A5013957990- Radiation Effects in Electronics
- Radiation Detection and Scintillator Technologies
- Nuclear Physics and Applications
- Nuclear reactor physics and engineering
- Semiconductor materials and devices
- Crystallization and Solubility Studies
- Graphite, nuclear technology, radiation studies
- Radiation Therapy and Dosimetry
- X-ray Diffraction in Crystallography
- Particle Detector Development and Performance
- Muon and positron interactions and applications
- VLSI and Analog Circuit Testing
- Synthesis and properties of polymers
- Radioactivity and Radon Measurements
- Low-power high-performance VLSI design
- Prion Diseases and Protein Misfolding
- Hepatitis B Virus Studies
- Advanced Radiotherapy Techniques
- SARS-CoV-2 detection and testing
- Protein purification and stability
- Innovative Microfluidic and Catalytic Techniques Innovation
- Pancreatic function and diabetes
- Polymer crystallization and properties
- Adsorption and Cooling Systems
- Physical Unclonable Functions (PUFs) and Hardware Security
Kawasaki Heavy Industries (Japan)
2025
National Institute of Advanced Industrial Science and Technology
2023-2024
Kyushu University
2018-2024
National Institute of Technology, Kagawa College
2016-2017
National Institute of Technology
2015
Nara Institute of Science and Technology
2002
Fukuoka Women's University
1995-2000
Asahi Chemical & Industry (Japan)
1990-1994
To estimate the particle size of hepatitis C virus (HCV), a major causative agent post-transfusion non-A, non-B hepatitis, we filtered plasma or serum samples through microporous cellulose fibres with different pore sizes. The amount HCV particles in before and after filtration was determined by quantitative reverse transcriptase polymerase chain reaction (PCR) method. Since there is no biological assay for HCV, except that chimpanzees, titre obtained from PCR method used an equation...
Global warming is an urgent problem that must be solved immediately, and it said the cause CO2 emitted by human activities. DAC a technology directly captures from air can contribute to reduction of in atmosphere. The required reduce cost making equipment compact as much possible, realize practical use with energy saving. KHI developing using solid adsorbent. adsorbent amine impregnated porous material. Moving bed has been developed for capture flue gas. Therefore, moving applied make save...
Irradiation experiments of positive and negative muon were conducted for 65-nm bulk CMOS static random-access memory. The experimental results reveal that parasitic bipolar action (PBA) contributes to muon-induced upsets. We observe an increase in single event upset (SEU) cross section at higher operation voltage under irradiation while shows opposite decreasing tendency. Also, the proportion multiple-cell (MCU) events all is up 66, more than a 20-bit MCU observed. Furthermore, Monte Carlo...
We have performed an irradiation test of low-energy positive and negative muons on 65-nm ultra-thin body thin buried oxide silicon-on-insulator static random access memories. The single event upset (SEU) cross sections were measured systematically as a function incident muon momentum operating supply voltage. experimental results show that the SEUs occur at about three times higher rate than ones voltage 0.5 V when stop near sensitive volume (SV). A Monte-Carlo simulation with particle heavy...
Negative and positive muon-induced single-event upset (SEU) rates were estimated for 65-nm bulk ultrathin body thin buried oxide silicon-on-insulator (UTBB-SOI) static random access memories (SRAMs). The SEU cross sections muon incidence on the two SRAMs experimentally characterized compared. experimental results showed that negative SRAM are significantly larger than those UTBB-SOI. Estimation of at ground level was performed using Monte Carlo simulation with Particle Heavy Ion Transport...
Multiple-cell upset (MCU) in static random access memory (SRAM) is a major concern radiation effects on very large scale integration (VLSI) since it can spoil error correcting codes (ECCs). Neutron-induced MCUs have been characterized for terrestrial environment. On the other hand, negative muon-induced MCUs, which are caused by secondary ions generated through muon capture process, were recently reported. Neutron- and both ions, hence, they expected to some similarity. In this paper, we...
The impact of the irradiation side on cross sections single-event upsets (SEUs) induced by neutrons was investigated performing neutron measurements and simulations. A test board equipped with 65-nm bulk 6-T CMOS static random access memories irradiated quasi-monoenergetic neutrons, number SEUs counted. obtained board-side approximately 20% to 30% smaller than that plastic package side. We also soft error rates (SERs) terrestrial energy spectrum via a Monte Carlo simulation. SER from twice...
Negative and positive muon irradiation tests of static random access memories (SRAMs) were performed at Muon Science Innovation Channel (MuSIC) Research Center for Nuclear Physics (RCNP), Osaka University. The muon-induced single event upset (SEU) cross sections 65-nm bulk SRAMs measured. SRAM device was irradiated by the beams with average momenta ranging from 37.8 to 41.0 MeV/c beam exit. incident fluence measured using a one-by-one detection system plastic scintillator taking advantage...
We have developed a novel discrimination methodology to identify ions in multispecies beams with similar charge-to-mass ratios, but different atomic numbers. After an initial separation by ratios using co-linear electric and magnetic fields, individual can be discriminated considering the linear energy transfer of irradiating stimulable phosphor plate (Fujifilm imaging plate) comparison Monte Carlo calculation. apply method energetic laser-driven ion use it silver produced interaction...
In this paper, we compare the negative and positive muon-induced SEU event cross sections of 28-nm 65-nm planar bulk CMOS SRAMs. Our measurement results show a 3.6 X increase in section from to technology, is 3.3 larger compared muons at technology. This result consistent with previous works reporting increases technology scaling. The measured also suggests contribution direct ionization total 54.1% node operating voltage 0.6 V while it 1.8% 0.9 V.
A neutron irradiation test of static random access memories (SRAMs) was performed using a spallation source at Materials and Life Science Experimental Facility (MLF) in the Japan Proton Accelerator Research Complex (J-PARC). The probability neutron-induced single-event upsets (SEUs) measured for 65-nm bulk silicon on thin buried oxide (SOTB) SRAMs under BL10 experimental facility. SEU data were compared with previous same which other facilities having different spectra. differences operating...
This paper proposes an interface for wearable computers using augmented reality (AR) environment which allows the user to handle virtual objects with his/her own hands intuitively. The proposed system is constructed a computer and head mounted display (HMD). A pair of cameras attached HMD positioned as eyes. Using stereo measurement, finger's postures are captured displayed together on video-see-though HMD. tracks fingertips motion index finger thumb so can pick up, move rotate object if...
Muon-induced single event upset (SEU) is predicted to increase with technology scaling. Although previous works investigated the dependencies of muon-induced SEU cross sections on energy, voltage, and technology, angle incidence terrestrial muons not always perpendicular chip surface. Consequently, impact SEUs should be evaluated. This study conducts negative muon irradiation tests bulk fully depleted silicon insulator static random access memories at two angles incidence: 0° (vertical) 45°...
The impacts of hydrided and non-hydrided materials near transistors on neutron-induced single event upsets (SEUs) were investigated by simulating monoenergetic neutron irradiations 65-nm technology bulk static random access memories. onset energy the SEUs induced H ions depends shielding capability, i.e., material thickness, components placed in front when those do not contain hydrogen atoms. capability also influences initial slope observed energy-dependence SEU cross sections. Taking into...
Main text Section III (neutron measurements) of the Comité Consultatif des Rayonnements Ionisants, CCRI, conducted a comparison primary measurements neutron emission rate 252 Cf radionuclide source. A single source was circulated to all participants between 2016 and 2020. Ten laboratories participated -CMI (Czech Republic), KRISS (Republic Korea), IRD/LNMRI (Brazil), LNE-LNHB (France), NIM (China), NIST (USA), NMIJ (Japan), NPL (UK), NRC (Canada) VNIIM (Russia) - with making their at start...
日本における中性子標準の研究は,1954年から原子力の平和利用のためにスタートした。現在,中性子標準が提供できる物理量としては,241Am-Be,252Cf中性子線源および加速器中性子を用いた中性子フルエンスおよび中性子フルエンス率と,241Am-Be,252Cf中性子線源に対する中性子放出率がある。これらの標準について,国内ユーザーに対する標準供給およびトレーサビリティ体制の構築を行ってきた。広まる中性子ニーズに対応するために,新たな中性子標準の確立とそのための新たな中性子計測技術開発の取り組みを行っている。本稿では,現在までの中性子標準と今後の中性子標準に関する取り組みを紹介する。
We have newly analyzed negative and positive muon-induced single-event upset (SEU) data in irradiation tests from the package side (PS) of 65-nm bulk static random-access memory (SRAM) compared with previous results board (BS). The peak SEU cross section is 28 MeV/c for PS irradiation, which differs 38 BS irradiation. magnitude approximately twice that both muons. Through simulations using Geant4, we explain difference quantitatively. This simulation also reproduces experimental sections...
Abstract A De-Pangher-type long counter was designed for neutron measurements in standard fields based on the results of simulations using MCNP6 code at National Metrology Institute Japan, Advanced Industrial Science and Technology. The effects six parameters design energy response were investigated. then quantitatively evaluated eight candidates selected from investigation. calculation show that these have a flatter 100 eV to 10 MeV compared current counter. These also reduce difference...
Abstract The National Metrology Institute of Japan plan to use an inner-through-type ionization chamber (IC) as a working standard calibrate radon monitors. Novel methods the IC were described, and calibration factor, CF [Bq m −3 A−1], with its expanded uncertainty (k = 2) was evaluated be (2.0 ± 0.2) × 1016 Bq m−3 A−1 in order 10−13 A output current. In this study, CFs, under sampling conditions between continuous gas flowing stationary filled inside IC, agreement within uncertainty.
Abstract When detecting fast and thermal neutrons in intense γ -ray fields, it is challenging to discriminate between pulse signals due neutron -rays, even when using pulse-shape-discrimination techniques, because the trailing overlap at high rates. Some nuclear facilities have faced problems for dispersed fuel (or debris), radioactive wastes, other materials during decommissioning. Particularly, high-efficiency detection fields required exploring criticality monitoring. LiCaAlF 6 (LiCAF):Ce...