A high-quality graphene transparent conductive film was fabricated by roll-to-roll chemical vapor deposition (CVD) synthesis on a suspended copper foil and subsequent transfer. While the high temperature required for CVD of has prevented efficient production thus far, we used selective Joule heating to achieve this. Low pressure thermal direct transfer process using photocurable epoxy resin allowed us fabricate 100-m-long with sheet resistance as low 150 Ω/sq, which is comparable that...

In order to examine the possibility of preparing a nonreacted (nonalloyed) Ohmic contact p-GaN, effects GaN surface treatments and work functions metals on electrical properties between metal contacts p-GaN were investigated. A contamination layer consisting GaOx adsorbed carbons was found substrate grown by metalorganic chemical vapor deposition. The not completely removed sputtering with Ar N ions where ion densities ∼10−2 μA/cm2. Although partially immersing in buffered HF solution,...

We measured the Schottky barrier heights and specific contact resistivities of four different metals on p-type GaN. The Pt, Ni, Au, Ti were obtained from current-voltage characteristics to be 0.50, 0.57, 0.65 eV, respectively. 0.013, 0.015, 0.026, 0.035 Ω⋅cm2, Our experimental results proved that decrease with increase in metal work function as expected theoretically.

High-quality Ga0.92In0.08N–GaN multiple quantum wells structures (MQW) were grown successfully by metalorganic vapor phase epitaxy. Fine multilayer with a thickness period of 7–9 nm detected secondary ion mass spectroscopy. The dislocation density in the MQW was found to be range 0.5–2×109 cm−2 transmission electron microscopy. extremely enhanced two orders magnitude, cathodoluminescence intensity compared bulk Ga0.91In0.09N.

A developed nanomechanical analysis of atomic force microscopy (AFM) based on the JKR theory has been applied to butyl rubber; isoprene-co-isobutylene rubber (IIR, rubber). The force–deformation (F–δ) plots converted from force–distance curves IIR varied with several experimental conditions, i.e., temperature, scan velocity and maximum loading force. We analyzed by referring 'two-points method' proposed Walker co-workers. It was found that apparent Young's modulus adhesive energy obtained...

Nanomechanical mapping by atomic force microscopy (AFM) has been developed as the useful application to measure physical properties of soft materials at nano-meter scale. To date, Hertz theory was used for analyzing force-distance curves simplest model contact mechanics between elastic bodies. However, preexisting methods based on do not consider adhesive interaction in principle, which cannot be neglected ambient condition. First, we introduce a new analysis estimate elasticity and energy...

It is demonstrated by shell-model calculations of $\mathit{sd}$-shell nuclei that the binding energies are dominated monopole part nucleon-nucleon interaction. The component, which comes mainly from two-body interaction in triplet-even channel, can be renormalized into one-body single-particle energies. also shown proton-neutron quadrupole causes a sizable gain energy coherent configuration mixing deformation.

In a magnetohydrodynamics (MHD) power generation with frozen inert gas plasma (FIP), the effect of nonuniformity inlet in direction perpendicular to walls on performance and comparison r-/spl theta/ two-dimensional (2-D) numerical simulations are examined r-z 2-D ones. The an ionization degree is kept throughout channel even boundary layer state FIP realized without instability. When near higher than that main flow, enthalpy extraction ratio decreases because strong MHD interaction wall...

Freestanding GaN wafers were produced by a newly developed self-separation method. Thick layers grown using hydride vapor phase epitaxy on sapphire substrate with seeds. The separation of the thick took place during growth sequence at interface GaN/sapphire, because thermal stress and lattice mismatch between sapphire. size freestanding was 23 mm × 22 mm. threading dislocation density top surface 106 cm—2 to ∼107 cm—2.

We used $p$-polarized multiple-angle incidence resolution spectrometry (pMAIRS) to investigate a collective orientation barrier (COB) in the growth of organic semiconductor (OSC) films. demonstrate temperature-dependent variation pentacene (PEN) on $\mathrm{Si}{\mathrm{O}}_{2}$ films as model system. The molecular varied from lying standing temperature increased. This change suggests that formation is thermally activated compared with state. nucleation standing-oriented islands occurs by...

Abstract The temperature-dependent molecular orientation variation of pentacene (PEN) on a graphene-covered substrate (PEN/Gr) was investigated via p-polarized multiple-angle incidence resolution spectrometry (pMAIRS). temperature regime the transition PEN/Gr different from that PEN/SiO 2 . collective barrier (COB), an energy molecules need to overcome form standing orientation, estimated pMAIRS. Consequently, COB found be 10 times larger than This indicated is valuable for understanding...

Coating a substrate with self-assembled monolayer (SAM) is known as an effective surface modification method for improving the quality of organic semiconductor films formed on it. However, there still lack comprehensive understanding regarding formation molecular orientation SAM surfaces. Highly ordered SAMs were prepared SiO2 substrates using octadecyltrichlorosilane (OTS). The temperature dependence pentacene OTS was investigated by p-polarized multiple-angle incidence resolution...

GaN-based multiple quantum well (MQW) laser diodes have been improved greatly by introducing GaN/GaInN optical-guiding layers and reducing the dislocation density. The lifetime of continuous-wave operation has to 700 hours at 3mW output power wavelength 408 nm.

A GaN blue light emitting diode (LED) and Si photodiodes (PDs) are integrated monolithically on substrate for a micro optical displacement encoder sensor. GaN-LED crystal layer was grown epitaxially substrate. pn-junction formed subsequently the by P ion implantation. Therefore, all components necessary sensor chip after patterning gratings. The is useful improving diffraction effect suitable photodetector.

GaN-based multiple quantum well (MQW) laser diodes have been improved greatly by introducing GaN/GaInN optical-guiding layers and reducing the dislocation density. The lifetime of continuous-wave operation has to 700 hours at 3mW output power wavelength 408 nm.

We investigated a hybrid thin film microstrip line with polyimide (1 μm)/CoZrNb μm)/polyimide μm) sandwich structure and (3 on the basis of electromagnetic field analysis, we evaluated their characteristics for fabricated device. Results showed that distributed inductance depends operating frequency, because frequency-dependent magnetic shielding bottom ground plane. In case line, is nearly constant, hence characteristic impedance also becomes constant in wide-band frequency range.