconductor Devices and Circuit Design
- Plasma Diagnostics and Applications
- Electronic and Structural Properties of Oxides
- Nanofabrication and Lithography Techniques
- Effects of Environmental Stressors on Livestock
- Forensic Entomology and Diptera Studies
- Electron and X-Ray Spectroscopy Techniques
- Advanced Memory and Neural Computing
- 3D IC and TSV technologies
- Insect behavior and control techniques
- Odor and Emission Control Technologies
- Advanced Manufacturing and Logistics Optimization
- High-Temperature Coating Behaviors
- Advanced Data Storage Technologies
- Diptera species taxonomy and behavior
Lam Research (United States)
2016-2023
Lam Research (Austria)
2018-2022
Axcelis Technologies (United States)
2003-2012
Qinetiq (United Kingdom)
2002
Exelis (United States)
2001
Eaton (United States)
1999-2000
BioElectronics (United States)
1998
K Lab (United States)
1994-1998
University of Arkansas at Fayetteville
1987-1995
United States Department of Defense
1981-1994
Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE Si, Ge, C, W, GaN, and SiO2 using directional (anisotropic) plasma-enhanced approach. The analyze these systems by defining an “ALE synergy” parameter which quantifies degree to approaches ideal regime. This inspired ion-neutral synergy concept introduced 1979 paper Coburn Winters [J. Appl. Phys. 50, 5 (1979)]. related energetics...
In this article, we give an overview about the chemical and physical processes that play a role in etching at lower wafer temperatures. Conventionally, plasma rely on formation of radicals, which readily chemisorb surface. Molecules adsorb via physisorption low temperatures, but they lack enough energy to overcome barrier for reaction. The density radicals typical used semiconductor manufacturing is one two orders magnitude than concentration neutrals. Physisorption neutrals therefore,...
High resolution patterns have been fabricated in 〈100〉 silicon by doping selected areas with gallium utilizing an ion microprobe. These doped regions are used as etch mask for subsequent anisotropic etching of silicon. The was performed a KOH:IPA solution at 80–90 °C. resulting rate the is approximately inversely proportional to impurity concentration. At high concentrations difference greater than 1000:1 has measured between virgin and regions. Using this technique features small 30 nm produced.
Daily feed use, water body weight, and mortality of Cobb × male broilers over 8-wk growout periods were measured for 10 consecutive growouts in four commercial-scale broiler houses (121.0 12.1 m each). Polynomial equations developed to relate bird age daily cumulative weekly mortality. Weekly conversion was derived from growth use data depicted by a third-order polynomial equation. Dead weight calculated using the related with three period. Total dead averaged 76 kg per 1,000 birds placed,...
Plasma assisted atomic layer etching (ALE) has recently been introduced into manufacturing of 10 nm logic devices. This implementation ALE is called directional because ions transfer momentum to the surface during removal step. can be described as sputtering a thin modified on unmodified material. In this paper, authors introduce collision cascade based Monte Carlo model theory which evolved for over 50 years [P. Sigmund, Thin Solid Films 520, 6031 (2012)]. To test validity approach,...
Heat and moisture production rates (HP, MP) of modern broiler chickens (Cobb strain males) raised on litter incommercial housing were determined from extensive environmental data 20 houseflocks. Theflock size was 18,800 birds, with a typical growth period 56 days. Regression equations established that predict total,sensible latent HP the houses over common ranges body mass (0.4 to 3.2 kg), house temperature (20 32C),relative humidity (3080%), photoperiod (light or dark). Specific total rate...
Atomic layer etching (ALE) is a multistep process used for removing ultrathin layers of the material. The removal step can be driven by ion bombardment, typically with energies <100 eV and times >1 s. Previously, we reported new ALE operating regime where exposures to were >500 <1 This paper provides simple theoretical basis unifying low energy/long exposure high energy/short regimes. insight captured in scaling relationship that expands concept an processing...
Minimum ventilation rate (MVR) and bird performance of four commercial-scale broiler houses were monitored for 16 consecutive growouts. A complete house clean-out was conducted after the 7th growout again 13th growout. Between clean-outs, only caked litter removed, new bedding added to old litter.
<abstract> <bold><sc>Abstract. </sc></bold>A surface-wetting cooling system was evaluated and compared to a conventional evaporative in commercial, tunnel-ventilated broiler houses during five flocks summer months over three years. Surface wetting (accomplished using low pressure sprinklers, SPRK) pad (PAD) were employed adjacent at the University of Arkansas Applied Broiler Research Farm. With SPRK, overhead sprinklers spaced evenly 6 m apart 1.2 2.4 above litter surface intermittently...
Ion projection lithography (IPL) is being considered for high volume sub-0.25-μm lithography. A novel ion-optical column has been designed exposing 20×20 mm2 fields at 3× reduction from stencil mask to wafer substrates. diverging lens realized by using the as first electrode of column. The second and third form an accelerating field lens. aberrations two lenses (diverging lens) are compensated asymmetric Einzel projecting ion image openings onto substrate with better than 2 mrad...
Sampling of adult stable flies, Stomoxys calcitrans (L.), in cattle feedlots was investigated for 3 yr southeast Nebraska. Three methods estimating fly populations (front leg counts on cattle, a stanchioned-calf technique, and Alsynite fiber glass traps) were compared at three times day. Time sampling significantly affected population estimates 2 the study. The correlation between determined each time is discussed.
Dependence on ion beam energy, species, and incidence angles is investigated to reduce sidewall re-deposition the magnetic tunnel junction barrier. Experimental simulated etch data, for a representative spin-torque transfer random access memory structure with 40 nm critical dimension 150 pitch, indicated reduction in when operating at: high angle, voltage, Xe as source gas. The Monte Carlo binary collision model simulations showed thickness reduced by ~75% versus Ar at 1 kV energy 30° angle.
Seventeen years of electricity and propane fuel use data collected from broiler production houses at the University Arkansas Applied Broiler Research Farm (ABRF) in Northwest were analyzed to quantify relative effect open-curtain versus totally enclosed housing systems on energy use. The ABRF consists four commercial-scale 12- 121-m (40- 400-ft) raises broilers under standard contracts. After first 15 with system, all converted solid-wall system drop ceiling, tunnel ventilation, cooling pads...
An oxygen-doped silicon carbide (O-SiC) barrier film with a dielectric constant of 3.3 was tested using downstream ashing plasma tool. We investigated the interactions three chemistries, and plasmas, O-SiC films. The damage to films were evaluated chemical structure changes examined. While changed into -like film, caused minimum material removal can be controlled within 5%. infrared spectra indicate no noticeable after exposures. Further, electrical properties, including constant, leakage...
Photoresist strip has traditionally been a low technology process step, but is becoming increasingly more complex with the migration to ultra-shallow junctions, 3D structures, double patterning, and high-mobility channels. At junction depths of few tens nanometers, surface effects become important. Small changes conditions can affect resistivity, depth, dopant activation. Advanced high-resolution chemically amplified resist be problematic when used as an implant mask. Ion beam induced chain...
Wet processes using organic solvents are gaining a renewed interest for stripping high dose ion-implanted photoresist (II-PR) in front-end-of-line semiconductor manufacturing because of their excellent selectivity to ultrashallow implanted substrates and novel materials. However, the highly cross-linked resist layer (so-called crust), formed on top sidewalls has very limited solubility unlike underlying nonimplanted (bulk). This study investigates effect UV pre- post-treatment II-PR enabling...
Coulomb interactions in charged particle beams are known to blur beam profiles as the total current is increased. While this has been studied single ion columns, similar studies have not published, so far, for masked projection systems. Experiments were performed using highly transparent stencil grid masks of 40 mm×40 mm area with resolution test patterns central and peripheral positions. Such inserted into lithography machine IPLM-02 ‘‘Alpha projector’’ operated at 5× ion–optical reduction...
Diapause of the horn fly, Haematobia irritans (L.), was investigated for 4 yr in central Missouri. The earliest diapause detected 18 August. occurred during August, September, and October. Most (91%) diapausing pupae were produced from eggs laid September. Generally, fall, incidence fly increased as both temperature photophase decreased.
High dose, ultra shallow junction implant resist strip requires minimal substrate loss and dopant loss. Silicon recess (silicon loss) under the source/drain (S/D) extensions increases S/D extension resistance decreases drive currents by changing profile. ITRS surface preparation technology roadmap [1] targets silicon to be 0.4Å per cleaning step for 45nm 0.3Å 32nm generation. Fluorine-containing chemistries which are often used enhance implanted residue removal result in unacceptable A...
In spite of the comparatively modest level effort devoted to ion projection lithography, results obtained so far indicate that technology is highly promising. Accordingly, a $36M program has been launched in Europe develop full field, IPL process tool.
Field developmental time of the horn fly, Haematobia irritans (L.), was investigated for 3 years in Missouri, and data were analyzed by determining least-squares regression between mean temperature during development rate. The pooled predictive equation calculated to be: 1/T = −0.04769 + 0.005168 θ; T required (in days) θ (°C) development.