A5066227196- Plasma Diagnostics and Applications
- Microfluidic and Capillary Electrophoresis Applications
- Metal and Thin Film Mechanics
- Surface Modification and Superhydrophobicity
- Innovative Microfluidic and Catalytic Techniques Innovation
- Semiconductor materials and devices
- Microfluidic and Bio-sensing Technologies
- Copper Interconnects and Reliability
- Advancements in Photolithography Techniques
- Plasma Applications and Diagnostics
- Fluid Dynamics and Heat Transfer
- Fluid Dynamics and Thin Films
- Ion-surface interactions and analysis
- Electrowetting and Microfluidic Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Biosensors and Analytical Detection
- Advanced Surface Polishing Techniques
- Nanofabrication and Lithography Techniques
- nanoparticles nucleation surface interactions
- Electrohydrodynamics and Fluid Dynamics
- Optical Coatings and Gratings
- Dust and Plasma Wave Phenomena
- Fluid Dynamics and Turbulent Flows
- Advanced biosensing and bioanalysis techniques
- Silicon Carbide Semiconductor Technologies
National Technical University of Athens
2014-2025
National Centre of Scientific Research "Demokritos"
2013-2023
Athens State University
2018
Foundation for Research and Technology Hellas
2015
National and Kapodistrian University of Athens
2000
We describe how plasma–wall interactions in etching plasmas lead to either random roughening/nanotexturing of polymeric and silicon surfaces, or formation organized nanostructures on such surfaces. conduct carefully designed experiments understand the causes both phenomena, present Monte Carlo simulation results confirming experiments. discuss emerging applications wetting optical property control, protein immobilisation, microfluidics lab-on-a-chip fabrication modification, cost-effective...
A global or zero-dimensional model for C4F8 plasmas is formulated by coupling gas phase and wall surface reaction kinetics. set of reactions implements experimental findings quantifies the effect fluorocarbon film formed on reactor walls densities species in phase. The allows calculation pressure change after ignition discharge effective sticking (surface loss) coefficients neutral surface. validated comparison with measurements, i.e. rise F atoms, CF2 CF radicals, an inductively coupled...
Gas phase and reactor wall-surface kinetics are coupled in a global model for SF6 plasmas. A complete set of gas surface reactions is formulated. The rate coefficients the electron impact based on pertinent cross section data from literature, which integrated over Druyvesteyn energy distribution function. adjustable parameters calculated by fitting to experimental an inductively plasma reactor, i.e. F atom density pressure change after ignition discharge. predicts that SF6, F, F2 SF4...
Quasi‐periodic nanostructures on a variety of materials have recently attracted tremendous attention due to their capability dramatically change the materials’ surface performance and enable applications. In reported studies, are nanostructured by “exotic” preparation strategies such as self‐assembly, cluster ion beams, femtosecond lasers, not necessarily providing rapid, large‐area, scalable fabrication based widespread technology. Herein, reactive plasma etching is proposed conventional...
Fabrication of periodic nanodot or nanocolumn arrays on surfaces is performed by top-down lithographic procedures bottom-up self-assembly methods, which both make use plasma etching to transfer the pattern. Could alone act as an assembly–organization method create pattern and then it substrate? We present data that support this idea propose a mechanism periodicity formation where simultaneous deposition take place.
A surface model is presented for the etching of silicon (Si) and dioxide (SiO2) in fluorocarbon plasmas. Etching deposition are accounted using a generalized concept “polymer coverage,” which found to be equivalent normalized film thickness covering etched surfaces. The coefficients obtained from fits available beam experimental data, while results successfully compared with high-density plasma data.
A combined simulator linking gas flux data from a plasma reactor (experimental or simulated) to the feature profile evolution during etching/deposition processes is described. This results coupling of surface etch, local calculation, and modules. It modular tool, in sense that different phenomena, models, structures can be incorporated. In this work applied two processes: (a) SiO2 etching simulate reactive ion (RIE) lag inverse RIE (b) high aspect ratio Si trenches using Bosch process. The...
The nanoroughness formation and evolution during fluorine-based plasma etching of Si surfaces is investigated both experimentally theoretically. Dual nanoscale morphology, as well as, almost linear increase root mean square roughness correlation length versus time observed in the experiment. effect etch inhibitors from environment modeled. Two kinds can explain predict evolution. Key factors angular distribution that ions their sticking probability compared to reactive neutral species.
A method that computes minimum energy paths (MEPs) of wetting transitions is developed. The couples the Cahn–Hilliard formulation a modified phase-field with simplified string method. Its main computational kernel fast Fourier transform efficiently performed on graphics processing units. effectiveness proposed demonstrated two types droplets grooved surfaces. first transition from Cassie–Baxter state to Wenzel state, where it shown progresses in sequential manner droplet each groove...
Rapid and sustained condensate droplet departure from a surface is key toward achieving high heat-transfer rates in condensation, physical process critical to broad range of industrial societal applications. Despite the progress enhancing condensation heat transfer through inducing its dropwise mode with hydrophobic materials, sophisticated engineering methods that can lead further enhancement are still highly desirable. Here, by employing three-dimensional, multiphase computational...
Abstract Etching of PDMS in SF 6 plasmas is investigated as planar technology for the fabrication microfluidic devices with simultaneous control surface topography and wettability. Plasma conditions were optimized high etch rate, which was achieved at plasma powers bias voltages, where microstructures exhibited good anisotropy. Depending on etcher wall mask material, can be controlled from very rough to almost smooth. Independent by treating surfaces wet etchants. Open microchannels...
The charging on unconventional, rough, surface morphologies of polymeric substrates is investigated. case study Ar plasma etching PMMA surfaces with sinusoidal profiles resembling rough profiles. A modeling framework for the description "wetted" two-dimensional (2d) developed. It consists models calculation ion and electron trajectories, local charge density, potential induced by charge, a model. latter devised combining experimental measurements calculations TRIM code. Etching rate without...