A5035602519- Quantum and electron transport phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Photonic Crystals and Applications
- Force Microscopy Techniques and Applications
- Advanced Memory and Neural Computing
- Atomic and Molecular Physics
- Fern and Epiphyte Biology
- Quantum-Dot Cellular Automata
- Fractal and DNA sequence analysis
- Laser-induced spectroscopy and plasma
- Nuclear Physics and Applications
- Computational Physics and Python Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Neural Networks and Reservoir Computing
- Gyrotron and Vacuum Electronics Research
- Neural Networks and Applications
- Photonic and Optical Devices
- Physical Unclonable Functions (PUFs) and Hardware Security
- Magnetic Field Sensors Techniques
UNSW Sydney
2024
University of Southampton
2018-2021
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The coupling produces complex hole-spin dynamics, providing opportunities further optimise qubits. Here, we demonstrate a singlet-triplet using hole states planar metal-oxide-semiconductor double dot. We rapid control with oscillations up 400 MHz. exhibits coherence, maximum dephasing time of 600 ns, which is enhanced 1.3 μs refocusing techniques. investigate magnetic...
Manipulation of carrier densities at the single electron level is inevitable in modern silicon based transistors to ensure reliable circuit operation with sufficiently low threshold-voltage variations. However, previous methods required statistical analysis identify devices which exhibit random telegraph signals (RTSs), caused by trapping and de-trapping a electron. Here, we show that can deliberately introduce an RTS nanowire transistor, its probability distribution perfectly controlled...
We show a manipulation of single electron at room temperature by controlling Random Telegraph Signals (RTSs) voltage pulses. Our silicon nanowire triple-gate transistor exhibited RTSs when potential barriers were electrically created two the three gates. From statistics signals, we optimised pulse such that was intentionally captured in well, and retention time approximately 10ms observed this memory operation. This study indicates effect can be controllable form defining well.
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on 300 mm integrated platform. Using DC transport measurements, investigate g-tensor and spin-relaxation induced leakage current within Pauli spin-blockade regime as function magnetic-field orientation at three different numbers. We find spin-leakage be highly anisotropic due light-hole/heavy-hole mixing spin-orbit mixing, but discover anisotropies...
While the importance of atomic-scale features in silicon-based device for quantum application has been recognized and even placement a single atom is now feasible, role dopant substrate not attracted much attention context technology. In this paper, we report random telegraph signals (RTSs) originated from trapping detrapping an electron by donor p-type metal–oxide–semiconductor field-effect-transistor. RTSs, seen when was grounded, were observed positive bias applied to substrate. The...
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The coupling produces complex hole-spin dynamics, providing opportunities further optimize qubits. Here, we demonstrate a singlet-triplet using hole states planar metal-oxide-semiconductor double dot. We observe rapid control with oscillations up 400 MHz. exhibits coherence, maximum dephasing time of 600 ns, which is enhanced 1.3 us refocusing techniques. investigate...
Abstract In this work, we experimentally investigate the impact of electrical stress on tunability single hole transport properties within a p-type silicon MOSFET at temperature T = 2 K. This is achieved by monitoring Coulomb-blockade from three disorder based quantum dots channel-oxide interface, which are known to lack as result their stochastic origin. Our findings indicate that when applying gate biases between −4 V and −4.6 V, nearby charge trapping enhances leading stronger dot...
Single hole transport and spin detection is achievable in standard p-type silicon transistors owing to the strong orbital quantization of disorder based quantum dots. Through use well acting as a pseudo-gate, we discover formation double-quantum dot system exhibiting Pauli spin-blockade investigate magnetic field dependence leakage current. This enables attributes that are key state control be determined, where calculate tunnel couplingtcof 57μeV short spin-orbit lengthlSOof 250 nm. The...
The need for hardware random number generators (HRNGs) that can be integrated in a silicon (Si) complementary-metal–oxide–semiconductor (CMOS) platform has become increasingly important the era of Internet-of-Things (IoT). Si MOSFETs exhibiting telegraph signals (RTSs) have been considered as such candidate HRNG, though its application hindered by RTS’s variability and uncontrollable, unpredictable characteristics. In this paper, we report generation randomness evaluation numbers from RTSs...
In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, can couple conventionally used transverse-electric (TE) polarized mode to transverse-magnetic (TM) polarization slot-mode. Finite difference time domain (FDTD) simulations indicate TE couples robust TM inside Brillouin zone. Broadband transmission data shows propagation identified with horizontal-slot within bandgap for fully mismatched...