A5105405521- Magnetic confinement fusion research
- Radiation Detection and Scintillator Technologies
- Nuclear Physics and Applications
- Radiation Effects in Electronics
- Particle Detector Development and Performance
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- Particle accelerators and beam dynamics
- Superconducting Materials and Applications
- ZnO doping and properties
- Radiation Therapy and Dosimetry
- Physics of Superconductivity and Magnetism
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- X-ray Spectroscopy and Fluorescence Analysis
- Silicon Carbide Semiconductor Technologies
- Metal and Thin Film Mechanics
- Fusion materials and technologies
- Laser-Plasma Interactions and Diagnostics
- Sunflower and Safflower Cultivation
- Ferroelectric and Piezoelectric Materials
- Acoustic Wave Resonator Technologies
- Electronic and Structural Properties of Oxides
- Magnetic properties of thin films
- Thin-Film Transistor Technologies
Universidad de Sevilla
2016-2025
Centro Nacional de Aceleradores
2016-2025
Universidad Autónoma de Occidente
2025
Junta de Andalucía
2008-2024
Consejo Superior de Investigaciones Científicas
2005-2023
Res Publica (Norway)
2022
Max Planck Society
2019
Andalusian Institute of Agricultural and Fisheries Research and Training
2014-2019
Max Planck Institute for Plasma Physics
2019
Japan External Trade Organization
2015
The development of advanced detection systems for charged particles in laser-based accelerators and the need precise time flight measurements have led to creation detectors using ultra-thin plastic scintillators, indicating their use as transmission with low energy loss minimal dispersion protons around a few MeV. This study introduces new system designed by Institute Instrumentation Molecular Imaging timing applications at National Accelerator Center Seville. includes an EJ-214 scintillator...
A simple model for the instrument function of scintillator-based fast-ion loss detectors (FILD) has been developed which accounts orbit trajectories in 3D detector geometry and scintillator response. It allows us to produce synthetic FILD signals a direct comparison between experiments simulations. The uses weight formalism relate velocity-space distribution losses reaching pinhole pattern obtained experimentally, can be understood as distortion due finite resolution system. tool recover...
Near-infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical-access memories, and sensing. We access ensemble G-color-center formation dynamics radiation-induced atomic disorder a series of megaelectronvolt proton-flux conditions. The photoluminescence results reveal that the G formed more efficiently by pulsed-proton irradiation than continuous-wave proton irradiation. enhanced transient excitations dynamic annealing within nanoseconds...
A new approach is presented to produce amorphous porous silicon coatings (a-pSi) with closed porosity by magnetron sputtering of a target. It shown how the use He as process gas at moderated power (50–150 W RF) promotes formation nanometric pores during growth films. The oblique-angle deposition demonstrates possibility aligning and orientating in one direction. control allows pore size distribution. films have been characterized variety techniques, including scanning transmission electron...
Gain suppression induced by excess carriers in Low Avalanche Detectors (LGADs) has been investigated using 3 MeV protons a nuclear microprobe. In order to modify the ionization density inside detector, Ion Beam Induced Current (IBIC) measurements were performed at different proton beam incidence angles between 0° and 85°. The experimental results have analyzed as function of projected on multiplication layer, finding that increase leads greater gain suppression. For bias voltages close onset...
Abstract Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect of silicon with ion pulses from a laser accelerator in the intensity range 10 19 W cm −2 flux levels up 22 ions s −1 , about five orders magnitude higher than conventional implanters. Low energy plasma expansion laser-foil target are implanted near surface then diffuse into samples locally pre-heated by high same laser-ion pulse. Silicon crystals...
The heterostructure and compositional depth profile of low-temperature processed (Pb0.76Ca0.24)TiO3 (PCT24) ferroelectric thin films have been studied in the present work. were prepared by ultraviolet (UV) sol–gel photoannealing (also called photochemical solution deposition, PCSD) onto platinized silicon substrates crystallized at 450 °C air oxygen atmospheres. Despite using such a low temperature, analysis carried out X-ray photoelectron spectroscopy (XPS) revealed total lack organic rests...
Lead-based, perovskite phase-pure ferroelectric thin films have been prepared without using any PbO-excess addition by ultraviolet sol−gel photoannealing at 450 °C. The conditions imposed this method avoid the volatilization of lead from ceramic composition while leading to gradient-free heterostructures and remarkable dielectric properties in crystalline films.
A conceptual design of a reciprocating fast-ion loss detector for ITER has been developed and is presented here. Fast-ion orbit simulations in 3D magnetic equilibrium up-to-date first wall have carried out to revise the measurement requirements lost alpha monitor ITER. In agreement with recent observations, here suggest that pitch-angle resolution ∼5° might be necessary identify mechanisms. Synthetic measurements including realistic alpha-particle as well neutron gamma fluxes predict...
This paper reports on the fabrication, simulation, and charge collection characteristics of a new generation cylindrical silicon microdosimeters fabricated SOI wafers. The devices consist an array p+ electrodes surrounded by trench n+ creating well defined, sensitive volumes. A first batch microsensors with 5.4 μm active thickness has been successfully fabricated. are fully functional good diode behavior depletion voltage only 3 V. Their have investigated using IBIC technique protons alpha...