Shubham Kumar

ORCID: 0000-0003-4228-9802
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About
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Research Areas
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • Microplastics and Plastic Pollution
  • Advancements in Semiconductor Devices and Circuit Design
  • MXene and MAX Phase Materials
  • Additive Manufacturing Materials and Processes
  • Pharmaceutical and Antibiotic Environmental Impacts
  • Additive Manufacturing and 3D Printing Technologies
  • Hydrocarbon exploration and reservoir analysis
  • Enhanced Oil Recovery Techniques
  • Magnetic properties of thin films
  • Plant Water Relations and Carbon Dynamics
  • Ferroelectric and Piezoelectric Materials
  • biodegradable polymer synthesis and properties
  • Industrial Automation and Control Systems
  • Hydrology and Watershed Management Studies
  • Climate change impacts on agriculture
  • Sleep and Work-Related Fatigue
  • Nanofabrication and Lithography Techniques
  • Coal Properties and Utilization
  • Infections and bacterial resistance
  • Urban Stormwater Management Solutions
  • 3D IC and TSV technologies
  • Millimeter-Wave Propagation and Modeling

University of Stuttgart
2022-2025

Gautam Buddha University
2024

Indian Institute of Technology Kanpur
2022-2024

National Institute of Technical Teachers Training and Research
2024

Motilal Nehru National Institute of Technology
2022-2024

Indian Institute of Technology Bombay
2022-2024

Monash University
2024

Central University of Rajasthan
2022-2023

Max Super Speciality Hospital
2023

Rochester Institute of Technology
2023

Lithologically diverse shales were collected from two different proliferous basins, namely, the Korba (SM) and Raniganj Basin (BK) in India, experimented with at an isothermal condition using CO2 N2 as probe gases low-pressure gas adsorption method, demonstrating disparity between shale pore attributes surface roughness. The is one of potential sites for storage production India needs to be explored terms statistics. Literature reviews demonstrate that characteristics changes depth, organic...

10.1021/acs.energyfuels.3c03374 article EN Energy & Fuels 2024-02-22

Microplastics (MPs) have emerged as persistent toxicants in the recent decade. MPs are reported to present different samples such soil, water, wastewater, and human including placenta, urine etc. Recent studies its presence drinking water. water is of concern research because associated with several toxicities animal models human. The presented review focused on understanding abundance, sources, detection, analysis, biotechnological approaches for degradation. paper discusses distribution,...

10.1016/j.cscee.2024.100640 article EN cc-by-nc-nd Case Studies in Chemical and Environmental Engineering 2024-02-09

10.33545/26648717.2025.v7.i1c.318 article EN International Journal of Research in English 2025-01-01

10.1109/jxcdc.2025.3547797 article EN cc-by-nc-nd IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 2025-01-01

Kashi is known as ancient living city of the world and famous abode Lord Shiva. Rishi Maharshi all sects religion do Yog sadhana here since beginning weather Sage Agastya in Satyug or Vyas Dwapar. There are many scriptural descriptions related to genesis worship Shiva also about creation Kashi. Poet Charu Sheel Singh records his poem spiritual cultural centre ‘city death’. The rare combination mystical, mythical, historical philosophical imagination Prof. creates a which not entirely new but...

10.22161/ijels.102.19 article EN International Journal of English Literature and Social Sciences 2025-01-01

The Ferroelectric Field-Effect Transistor (FeFET) is an emerging Non-Volatile Memory (NVM) technology enabling novel data-centric architectures that go far beyond von Neumann principles. Nevertheless, FeFET devices exhibit significant variations can severely restrict their applicability. Temperature further exacerbates variation effects because it degrades ferroelectric parameters. Hence, indispensable to investigate and model design-time variations, run-time stochastic due spatial...

10.1109/tcsi.2023.3265427 article EN IEEE Transactions on Circuits and Systems I Regular Papers 2023-04-21

Hyperdimensional computing (HDC) is an emerging learning paradigm that has gained a lot of attention due to its ability train with fewer data, lightweight implementation, and resiliency against errors. Similar the brain, HDC can learn patterns in one iteration from small training data by similarity metric such as Hamming distance. Ferroelectric Field-Effect-Transistor (FeFET) based Ternary Content Addressable Memory (TCAM) been demonstrated excellent candi-date for this metric. However,...

10.1109/vlsi-soc54400.2022.9939626 article EN 2022-10-03

For the first time, we propose a novel circuit for dynamic 2-input XNOR gate that merely employs two n-type Fully-Depleted Silicon on Insulator (nFDSOI) FETs along with one additional precharging pFDSOI FET. Our design exploits threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> ) tuning feature (i.e., 1ow-V and high-V states) of FDSOI FET using back bias as input. The front is used second proposed reduces number...

10.1109/iscas48785.2022.9937329 article EN 2022 IEEE International Symposium on Circuits and Systems (ISCAS) 2022-05-28

Neuromorphic and in-memory computing architectures using emerging nonvolatile memories (e-NVMs) have emerged as promising solutions for area-and energy-efficient deep neural network (DNN) accele-rators. However, the inherent nonideal behavior of e-NVMs such limited tuning precision (for multibit synapses), nonlinearity, temporal (cycle-to-cycle), spatial (device-to-device) variability significantly degrades performance DNN accelerators. Recently, binary networks (BNNs), with 1-bit weights...

10.1109/ted.2024.3405472 article EN IEEE Transactions on Electron Devices 2024-06-03

In this paper, we propose a non-traditional design of dynamic logic circuits using Fully-Depleted Silicon on Insulator (FDSOI) FETs. FDSOI FET allows the threshold voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>t</sub></i> ) to be adjustable (i.e., low-Vt and high-Vt states) by back gate bias. Our utilizes front gates an as input terminals proposes (like; NAND, NOR, AND, OR, XOR, XNOR) half adder full adder). It requires...

10.1109/jxcdc.2023.3269141 article EN cc-by IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 2023-04-21

In this article, we have developed a comprehensive modeling framework to explain the switching characteristics of BEOL-compatible ferroelectric field-effect transistor (FeFET) with an amorphous IGZO channel. Our TCAD-based framework, calibrated against measurement data, jointly incorporates: 1) distributed channel; 2) physics-based nucleation-limited dynamics model for multidomain polarization ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/ted.2023.3321860 article EN IEEE Transactions on Electron Devices 2023-10-13

Monolithic 3D integration represents a major breakthrough in the quest for high-density, energy-efficient systems. Ferroelectric thin-film transistors (Fe-TFT) have garnered increasing attention due to their outstanding capability realizing brain-inspired computing and compatibility with back-end-of-the-line (BEOL) fabrication process. Nevertheless, monolithic ICs inevitability suffer from excessive temperatures which degrade device characteristics degrading system performance. In this work,...

10.1109/iedm45741.2023.10413851 article EN 2022 International Electron Devices Meeting (IEDM) 2023-12-09

&lt;p&gt;We have developed a comprehensive modeling framework to explain the switching characteristics of BEOL-compatible FeFET with an amorphous IGZO channel. Our TCAD-based framework, calibrated against measurement data, jointly incorporates a) distributed channel, b) physics- based nucleation-limited dynamics model for multi- domain ferroelectric polarization (PFE) and c) domain-domain interaction. To our knowledge, this is first demonstration physics-based FeFET. reproduces explains...

10.36227/techrxiv.22692940.v1 preprint EN cc-by 2023-04-28

Monolithic 3-D (M3D) integration of logic circuits and memory devices has been the most desired strategy for overcoming von Neumann bottleneck. Amorphous indium gallium zinc oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${a}$ </tex-math></inline-formula> -IGZO) is a suitable low-temperature material M3D integration. A ferroelectric field-effect transistor (FeFET) addresses nonvolatile challenges...

10.1109/ted.2023.3327034 article EN IEEE Transactions on Electron Devices 2023-11-06

Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity machine learning data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for implementing TCAM owing to their high ON/OFF ratio, non-volatility, CMOS compatibility. However, conventional single-gate FeFETs (SG-FeFETs) suffer from relatively write voltage, low endurance, potential read disturbance, face scaling challenges. Recently,...

10.1109/dac56929.2023.10247849 article EN 2023-07-09

With the rapidly expanding applications of artificial intelligence (AI), quest for hardware acceleration to foster high-speed and energy-efficient AI computation has become ever more important. In this work, we first explore performance energy advantages employing classical with conventional systolic multiply-accumulate (MAC) arrays. We then highlight growing importance monolithic 3D integration as a transformative strategy, moving beyond constraints von Neumann architectures. also discuss...

10.1109/vlsi-soc57769.2023.10321854 article EN 2023-10-16

&lt;p&gt;Today's data-centric applications are incompatible with the predominant compute-centric computer architectures. The small on-chip memories of architecture demand many energy-costly data transfers exposing von-Neumann bottleneck. Ferroelectric Field-Effect Transistor (FeFET) is an emerging Non-Volatile Memory technology enabling novel architectures that go far beyond von-Nuemann principles. FeFETs very promising for a wide range starting from to in-memory computing and even...

10.36227/techrxiv.21230789.v1 preprint EN 2022-10-05

With the emergence of Internet Things (IoT), deep neural networks (DNNs) are widely used in different domains, such as computer vision, healthcare, social media, and defense. The hardware-level architecture a DNN can be built using an in-memory computing-based design, which is loaded with weights well-trained model. However, hardware-based systems vulnerable to model stealing attacks where attacker reverse-engineers (REs) extracts In this work, we propose energy-efficient defense technique...

10.1109/jxcdc.2022.3217043 article EN cc-by IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 2022-11-03
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