A5053034612- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Ga2O3 and related materials
- Graphene research and applications
- GaN-based semiconductor devices and materials
- Information and Cyber Security
- Perovskite Materials and Applications
- Graphite, nuclear technology, radiation studies
- Silicon Nanostructures and Photoluminescence
- Phosphodiesterase function and regulation
- Polyoxometalates: Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Molecular Junctions and Nanostructures
- Digital Media Forensic Detection
- Nanowire Synthesis and Applications
- Advanced Steganography and Watermarking Techniques
- Advanced Malware Detection Techniques
- ZnO doping and properties
University of California, Berkeley
2022-2025
Bangladesh University of Engineering and Technology
2018-2025
Lawrence Berkeley National Laboratory
2022-2025
Noakhali Science and Technology University
2024
North Carolina State University
2023
Tellurium (Te) is attractive for p-channel transistors due to its high hole mobility. Despite having a low thermal budget suitable back-end-of-line (BEOL) monolithic integration, the practical realization of Te hindered by stability. In this work, we investigate stability thin films grown via scalable evaporation. Our findings identify ruthenium as more thermally stable contact p-type transistors, capable withstanding temperatures up 250 °C. Ruthenium exhibits significantly lower diffusivity...
Exciton-exciton annihilation (EEA) is a nonradiative process commonly observed in excitonic materials at high exciton densities. Like Auger recombination, EEA degrades luminescence efficiency densities and causes roll-off light-emitting devices. Near-unity photoluminescence quantum yield has been demonstrated transition metal dichalcogenides (TMDCs) all with optimal band structure modification mediated by strain. Although the recombination pathways TMDCs are well understood, practical...
High contact resistance has been a bottleneck in developing high-performance transition-metal dichalcogenide (TMD) based
Keeping dependencies up-to-date prevents software supply chain attacks through outdated and vulnerable dependencies. Developers may use packages' dependency update practice as one of the selection criteria for choosing a package dependency. However, lack metrics characterizing makes this assessment difficult. To measure characteristics packages, we focus on management aspect propose two metrics: Time-Out-Of-Date (TOOD) Post-Fix-Exposure-Time (PFET), to updatedness dependencies, respectively....
Security sensitive APIs provide access to security-sensitive resources, e.g., the filesystem or network resources. Including such API calls -- directly through dependencies increases application's attack surface. An example of a phenomenon is Log4Shell, which rendered many applications vulnerable due network-related capabilities (JNDI lookup) in log4j package. Before Log4Shell incident, alternate logging libraries were available that do not make JNDI lookup calls. The impact an incident...
This paper presents a comprehensive investigation of electrostatics and transport characterization GaN double-channel (DC) MOS-HEMT. Upon derivation polynomial analytical expression establishing relationship between the Fermi level 2-D electron gas density (2DEG), sheet carrier applied gate voltage has been obtained. To confirm validity model in both subthreshold strong inversion regions, charge profile capacitance–voltage have attained from self-consistent simulation incorporating quantum...
This article presents a comprehensive analytical investigation of electrostatic and transport phenomena GaN nanowire (NW) junctionless (JL) MOSFET. The evolution the proposed model involves solution quasi 2-D Poisson equation with appropriate boundary conditions to obtain effective surface potential as function gate voltage. mobile carrier density derived from is used formulate core well analyze characteristics for various physical device parameters. Short channel effect certain nonideal...
Type 2 Diabetes Mellitus (T2DM) occurs due to a complex relationship of genetic, environmental, and physiological factors, encompassing insufficient pancreatic insulin synthesis, peripheral resistance, diverse molecular pathways. The transmembrane glycoprotein ectonucleotide pyrophosphatase phosphodiesterase 1 (ENPP1) plays role in regulation, with the K121Q (rs1044498) variant on ENPP1 gene being subject extensive study its potential association T2DM. To comprehensively evaluate this...
Abstract Bulk γ‐InSe has a direct bandgap of 1.24 eV, which corresponds to near infrared wavelengths ( λ = 1.0 µm) useful in optoelectronic applications from biometric detectors silicon photonics. However, its potential for is largely untapped due part the lack quantitative studies optical properties. Here, unusually low absorptance and high photoluminescence quantum efficiency single‐crystalline InSe flakes with thickness hundreds nanometers are studied. emits brightly at room temperature...
Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional emitting diodes emit photons with energies near the band edge where corresponding photodetectors lack responsivity. On other hand, previously reported hot carrier electroluminescent devices utilizing a reverse biased diode require high operating voltages. Here, we investigate electroluminescence in metal–oxide–semiconductor capacitors...
In this paper, the electrostatic characteristics of enhancement mode GaN double channel MOS-HEMT has been investigated. A polynomial analytical expression establishing a relationship between Fermi level and two-dimensional electron gas density developed for device first time. This utilized to develop sheet carrier applied gate voltage. self-consistent simulation incorporating quantum mechanical effect carried out obtain charge profile capacitance-voltage profile. The variation conduction...
<title>Abstract</title> Two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), are emerging key materials for next-generation electronics, addressing challenges in the miniaturization of silicon-based technologies. Despite progress scaling-up 2D materials, integrating them into functional devices remains challenging, particularly context three-dimensional integration. Here, we present a scalable method growing high-quality mono- to few-layer MoS2 on large wafers using...
This paper presents an analytical investigation of the drain current model for symmetric short channel InGaAs gate-all-around (GAA) MOSFETs valid from depletion to strong inversion using a continuous expression. The development core is facilitated by solution quasi-2D Poisson equation in doped channel, accounting interface trap defects and fixed oxide charges. Correction effects such as threshold voltage roll-off, induced barrier lowering, subthreshold slope degradation later introduced,...
Steganography ensures secure transmission of digital messages, including image steganography where a secret is hidden within non-secret cover image. Deep learning-based methods in have recently gained popularity but are vulnerable to various attacks. An adversary with varying levels access the vanilla deep model can train surrogate using another dataset and retrieve images. Moreover, even when uncertain about presence information, distinguish carrier from unperturbed one. Our paper includes...
Formation of charged trions is detrimental to the luminescence quantum efficiency colloidal dot (QD) thin films as they predominantly undergo nonradiative recombination. In this regard, control trion formation interest for both fundamental characterization quasi-particles and performance optimization. Using CdSe/CdS QDs a prototypical material system, here we demonstrate metal-oxide-semiconductor capacitor based on QD studying background charge effect lifetime. The concentration ratio...
This paper presents a physically based analytical model for electrostatic properties of GaN Nanowire (NW) Junctionless (JL) MOSFET. The evolution the involves solution quasi two dimensional Poisson equation with appropriate boundary condition incorporating influence NW radius, oxide thickness and doping concentration. results in relationship between surface potential applied gate voltage. extraction facilitates calculation mobile carrier density which is subsequently used to formulate...