Matthias Müllenborn

ORCID: 0000-0003-3947-4695
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About
Contact & Profiles
Research Areas
  • Laser Material Processing Techniques
  • Advanced Surface Polishing Techniques
  • Advanced MEMS and NEMS Technologies
  • Silicon Nanostructures and Photoluminescence
  • Advanced Semiconductor Detectors and Materials
  • Semiconductor materials and interfaces
  • Semiconductor Quantum Structures and Devices
  • Mechanical and Optical Resonators
  • Diamond and Carbon-based Materials Research
  • Photonic and Optical Devices
  • Laser-induced spectroscopy and plasma
  • Surface Roughness and Optical Measurements
  • Thin-Film Transistor Technologies
  • Electrowetting and Microfluidic Technologies
  • Semiconductor Lasers and Optical Devices
  • Photorefractive and Nonlinear Optics
  • 3D IC and TSV technologies
  • Force Microscopy Techniques and Applications
  • Sensor Technology and Measurement Systems
  • Genomics and Rare Diseases
  • Innovative Energy Harvesting Technologies
  • Ion-surface interactions and analysis
  • Integrated Circuits and Semiconductor Failure Analysis
  • Chalcogenide Semiconductor Thin Films
  • Near-Field Optical Microscopy

Novo Nordisk (Denmark)
2020-2024

Novo Nordisk (Switzerland)
2023

Technical University of Denmark
1994-2005

University of California, Los Angeles
1991-1994

Siemens (Germany)
1991

Abstract Background Hypoglycaemia is the most frequent complication of treatment with insulin or secretagogues in people diabetes. Severe hypoglycaemia, i.e. an event requiring external help because cognitive dysfunction, associated a higher risk adverse cardiovascular outcomes and all‐cause mortality, but underlying mechanism(s) are poorly understood. There also gap understanding clinical, psychological health economic impact ‘non‐severe’ hypoglycaemia glucose level below which causes harm....

10.1111/dme.14240 article EN cc-by-nc-nd Diabetic Medicine 2020-01-23

Hypoglycaemia is a significant burden to people living with diabetes and an impediment achieving optimal glycaemic outcomes. The use of continuous glucose monitoring (CGM) has improved the capacity assess duration level hypoglycaemia. personal impact sensor-detected hypoglycaemia (SDH) unclear. Hypo-METRICS observational study designed define threshold sensor that provides sensitivity specificity for events experience as hypoglycaemia.We will recruit 600 participants: 350 insulin-treated...

10.1111/dme.14892 article EN cc-by-nc-nd Diabetic Medicine 2022-05-28

Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous probes display three-peak profile after etching in potassium hydroxide. Numerical simulations the electromagnetic field around probe–sample interaction region are used to explain experimental observations. With an probe, lines 35 nm width were transferred into layer.

10.1063/1.365847 article EN Journal of Applied Physics 1997-07-01

We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize thin layer. Lines 110 nm in width, induced by the near field, were observed after etching potassium hydroxide. The fibers can also induce oxidation without light exposure, manner similar an atomic force microscope, and linewidths 50 have achieved this way.

10.1063/1.117781 article EN Applied Physics Letters 1996-07-22

We present microfabrication and characterization of truly three-dimensional (3-D) diffuser/nozzle structures in silicon. Chemical vapor deposition (CVD), reactive ion etching (RIE), laser-assisted are used to etch flow chambers elements. The behavior the fabricated elements dependence efficiency on structure geometry has been investigated. large freedom 3-D micromachining combined with rapid prototyping allows one characterize optimize structures.

10.1109/84.557529 article EN Journal of Microelectromechanical Systems 1997-03-01

A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, substrate, placed in chlorine ambience, is locally heated above its melting point by continuous-wave and translated high-resolution direct-current motor stages. Only the molten reacts spontaneously with molecular chlorine, resulting trenches width of laser-generated melt. Trenches have etched less than 70 nm. To explain functional dependence melt size absorbed power, calculations based...

10.1063/1.114257 article EN Applied Physics Letters 1995-05-29

Since 72% of rare diseases are genetic in origin and mostly paediatrics, newborn screening represents a diagnostic "window opportunity". Therefore, many gNBS initiatives started different European countries. Screen4Care is research project, which resulted joint effort between the Union Commission Federation Pharmaceutical Industries Associations. It focuses on artificial intelligence-based tools will be applied to large population about 25.000 infants. The neonatal strategy based targeted...

10.1371/journal.pone.0293503 article EN cc-by PLoS ONE 2023-11-22

Deep-level defects in as-grown, ingot-annealed, and wafer-annealed samples of semi-insulating gallium arsenide have been investigated by spatially resolved measurements room-temperature photoluminescence, infrared absorption, free-carrier lifetime, resistivity. High-temperature ingot annealing mainly causes a homogenization the EL2 distribution. Rapid cooling from wafer process at T>900 °C suppresses formation previously lifetime-limiting recombination center. After defect may be...

10.1063/1.348405 article EN Journal of Applied Physics 1991-04-15

A focused laser beam has been used to induce oxidation of hydrogen-passivated silicon. The scanning removes the hydrogen passivation locally from silicon surface, which immediately oxidizes in air. process studied as a function power density and excitation wavelength on amorphous crystalline surfaces order determine depassivation mechanism. minimum linewidth achieved is about 450 nm using writing speeds up 100 mm/s. fully compatible with local by probe lithography. Wafer-scale patterns can...

10.1063/1.116823 article EN Applied Physics Letters 1996-11-11

The application of laser direct etching silicon in processing devices for microelectromechanical systems is discussed. write system presented this paper features high writing speed, resolution, and large access range. possibilities micromachining truly three-dimensional structures, rapid prototyping, on non-planar substrates, complementary post-processing through are demonstrated. Examples include prototypes micromachined diffuser/nozzle elements illustrating the potential microfluidic...

10.1109/sensor.1995.717124 article EN Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95 2005-08-24

Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band-gap energy. This makes laser difficult since high typically require either a pulsed or frequency-doubled continuous-wave laser. A new method reported which enables us to do lithium niobate sub-band-gap photons. Using scan speeds, moderate power densities, results in volume removal rates excess 106μm3/s. fast micromachining small piezoelectric structures, simple etching grooves for...

10.1063/1.113470 article EN Applied Physics Letters 1995-05-22

Structures have been etched in poly-silicon and amorphous silicon deposited on oxide by laser direct writing. These patterns can be written with a high resolution transferred to the underlying material via reactive ion etching. Three-dimensional structures obtained multiple exposure of mask. Due fast turnaround time writing processes, this technique applied for rapid prototyping large-scale structures.

10.1088/0960-1317/6/1/009 article EN Journal of Micromechanics and Microengineering 1996-03-01

The first differential silicon microphone is presented. This capacitive working device consists of two backplates with a membrane in between. Due to the balanced arrangement air gap can be minimized. Thus, higher electrical field and sensitivity achieved for low voltages. A dedicated process sequence has been developed order get optimum mechanical properties all structural layers. Furthermore, sandwich structure achieve reproducible, very sensitive thickness only 0.5 /spl mu/m stress 45 MPa....

10.1109/memsys.2001.906474 article EN 2002-11-13

Lifetimes at Ga1−xInxP/GaAs heterojunction interfaces determined by photoluminescence power dependence measurements and diffusion model calculations have been correlated to dislocation densities derived from high-resolution x-ray diffraction measurements. The are used determine lifetimes in the region of misfit dislocations fitting experimental dependencies buried-layer photoluminescence. High-resolution reveals through broadening peaks due slight lattice tilts introduced dislocations....

10.1063/1.356264 article EN Journal of Applied Physics 1994-03-01

Abstract Background Recent developments in physiological and digital biomarkers provide an opportunity to shift the first diagnostic steps home‐setting, thus allowing earlier detection treatment of Alzheimer’s disease (AD). Blood‐based, magnetic resonance imaging, electrophysiological, microbiome have shown great promise call for evaluation their accuracy, feasibility safety primary care community. The aim PREDICTOM is develop test accuracy artificial intelligence (AI) driven screening...

10.1002/alz.087279 article EN cc-by Alzheimer s & Dementia 2024-12-01

Recombination and generation at slightly mismatched heterojunctions under optical excitation conditions are investigated with a model based on the ambipolar diffusion equation. This is used to fit experimental photoluminescence power dependencies in order analyze interface-related parameters as function of lattice mismatch. Power derived for directly excited surface layers generated indirectly by carrier or photon recycling through interface region. Experimental results presented AlGaAs/GaAs...

10.1063/1.354193 article EN Journal of Applied Physics 1993-11-01

Laser direct writing has been used to pattern silicon masking layers on highly structured substrates. etching of in chlorine and laser-induced local oxidation hydrogen-passivated have applied write the patterns into layer which served as an etch mask for wet dry processes.

10.1088/0960-1317/7/3/011 article EN Journal of Micromechanics and Microengineering 1997-09-01
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